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  • 1
    Electronic Resource
    Electronic Resource
    Threading dislocations in silicon layer produced by separation by implanted oxygen process (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 2113-2120 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Threading dislocations in the silicon layer in three different types of the silicon on insulator samples produced by standard and improved separation by implanted oxygen (SIMOX) processes were investigated by synchrotron x-ray topography, scanning electron microscopy (SEM), and optical microscopy. The densities and Burgers vectors of the dislocations were first determined nondestructively by synchrotron x-ray topography. Then the line directions of the same dislocations were determined by SEM after chemical Secco etching. Some of these results were compared with results obtained from optical microscopy of Secco etched samples. The threading dislocations in the Si layer were found to occur mainly in pairs with densities of the order of 105 cm−2 in standard SIMOX samples and of the order of 104 cm−2 in improved SIMOX samples. These dislocations have an edge character. Other features of these dislocations, such as the distances between two dislocations forming a pair, orientations of these pairs, and dislocations that change their line direction, are also discussed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363104
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  • 2
    Electronic Resource
    Electronic Resource
    X-ray Moiré Topography on SIMOX Structures (1996)
    Copenhagen : International Union of Crystallography (IUCr)
    Applied crystallography online 29 (1996), S. 568-573 
    Details
    ISSN: 1600-5767
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0021889896006401
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  • 3
    Electronic Resource
    Electronic Resource
    X-ray topographic determination of the granular structure in a graphite mosaic crystal: a three-dimensional reconstruction (2000)
    Copenhagen : International Union of Crystallography (IUCr)
    Applied crystallography online 33 (2000), S. 1023-1030 
    Details
    ISSN: 1600-5767
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: Section topographs recorded at different spatial locations and at different rocking angles of a highly oriented pyrolytic graphite (HOPG) crystal allow three-dimensional maps of the local angular-dependent scattering power to be obtained. This is performed with a direct reconstruction from the intensity distribution on such topographs. The maps allow the extraction of information on local structural parameters such as size, form and internal mosaic spread of crystalline domains. This data analysis leads to a new method for the characterization of mosaic crystals. Perspectives and limits of applicability of this method are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0021889800005975
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  • 4
    Electronic Resource
    Electronic Resource
    X-ray diffraction moiré topography as a means to reconstruct relative displacement fields in weakly deformed bicrystals (1999)
    [S.l.] : International Union of Crystallography (IUCr)
    Acta crystallographica 55 (1999), S. 423-432 
    Details
    ISSN: 1600-5724
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Notes: X-ray diffraction topographs of wafers produced by separation by implanted oxygen (SIMOX) show moiré fringes in both reflection and transmission geometry. These fringes reveal deformations of the order of 10−6 to 10−8 between the layer and the substrate of the SIMOX material. A new method for a quantitative analysis of moiré fringes is developed and allows reconstruction with a high sensitivity of the three components of the relative displacement field between layer and substrate directly from a set of topographs. This method is used for the interpretation of moiré topographs of entire 4 in SIMOX wafers and of regions around crystal defects. Finally, the capabilities of an analysis of moiré fringes are compared with those of the usual diffraction topography.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0108767398010794
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  • 5
    Electronic Resource
    Electronic Resource
    Moiré Fringes and/or Translation-Fault Fringes? (1997)
    [S.l.] : International Union of Crystallography (IUCr)
    Acta crystallographica 53 (1997), S. 199-201 
    Details
    ISSN: 1600-5724
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Notes: Interference fringes on transmission topographs of crystals with an implanted amorphous layer are, among others, attributed to the moiré or the translation-fault effect. This discussion is reconsidered in the frame of the theory of a perfect bicrystal extended to a deformed one. It is shown that translation-fault fringes have the same properties as moiré fringes and that it is not necessary to introduce translation-fault fringes as a new diffraction phenomenon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0108767396013438
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  • 6
    Electronic Resource
    Electronic Resource
    A conical slit for three-dimensional XRD mapping (2000)
    Chester : International Union of Crystallography (IUCr)
    Journal of synchrotron radiation 7 (2000), S. 103-109 
    Details
    ISSN: 1600-5775
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: Traditionally, depth resolution in diffraction experiments is obtained by inserting pinholes in both the incoming and diffracted beam. For materials science investigations of local strain and texture properties this leads to very slow data-acquisition rates, especially when characterization is performed on the level of the individual grains. To circumvent this problem a conical slit has been manufactured by wire-electrodischarge machining. The conical slit has six 25 µm-thick conically shaped openings matching six of the Debye–Scherrer cones from a face-centred-cubic powder. By combining the slit with a microfocused incoming beam of hard X-rays, an embedded gauge volume is defined. Using a two-dimensional detector, fast and complete information can be obtained regarding the texture and strain properties of the material within this particular gauge volume. The average machining and assemblage errors of the conical slit are found both to be of the order of 5 µm. An algorithm for alignment of the slit is established, and the potential of the technique is illustrated with an example of grain mapping in a 4.5 mm-thick Cu sample.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0909049500000625
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  • 7
    Electronic Resource
    Electronic Resource
    Reduction of elastic strains in directly-bonded silicon structures (1999)
    Springer
    Physics of the solid state 41 (1999), S. 1790-1798 
    Details
    ISSN: 1063-7834
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The elastically strained state of the interface in directly-bonded silicon structures has been studied by x-ray diffraction topography and IR spectrometry. The pattern of the contrast observed in the x-ray topographs and the intensity oscillations in the IR spectra indicate a periodic strain distribution caused by the long-period surface microroughness on the plates to be bonded. The local microroughness did not exceed 2 Å, and it did not noticeably affect the interface structure. Two types of the structure were subjected to a comparative analysis, (i) with a smooth interface prepared by standard direct-bonding technology, and (ii) with an interface displaying a regular relief. The strain level in type-II structures was found to be lower by more than an order of magnitude. A model is proposed to account for the observed reduction of elastic strains at the bonded sections of the interface in terms of elastic relaxation of the free surfaces in the relief voids through their deflection and displacement.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1131099
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  • 8
    Electronic Resource
    Electronic Resource
    TRANSTEC – A new tool for online educational multimedia training on innovative high aspect ratio microtechnologies (2000)
    Springer
    Microsystem technologies 6 (2000), S. 109-112 
    Details
    ISSN: 1432-1858
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Technology
    Notes: Abstract Microtechnology is regarded as one of the key technologies of the 21st century that will decisively influence nearly all fields of daily life. The demand for vocational education in this discipline is growing rapidly. This education must be a continuous life long learning process since microtechnology is characterised by frequent improvements of the fabrication processes and facilities. The use of Internet-resources offers new chances in teaching and training, especially for design, production or application of products from high aspect ratio micro-engineering technologies. The present paper reports on the development of a novel concept of interactive Internet-based training entities in the field of High Aspect Ratio Technologies. The training topics are dedicated towards innovative engineering technologies, particularly the LIGA technique, laser-based microtechnologies and microengineering related aspects of precision engineering. This training is addressed to graduate students, design engineers and executives mainly in small and medium sized enterprises. http://www-ttec.rs.uni-siegen.de
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s005420050009
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