ISSN:
1662-9779
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Physics
Notes:
Transformations of the SiGe/Si superlattice structures, either annealed at high pressure,or irradiated by high energy ions and subjected to post-implantation annealing, were studied andcompared. Both types of treatments were found to lead to the formation of recharged defectsclusters, resulting in the appearance of peaks on C-V characteristics, shrinkage of Ge profilesregistered by SIMS technique after annealing, and disappearance of peaks in the free carrierprofiles. The effects were more pronounced in the case of high energy ion implantation. Theresults are explained by the vacancy - assisted precipitation of Ge in SiGe layers
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/22/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.114.291.pdf
Permalink