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  • 1
    Electronic Resource
    Electronic Resource
    Strain relaxation of GaNxAs1−x on GaAs (001) grown by molecular-beam epitaxy (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 5302-5304 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A series of samples consisting of a strained layer of GaNxAs1−x of different thickness, covered by a GaAs cap layer of 100 nm were grown by molecular-beam epitaxy. The samples have been characterized by high-resolution x-ray diffraction and simulations based on the dynamical theory in order to determine the strain relaxation in GaNxAs1−x layers. It is found that there is a huge difference between the critical thickness determined by x-ray diffraction and the theoretical calculations according to the Matthews and Blakeslee model. The critical thickness of GaNxAs1−x on GaAs is ten times smaller than the theoretical value. The strain relaxation is a crucial point that affects the quality of GaNAs. Photoluminescence measurements are in good agreement with the x-ray diffraction results. The optical properties degraded rapidly when the GaNxAs1−x thickness exceeded the critical thickness determined above. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371516
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  • 2
    Electronic Resource
    Electronic Resource
    Simulations of C28 chemisorption on diamond (001)-(2×1) surface: The comparison between cluster–cluster interaction and cluster–surface interaction (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 6836-6841 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this article, the dynamic behavior of C28 chemisorption on diamond (001)-(2×1) surface was investigated by molecular dynamics simulation. The many-body Brenner potential was employed to describe the interaction between carbon atoms. With the incident energy ranging from 25 to 40 eV, the single C28 was found to have more than 50% of the probability to be chemisorbed on a diamond surface and to form two C–C bonds with one dimer of the surface. Then the chemisorption of two C28 clusters was simulated at the above energy range. The cluster–cluster interaction was found to hinder the next incident cluster to be chemisorbed. Besides, the juxtaposition configuration of two C28 on the surface was observed when their impact points were along the same dimer row. For multicluster impacting, when two or three clusters formed a nucleation site, the forthcoming cluster was easily to be adsorbed close to it. The growth of the C28 cluster assembled film is typically a three dimensional island mode. Our study also showed that within the energy range the C28 clusters retained their cage structure after chemisorption. This is in agreement with experimental results. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1320006
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  • 3
    Electronic Resource
    Electronic Resource
    Infrared to visible upconversion in Er3+-doped-lead-germanate glass: Effects of Er3+ ion concentration (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 4688-4692 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The upconversion mechanism of Er3+ ions has been studied for lead-germanate glasses containing Er2O3 concentrations from 0.1 mol % to 2 mol %. Intense green emission was observed at room temperature due to 4S3/2→4I15/2 transition excited by a cw near-infrared laser beam at 797 nm. This green emission shows a similar intensity for samples with different Er3+ ion concentrations. A weak blue emission of 410 nm originating from the 2H9/2→4I15/2 transition was also observed. This blue emission and a red emission from the 4F9/2 level increase with the increase in Er3+ ion concentration. The bright green emission is attributed to the excited level absorption while the blue emission is due to a third step excitation where energy transfer between excited ions owing to their Coulomb interaction plays a key role. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359436
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  • 4
    Electronic Resource
    Electronic Resource
    Growth of carbon nanotubes on cobalt disilicide precipitates by chemical vapor deposition (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 3297-3299 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have successfully grown carbon nanotubes on cobalt-implanted silicon with various doses. The morphology of such tubes has been examined by scanning electron microscopy, transmission electron microscopy, and Raman scattering. On contrary to the commonly used transition-metal nanoparticle catalysts, nanometer-sized CoSi2 precipitates produced in the as-implanted substrates are believed to act as nucleation centers for the formation of carbon nanotubes. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121629
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  • 5
    Electronic Resource
    Electronic Resource
    Energy dependence of C60–graphite surface collisions (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 4963-4967 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The resilience of C60 fullerene with graphite (0001) surfaces has been investigated by means of molecular dynamics simulations with empirical model potentials. The initial energy of C60 ranges from 30 to 300 eV. It is shown that when the impact energy is above 60 eV, the rebounding energy of C60 is nearly independent of the impact energy. The scattering is highly inelastic and the internal excitation energy of the scattered molecule increases with the incident energy. These results are consistent with experiment. Furthermore, the simulations provide insight into the microscopic aspects of the scattering. The rebounding processes at different energies are found to exhibit similar dynamic behavior and the molecular center-of-mass motion can be regarded as moving in a quadratic harmonic potential. All of these results support a schematic picture to describe nonreactive C60-surface collisions. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367298
