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  • 1
    Electronic Resource
    Electronic Resource
    Epitaxial ferromagnetic MnAs thin films grown on Si (001): The effect of substrate annealing : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 4957-4959 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied two different types of epitaxial ferromagnetic MnAs thin films on Si (001) substrates grown by molecular beam epitaxy. When the Si substrates were annealed at a relatively high temperature (∼900 °C) and then MnAs was grown, we obtained epitaxial MnAs films with twofold crystal symmetry (type I). In contrast, when the thermal cleaning of the Si substrate was done at a lower temperature (∼600 °C), epitaxial MnAs thin films had fourfold crystal symmetry (type II). The growth plane in both types of MnAs thin films was the (1¯101) of the hexagonal MnAs. The type I MnAs films are single domain with strong magnetic anisotropy, whereas the type II MnAs films are double domain with the lack of strong magnetic anisotropy. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361602
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  • 2
    Electronic Resource
    Electronic Resource
    Epitaxial CoAl/AlAs/GaAs metal semiconductor heterostructures: Growth, structure, and electrical properties (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 885-896 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Molecular beam epitaxial (MBE) growth, structural, and electrical properties of novel epitaxial metal/semiconductor heterostructures (MSHs), consisting of monocrystalline CoAl, an intermetallic compound, and AlAs/GaAs III-V semiconductors have been studied. The CoAl with stoichiometric composition has a CsCl-type crystal structure whose lattice constant is very close to half the lattice constant of GaAs and AlAs, hence, it is a good candidate as a constituent metal in epitaxial monocrystalline metal/semiconductor heterostructures. MBE growth of CoAl thin films on AlAs/GaAs, and also semiconductor overgrowth on ultrathin CoAl films, together with structural characterizations by in situ reflection high energy electron diffractions, ex situ x-ray diffractions and cross sectional transmission electron microscopy have been explored. By optimizing the growth parameters and procedures, high quality monocrystalline CoAl/AlAs/GaAs heterostructures with atomically abrupt interfaces have been successfully grown. Furthermore, the electrical properties of such novel heterostructures as Schottky barrier heights of CoAl/AlAs/GaAs MSHs and transport properties in ultrathin buried CoAl films are described.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356443
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  • 3
    Electronic Resource
    Electronic Resource
    Magnetic and magnetotransport properties of new III-V diluted magnetic semiconductors: GaMnAs : The 41st annual conference on magnetism and magnetic materials (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 4865-4867 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied magnetic and magnetotransport properties of novel III-V diluted magnetic semiconductors, (Ga1−xMnx)As. The GaMnAs thin films were grown on GaAs(001) substrates by low temperature molecular beam epitaxy. We present magnetoresistance, extraordinary Hall effect, and M–H characteristics of two (Ga1−xMnx)As samples having different Mn content x. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364859
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  • 4
    Electronic Resource
    Electronic Resource
    Defect formation in the solid phase epitaxial growth of GaAs films on Si (001) substrate (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 237-242 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The defect structures of GaAs film on (001) Si substrate tilted ∼3° towards the [110] direction were investigated by the high-resolution transmission electron microscopy. GaAs films were grown by the molecular beam epitaxy (MBE) on the Si (001) substrate by a modified two-step process, in which amorphous GaAs buffer layers were grown first. High-resolution electron micrographs show that stacking faults (and/or microtwins) are preferentially formed on the tilted step-rich surface, whereas misfit dislocations are preferentially formed on the flat surface. However, the difference in the defect density on the two cross sections is small. Between the observed 90° edge and 60° misfit dislocations the density of the latter is higher irrespective of the substrate tilt. This occurrence is explained by the difference in distribution of initial nucleating islands between the present and the conventional two-step MBE techniques.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347756
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  • 5
    Electronic Resource
    Electronic Resource
    Solid phase epitaxial growth of GaAs on Si substrates (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 448-450 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of GaAs on Si were grown by molecular beam epitaxy, which involves the solid phase epitaxial (SPE) growth of the amorphous GaAs buffer layer. A Rutherford backscattering minimum channeling yield of ∼9.4% has been obtained for a 0.8-μm-thick GaAs film. Cross-sectional transmission electron micrographs and reflection high-energy electron diffraction results have revealed that misfit dislocations are mostly confined to what used to be the buffer layer of ∼300 nm in thickness, and that the microtwins (and/or stacking faults) are mostly originated from the GaAs/Si interface and are generated during SPE growth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102761
