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  • 1
    Electronic Resource
    Electronic Resource
    Growth modes of ZnSe on GaAs (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 1164-1166 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Growth modes of coherently strained ZnSe on GaAs are investigated as a function of the surface preparation and temperature. We find that the flattest and most uniform layers are grown at low temperatures, ∼300 °C, on surfaces exposed to high-temperature Se treatment. Nucleation rate depends on the surface coverage of Ga2Se3. High-temperature exposure of Ga-rich, (001)-oriented, GaAs to Se reduces the thickness required for the transition to a two-dimensional growth mode. The surface roughness increases with temperature as a result of three-dimensional island growth. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362709
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  • 2
    Electronic Resource
    Electronic Resource
    Electro-optic properties of oxide ferroelectrics grown on GaN/sapphire (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 1701-1703 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Recent advances in the processing of complex oxide materials have allowed us to monolithically grow ferroelectrics, of the lead lanthanum zirconate titanate system, on a GaN/sapphire structure. The thickness of these ferroelectric films ranged from 0.5 to 5 μm. Strong electrooptic effect with field-induced birefringence, as large as 0.02, was measured for (Pb,La)(Zr,Ti)O3 layer grown on a GaN/sapphire structure. The applicability of the lead lanthanum zirconate titanate material as a light modulating medium, integrated with GaN-based devices, was further proven by demonstrating optical modulation of a laser beam in an Al/(Pb,La)(Zr,Ti)O3/GaN/sapphire structure. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.373880
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  • 3
    Electronic Resource
    Electronic Resource
    Free-standing films of PbSc0.5Ta0.5O3 for uncooled infrared detectors (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 365-367 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Highly textured PbSc0.5Ta0.5O3 (PST) films were grown on (111) Pt/Si by the sol–gel technique. The PST films were subsequently lifted off the silicon substrate using reactive ion etching. A 40%–50% increase in dielectric constant and pyroelectric coefficient was observed for suspended films compared to those properties of the PST films on a Si substrate. Typical values of the pyroelectric coefficient were measured to be 20–45 nC/(cm2 K) for 200–300 nm thick PST films. The loss tangent values were below 0.02 (at 10 kHz), and the leakage current density was as low as 2–3×10−8 A/cm2 at 1 V bias. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1339257
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  • 4
    Electronic Resource
    Electronic Resource
    Pyroelectric properties of AlN (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 3075-3077 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pyroelectric properties of high-quality (0001)AlN films grown on (111) Si were studied. The pyroelectric coefficient p was measured using the dynamic method. The value was in the range of 6–8 μC/(m2 K), yielding a p/cursive-epsilon figure-of-merit of 0.8–0.95. The pyroelectric coefficient was independent of temperature and applied bias. Leakage current as low as 1–2×10−9 A/cm2 was measured at 5 V on large area devices. The obtained results indicate that AlN films can be used in pyroelectric thin-film devices. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1324726
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  • 5
    Electronic Resource
    Electronic Resource
    Electron transport in AlGaN–GaN heterostructures grown on 6H–SiC substrates (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 707-709 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigated two-dimensional electron transport in doped AlGaN–GaN heterostructures (with the electron sheet concentration ns(approximate)1013 cm−2) grown on conducting 6H–SiC substrates in the temperature range T=0.3–300 K. The electron mobility in AlGaN–GaN heterostructures grown on SiC was higher than in those on sapphire substrates, especially at cryogenic temperatures. The highest measured Hall mobility at room temperature was μH=2019 cm2/V s. At low temperatures, the electron mobility increased approximately five times and saturated below 10 K at μH=10250 cm2/V s. The experimental results are compared with the electron mobility calculations accounting for various electron scattering mechanisms. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120852
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  • 6
    Electronic Resource
    Electronic Resource
    Piezoeffect and gate current in AlGaN/GaN high electron mobility transistors (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 3673-3675 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on a high positive turn-on voltage (close to 2.5 V) of the gate-source leakage current in AlGaN/GaN high electron mobility transistors (HEMTs). The piezoeffect, the barrier, and channel doping result in the electron sheet concentration as high as 1013 cm−2. A larger conduction band discontinuity and a larger electron effective mass (compared to AlGaAs/GaAs HEMTs) lead to a lower gate current and to a higher turn-on voltage. This means that AlGaN/GaN technology can be suitable for applications in digital and mixed-mode integrated circuits. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120477
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  • 7
    Electronic Resource
    Electronic Resource
    High quality GaN–InGaN heterostructures grown on (111) silicon substrates (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3566-3568 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the low pressure metal organic chemical vapor deposition of single crystal, wurtzitic layers of GaN and GaN/InGaN heterostructures on (111) GaAs/Si composite substrates. The structural, optical, and electrical properties of the epitaxial layers are evaluated using x-ray diffraction, transmission electron microscopy, photoluminescence, and measurements of minority carrier diffusion length. These measurements demonstrate high quality of GaN grown on the composite substrate. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117247
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  • 8
    Electronic Resource
    Electronic Resource
    Visible-blind GaN Schottky barrier detectors grown on Si(111) (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 551-553 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report novel GaN detectors grown by molecular beam epitaxy on Si(111) substrates. Wurtzite structure epitaxial GaN exhibits room-temperature photoluminescence with a band-edge-related emission width as narrow as 7 nm and intensities comparable to high quality layers grown on sapphire by metalorganic chemical vapor deposition. Spectral response of lateral geometry Schottky detectors shows a sharp cutoff at 365 nm with peak responsivities of ∼0.05 A/W at 0 V, and ∼0.1 A/W with a −4 V bias. The dark current is ∼60 nA at −2 V bias. The noise equivalent power is estimated to be 3.7×10−9 W over the response bandwidth of 2.2 MHz. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120755
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  • 9
    Electronic Resource
    Electronic Resource
    Novel wet chemical etch for nanostructures based on II-VI compounds (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 509-511 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A simple wet chemical etch which produces stable and oxide-free surfaces of ZnSe is described. The etchant, a low pH solution of H2SO4:H2O2:H2O, reacts with ZnSe producing an amorphous layer of Se which grows into the semiconductor. The Se layer is then dissolved in aqueous (NH4)2S resulting in a S-passivated surface. The S-passivated layer is volatile and can be desorbed by heating the sample to 300 °C. The efficacy of this process is demonstrated by the formation of 20 nm wide quantum wires of CdZnSe/ZnSe with good optical properties. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119593
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  • 10
    Electronic Resource
    Electronic Resource
    Cleaved cavity optically pumped InGaN–GaN laser grown on spinel substrates (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2418-2420 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report an optically pumped multiple-quantum-well laser of InGaN–GaN grown on cubic, (111)-oriented spinel substrates. The laser cavity is formed by cleaving. Atomic force microscopy shows that the cleaved GaN and spinel facets are of similar flatness. The onset of lasing is clearly demonstrated by the saturation of spontaneous emission, abrupt line narrowing, and the highly polarized light output. A lasing threshold power of 140 kW/cm2 is measured in a 400-μm-long cavity at 150 K. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117656
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