ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
The charge generated in 6H-SiC n+p diodes by oxygen (O) ion irradiation at energiesbetween 6 and 15 MeV was evaluated using the Transient Ion Beam Induced Current (TIBIC). Thesignal peak of the transient current increases, and the fall-time decreases with increasing appliedreverse bias. The value of collected charge increases with increasing applied reverse bias, and thesaturation of the collected charge was observed in high reverse bias regions (e.g. above 70 V in thecase of 12MeV O-irradiation). The charge generated in the deeper region than the depletion layer iscollected due to the "funneling effect". Almost all charge generated in n+p SiC diodes by O-irradiationbetween 6 and 15 MeV is collected when the length of the depletion layer becomes longer than theprojection range of ions
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/14/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.1347.pdf
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