ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
It has been demonstrated that Si substitution in a PbTiO3 target helps to avoid the formation of a pyrochlore phase, which otherwise occurs during fabrication of the films directly on Si(100) by the pulsed laser deposition technique. The films are perfectly c-axis oriented. Moreover, the ferroelectric properties of PbTiO3 are not affected by Si substitution. As silicon helps the realization of the films at low substrate temperature, the Pb/Ti ratio is maintained close to 1 and the loss factor tan δ in the range of 0.02–0.05. Thus, the integration of nonvolatile ferroelectric random access memory on semiconductors is shown to be possible in a reliable, cost effective, and simple manner. © 1998 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.121006
Permalink