Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Si induced size effects in ferroelectric PbTiO3 (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 462-466 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Physical properties of PbTiO3 in the presence of Si are investigated in detail. Polycrystalline bulk samples with nominal composition of (Pb1−xSix) (Ti1−xSix)O3, where x varies from 0.01 to 0.25, are synthesized using the coprecipitation route. The presence of Si in the matrix leads to a reduction in coherently diffracting domain size (dXRD). The observed reduction in the ferroelectric distortion in the lattice c/a, ferroelectric transition temperature Tc and shift in Raman lines of PbTiO3 with increase in Si content are attributed to the Si induced finite size effect. However, at higher calcination temperatures, the material exhibits properties similar to pure, undoped, bulk PbTiO3. There is no evidence of change in crystal structure and ferroelectric nature of PbTiO3 due to the presence of Si. Our data suggests that Si, which is diffused out of PbTiO3 perovskite lattice, is likely to reside in the grain boundary region in an as yet unidentified chemical form. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371884
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    c-axis oriented ferroelectric thin films of Si-substituted PbTiO3 on Si(100) by pulsed laser deposition: Boost for nonvolatile memory application (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1179-1181 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It has been demonstrated that Si substitution in a PbTiO3 target helps to avoid the formation of a pyrochlore phase, which otherwise occurs during fabrication of the films directly on Si(100) by the pulsed laser deposition technique. The films are perfectly c-axis oriented. Moreover, the ferroelectric properties of PbTiO3 are not affected by Si substitution. As silicon helps the realization of the films at low substrate temperature, the Pb/Ti ratio is maintained close to 1 and the loss factor tan δ in the range of 0.02–0.05. Thus, the integration of nonvolatile ferroelectric random access memory on semiconductors is shown to be possible in a reliable, cost effective, and simple manner. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121006
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Dielectric properties of oriented thin films of PbZrO3 on Si produced by pulsed laser ablation (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 7808-7812 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: PbZrO3 is an antiferroelectric perovskite with TC(approximate)230 °C. We have deposited single phase, perfectly c-axis oriented thin films of PbZrO3 on Si(100) substrates by pulsed laser ablation at 700 °C. The growth conditions (substrate temperature, ambient oxygen pressure, and laser energy density) have been optimized and the morphology of the films studied by scanning electron microscopy and atomic force microscopy. From a study of the dielectric hysteresis of the films and a measurement of the temperature dependence of their capacitance, we find that films thicker than (approximate)300 nm are antiferroelectric, while thinner films (〈300 nm) appear to exhibit ferroelectric behavior. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367955
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    c-axis oriented ferroelectric thin films of PbTiO3 on Si by pulsed laser ablation (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1582-1584 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have deposited single phase c-axis oriented ferroelectric thin films of PbTiO3 on Si(100) by pulsed laser ablation technique in situ. It has been shown that the formation of a nonferroelectric, Pb2Ti2O6 pyrochlore phase at the interface could be avoided by raising the substrate temperature. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116687
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    PbTiO3 thin films on Si(100) as potential varistor material (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 3637-3639 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have shown that the aqueous sol derived thin films of PbTiO3 on Si(100) substrate exhibit strong varistor type of behavior for certain annealing conditions. Current–voltage (I–V) characteristics depend upon the processing conditions. The behavior is explained by grain boundary limited conduction model. Since the resistance of the grain boundaries varies with the processing conditions, grain boundaries in all samples do not act as potential barriers to the charge carriers. The film postannealed at 700 °C, possessing high nonlinear coefficient (α) with low breakdown voltage per barrier (Egbl), could be used as a protection device in current-sensitive electronic equipment. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120465
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Ferroelectricity in a pure BiFeO3 ceramic (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2764-2766 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The difficulties in synthesizing phase pure BiFeO3 are well known. In this letter we are reporting the optimized synthesis conditions for obtaining phase pure BiFeO3 ceramic. The oxide mixing technique followed by leaching with dilute nitric acid has been used for the synthesis. X-ray diffraction pattern indicated that the sample is phase pure. Scanning electron microscopy along with energy dispersive x-ray fluorescence analysis confirmed the chemical homogeneity of the sample. No segregation of the impurity phase in the matrix was detected. Moreover, Bi/Fe atomic ratio is observed to be ∼1. The ferroelectric transition of the sample at 836 °C has been detected by differential thermal analysis. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126468
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Observation of saturated polarization and dielectric anomaly in magnetoelectric BiFeO3 thin films (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 1628-1630 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report here synthesis of phase-pure magnetoelectric BiFeO3 thin films with controlled oxygen stoichiometry on Pt/TiO2/SiO2/Si substrate using pulsed-laser deposition technique. Saturated ferroelectric hysteresis loop has been observed in phase-pure and highly resistive BiFeO3 thin films. The dielectric response study of the films with temperature indicates an anomaly in dielectric constant ε(T), in the vicinity of Néel temperature (∼380 °C). This anomaly in ε(T) is explained as an influence of vanishing magnetic ordering on electric ordering of magnetoelectric BiFeO3 sample. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1458695
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Patent omphalomesenteric duct of the vermiform appendix in a neonate: congenital appendicoumbilical fistula (1998)
    Springer
    Pediatric surgery international 14 (1998), S. 229-230 
    Details
    ISSN: 1437-9813
    Keywords: Key words Patent omphalo- mesenteric duct ; Vermiform appendix ; Appendico-umbilical fistula
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Abstract Umbilical anomalies arise from fetal structures such as the omphalomesenteric duct (OMD) or urachus or from failure of closure of the umbilical fascial ring. Persistence of the OMD may lead to several anomalies including umbilical sinus, umbilical cyst, Meckel's diverticulum, or patent OMD (POMD). A POMD is usually associated with the ileum, but rarely may be with the caecum or appendix. We describe a POMD of the vermiform appendix and discuss the possible pathogenesis and management.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s003830050496
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Suppression of superconductivity in submicron La1.85Sr0.15CuO4−δ (1993)
    Springer
    The European physical journal 26 (1993), S. 234-236 
    Details
    ISSN: 1434-6079
    Keywords: 74.70.Mq ; 81.35.+k
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Bulk La1.85Sr0.15CuO4−δ (LSCO) superconducts below 36K. But microcrystalline LSCO with mean particle size ≤700nm (prepared by rapid liquid dehydration) is not superconducting down to 4.2K. This may be due to a size-induced structural distortion and an accompanying reduction in the oxygen occupancy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01425675
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...