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Microscopic nature of Staebler-Wronski defect formation in amorphous silicon (1998)

Biswas, R. ; Pan, B. C.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 72 (1998), S. 371-373

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Light-induced metastable defects in a-Si:H are proposed to be silicon dangling bonds accompanied by pairs of hydrogen atoms breaking a silicon bond, forming a complex with two Si-H bonds. This supports the model of Branz. These defects are the analog of the H2* defect in c-Si and their energy correlates with the bond-angle strain. Several features of the annealing are well described by this defect complex. © 1998 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.120740

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