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  • 1
    Electronic Resource
    Electronic Resource
    Enhanced stability of deuterium in silicon (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 3500-3502 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Tight-binding molecular dynamics has been used to simulate vibrationally excited Si–H and Si–D modes. Simulations find that vibrationally excited Si–D bending modes decay much more rapidly than Si–H bending modes, resulting in SiD bonds having much higher stability than SiH bonds. This provides a viable mechanism for reduced degradation in deuterated metal–oxide–semiconductor transistors and deuterated amorphous silicon devices. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121640
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Microscopic nature of Staebler-Wronski defect formation in amorphous silicon (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 371-373 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Light-induced metastable defects in a-Si:H are proposed to be silicon dangling bonds accompanied by pairs of hydrogen atoms breaking a silicon bond, forming a complex with two Si-H bonds. This supports the model of Branz. These defects are the analog of the H2* defect in c-Si and their energy correlates with the bond-angle strain. Several features of the annealing are well described by this defect complex. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120740
    Library Location Call Number Volume/Issue/Year Availability
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    Paper (German National Licenses)
    Fulltext
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