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  • 1
    Electronic Resource
    Electronic Resource
    Temperature and time dependence of B and P diffusion in Si during surface oxidation (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 4327-4329 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Diffusion of B and P in silicon during surface oxidation in dry O2 has been measured as a function of time and temperature. The diffusion coefficients were measured for oxidations at 900, 1000, and 1100 °C for times ranging from 5 min to 4 h. For a 30-min oxidation at 900 °C, the measured P diffusion was 15 times greater than diffusion in an inert ambient. The diffusion enhancements for B and P decreased as the temperature was increased. Increasing oxidation times at a given temperature resulted in a decrease in the diffusion enhancement. The time and temperature dependence of the interstitial component of B and P diffusion are analyzed. By using P diffusion as an interstitial monitor, the fraction of boron diffusion which occurs through the interstitial mechanism is calculated to be 0.8 at 1100 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346204
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Transient diffusion of low-concentration B in Si due to 29Si implantation damage (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1787-1789 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of implantation damage on B diffusion are analyzed through the use of 29Si implants. Implant doses of 29Si ranging from 1×1012/cm2 to 1×1014/cm2 were used to create controlled amounts of damage. Temperatures ranging from 800 to 1000 °C were used to anneal the implant damage. For all anneal temperatures, the peak B concentration was well below the intrinsic electron concentration. Even for 29Si doses as low as 1×1012/cm2 significantly enhanced B diffusion was observed. The largest enhancement in B diffusion was observed for the highest 29Si implant dose and lowest anneal temperature. The kinetics of damage annealing determine the transient enhancement in the B profile. These results have important implications for the formation of shallow junctions using ion implantation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103100
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Doping and damage dose dependence of implant induced transient enhanced diffusion below the amorphization threshold (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1242-1244 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Special test structures were used to isolate the dependence of transient enhanced diffusion on damage dose and on doping concentration. The structures consisted of 200 nm boron-doped layers with an undoped silicon capping layer 300 nm thick. The boron concentrations varied from 5×1016 to 5×1018/cm3. Damage was introduced by 75 keV, Si implants with doses ranging from 1×1012 to 5×1013/cm2. Annealing at 750 °C for 120 min produced a large enhancement in the boron diffusivity. The enhancement increased with increasing Si dose, but in a sublinear manner. The enhancement decreased with increasing boron doping concentration, even for doping concentrations below the intrinsic electron concentration. A phenomenological defect-doping reaction model is described which predicts both of these essential features of damage enhanced diffusion. We conclude that it will be necessary to treat the full coupling between defects and dopant atoms in order to model damage enhanced diffusion effects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110852
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  • 4
    Electronic Resource
    Electronic Resource
    Emitter-base breakdown: Measurement and simulation
    Amsterdam : Elsevier
    Microelectronic Engineering 19 (1992), S. 695-698 
    Details
    ISSN: 0167-9317
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Electrical Engineering, Measurement and Control Technology
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0167-9317(92)90524-U
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