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  • 6
    Electronic Resource
    Electronic Resource
    Low temperature growth of GaInNAs/GaAs quantum wells by metalorganic chemical vapor deposition using tertiarybutylarsine (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 6409-6411 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The low temperature growth of highly strained GaInNAs/GaAs quantum wells was investigated by low-pressure metalorganic chemical vapor deposition (MOCVD) using tertiarybutylarsine (TBAs) and dimethylhydrazine. We found that the incorporation behavior of indium in the strained GaInAs layers at low growth temperature was very different from that at high growth temperature. The N content dropped rapidly with increasing In content in the strained GaInNAs layer. It is pointed out that the V/III ratio is an important growth parameter for TBAs based MOCVD. The V/III ratio strongly affected both the photoluminescence intensity and the alloy composition of the GaInNAs. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368967
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  • 7
    Electronic Resource
    Electronic Resource
    Effects of rapid thermal annealing on the optical properties of GaNxAs1−x/GaAs single quantum well structure grown by molecular beam epitaxy (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 245-248 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of rapid thermal annealing (RTA) on the optical properties of GaNxAs1−x/GaAs strained single quantum well (SQW) was studied by low-temperature photoluminescence (PL). The GaNxAs1−x/GaAs SQW structures were prepared by dc active nitrogen plasma assisted molecular beam epitaxy. PL measurements on a series of samples with different well widths and nitrogen compositions were used to evaluate the effects of RTA. The annealing temperature and time were varied from 650 to 850 °C and 30 s to 15 min, respectively. Remarkable improvements of the optical properties of the samples were observed after RTA under optimum conditions. The interdiffusion constants have been calculated by taking into account error function diffusion and solving the Schrodinger equation. The estimated interdiffusion constants D are 10−17–10−16 cm2/s for the earlier annealing conditions. Activation energies of 6–7 eV are obtained by fitting the temperature dependence of the interdiffusion constants. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371852
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  • 8
    Electronic Resource
    Electronic Resource
    Optical injection induced polarization bistability in vertical-cavity surface-emitting lasers (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2999-3001 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the observation of bistable polarization switching in a vertical-cavity surface-emitting laser under optical injection. The wavelength dependence of the switching is measured. It is found that this polarization switching is achieved through injection locking where both the wavelength and the polarization of the vertical-cavity laser are locked to the injected optical signal.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110264
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  • 9
    Electronic Resource
    Electronic Resource
    Investigation of periodicity fluctuations in strained (GaNAs)1(GaAs)m superlattices by the kinematical simulation of x-ray diffraction (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 223-225 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Periodicity fluctuations of layer thickness and composition in a superlattice not only decrease the intensity, they also broaden the width of the satellite peaks in the x-ray diffraction pattern. In this letter, we develop a method that is dependent on the width of satellite peaks to assess periodicity fluctuations of a superlattice quickly. A linear relation of the magnitude of fluctuations, peak width and peak order has been derived from x-ray diffraction kinematical theory. By means of this method, periodicity fluctuations in strained (GaNAs)1(GaAs)m superlattices grown on GaAs substrates by molecular beam epitaxy have been studied. Distinct satellite peaks indicate that the superlattices are of high quality. The N composition of 0.25 and its fluctuation of 20% in a strained GaNxAs1−x monolayer are obtained from simulations of the measured diffraction pattern. The x-ray simulations and in situ observation results of reflection high-energy electron diffraction are in good agreement. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124329
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  • 10
    Electronic Resource
    Electronic Resource
    Tensile tests of ropes of very long aligned multiwall carbon nanotubes (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 3152-3154 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have directly measured the Young's modulus and tensile strength of multiwall carbon nanotubes by pulling very long (∼2 mm) aligned nanotube ropes with a specially designed stress-strain puller. This puller can apply an axial force to the rope and simultaneously measure the corresponding rope elongation and the change in rope resistance. The average Young's modulus and tensile strength obtained were 0.45±0.23 TPa and 1.72±0.64 GPa, respectively, which are lower than those calculated and measured previously. The factors that affect the mechanical strengths of nanotubes are discussed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124094
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