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  • 6
    Electronic Resource
    Electronic Resource
    Hall effect and magnetic properties of III–V based (Ga1−xMnx)As/AlAs magnetic semiconductor superlattices : The 7th joint MMM-intermag conference on magnetism and magnetic materials (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 6551-6553 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present magnetotransport properties, with emphasis on Hall effect, of a new class of III–V based magnetic (GaMnAs)/nonmagnetic (AlAs) semiconductor superlattices (SLs) grown by low-temperature molecular beam epitaxy. The SLs having relatively wide (GaMn)As layers (≥70 Å) are ferromagnetic at low temperatures, and their hole concentrations and Curie temperatures are estimated through the analysis of Hall measurements. The dependence of the magnetic and transport properties on the GaMnAs well width is discussed. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367577
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  • 7
    Electronic Resource
    Electronic Resource
    Room-temperature negative differential resistance in AlAs/ErAs/AlAs heterostructures grown on (001)GaAs (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 84-86 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated resonant tunneling structures having a buried ErAs semimetallic quantum well and AlAs double barriers, on (001)GaAs substrates. In order to suppress the three-dimensional island growth of GaAs and AlAs on ErAs and to obtain flat interfaces, we adopted a template approach, in which one monolayer of Mn was deposited on ErAs prior to the growth of AlAs, in molecular beam epitaxy. In the current–voltage characteristics at room temperature, negative differential resistance was clearly observed in a significant number of diodes with the ErAs thickness ranging from 2.6 to 5.0 nm. This room-temperature device operation on (001) substrates is, we believe, an important step towards the realization of semimetal/semiconductor hybrid quantum devices. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116766
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  • 8
    Electronic Resource
    Electronic Resource
    Epitaxial MnAs/GaAs/MnAs trilayer magnetic heterostructures (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 64-66 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have successfully grown MnAs/GaAs/MnAs ferromagnet/semiconductor trilayer heterostructures on GaAs(111)B substrates by molecular beam epitaxy. The epitaxial orientations of MnAs and GaAs are (0001) and (111), respectively, as expected. It was found that epitaxial monocrystalline GaAs can be grown on the As-rich (3×2)-(0001) MnAs surface. Cross-sectional images by transmission electron microscopy showed that the trilayers are formed as intended with fairly smooth and atomically abrupt interfaces. Double-step features were observed in magnetization characteristics due to the difference in coercive force between the top and bottom MnAs layers. The interlayer coupling was small when the thickness of the GaAs spacer layer was 5–10 nm. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122953
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  • 9
    Electronic Resource
    Electronic Resource
    Molecular beam epitaxial growth and characterization of CoAl on AlAs/GaAs (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 3115-3117 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We study molecular beam epitaxial growth and structural properties of intermetallic compound CoAl on AlAs/GaAs III-V semiconductors. CoAl has a CsCl structure whose lattice constant is nearly half the lattice constant of GaAs and AlAs, hence, it is a good candidate for the constituent material in epitaxial metal/semiconductor heterostructures. We investigate the dependence of crystallinity of Co1−xAlx epitaxial layers on Al composition x and on growth temperature Ts, by in situ reflection high-energy electron diffraction and ex situ x-ray measurements. It is found that the single-crystalline CoAl with high quality can be obtained at x=0.5 and Ts=350 °C. Under appropriate growth procedures and conditions, the epitaxial growth orientation is (001)[110]CoAl on (001)[110]AlAs/GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105756
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  • 10
    Electronic Resource
    Electronic Resource
    Epitaxial ferromagnetic MnAs thin films grown by molecular beam epitaxy on Si (001) substrates (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3349-3351 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have grown ferromagnetic MnAs thin films on Si(001) substrates by molecular beam epitaxy. Epitaxial monocrystalline MnAs films with the growth plane of (1¯101) were obtained when the Si surface was first exposed to an As4 flux and then Mn and As4 fluxes were codeposited. It was found that the very first monolayer of As on Si(001) plays an essential role to obtain epitaxial MnAs thin films. Magnetization measurements indicate that the easy axis of the MnAs thin films is in-plane, along the [1¯1¯20] of MnAs and the [110] of Si, normal to the substrate misorientation. The M-H curve of a 300-nm-thick film shows a hysteresis with a saturation magnetization Ms of 694 emu/cm3 and a coercive field Hc of 94 Oe, when the magnetic field is applied along the easy axis. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115243
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