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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 2519-2523 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of atomic bond structure at the deposition surface on the crystallographic orientation dependence of carbon doping in GaAs was studied. Carbon doping into GaAs epilayers was performed by atmospheric pressure metalorganic chemical vapor deposition using extrinsic carbon sources of carbon tetrachloride (CCl4) and carbon tetrabromide (CBr4). Epitaxial growths were done on the exact (100) and four different misoriented GaAs substrates with orientations of (511)A, (311)A, (211)A, and (111)A. The electrical properties were measured by van der Pauw Hall analysis at room temperature. Electrically active concentrations in excess of 1×1019 cm−3 were obtained so that 4 and CBrCCl4 were demonstrated as efficient p-type dopant sources for carbon doping into GaAs. The dependence of hole concentration on the offset angle of CCl4-doped and CBr4-doped GaAs shows the same tendency, whereas the trend of carbon doping from intrinsic carbon doping technique is different from our results. In particular, the hole concentration on the (100) surface is higher than that on the (111)A surface in the cases of CCl4 and CBr4. The result is opposite to that of the intrinsic doping case. A model based on the atomic bond structure of an adsorption site of carbon-containing species is proposed to explain the difference. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical properties of CBr4-doped GaAs and Al0.3Ga0.7As epilayers grown on GaAs substrates with various surface crystallographic orientations from (100) toward (111)A were investigated. Carbon incorporation into GaAs and AlGaAs epilayers was performed by atmospheric pressure metalorganic chemical vapor deposition using CBr4. The electrical properties of the epilayers showed a strong crystallographic orientation dependence. With an increase of the surface offset angle, the hole concentration of CBr4-doped GaAs and AlGaAs epilayers rapidly decreased showing a hump at (311)A. The trend of the hole concentration dependence on the offset angle was not changed with growth temperatures in the range of 550–650 °C. Carbon incorporation is much higher in AlGaAs than in GaAs. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 3887-3889 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: YMnO3 thin films have been sputtered with different O2 partial pressures from 0% to 20%. Only the YMnO3 sputtered without O2 can be crystallized along (001) c-axis orientation after annealing at 870 °C. Mixing 10%–20% O2 partial pressure in the sputtering ambient, the excess Y2O3 in the YMnO3 films suppresses the c-axis oriented crystallization. Effects of crystallization on the ferroelectric properties of Pt/YMnO3/Y2O3/Si (MEFIS) and Pt/YMnO3/Si (MFS) gate capacitors have been investigated. The memory window of the MEFIS capacitor is enhanced by the c-axis oriented crystallization of the YMnO3. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Hoboken, NJ : Wiley-Blackwell
    AIChE Journal 43 (1997), S. 2083-2095 
    ISSN: 0001-1541
    Keywords: Chemistry ; Chemical Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology , Process Engineering, Biotechnology, Nutrition Technology
    Notes: Ignitions, extinctions, and Hopf bifurcations in methane oxidation were studied as a function of pressure and inlet fuel composition. A continuous stirred-tank reactor was modeled with numerical bifurcation techniques, using the 177 reaction/31 species mechanism. Sensitivity and reaction pathway analyses were performed at turning points to identify the most important reactions and reactive species. Then, simulations were compared with experimental data. Multiple ignitions and extinctions as well as oscillations that are purely kinetically driven were found. Ignition to a partially ignited state with considerable reactivity of methane indicates possible narrow operation windows with high selectivities to partial oxidation products. At 0.1 atm, we found a selectivity of up to 80% to CO at 70% CH4 conversion. The ignition to a fully ignited branch is associated with high selectivity to CO2 and H2O. The C2 chemistry inhibits the ignition of methane to the partially ignited branch. The methane ignition temperature exhibits two branches with respect to pressure, with only the low-pressure branch being dominant. Reaction path analysis at ignition conditions shows that the preferred pathway of CH4 oxidation is to form CO and CO2 through CH2O and CH2(s) intermediates. However, at intermediate to high pressures, the recombination of CH3 to C2 H6 also becomes quite significant.
    Additional Material: 14 Ill.
    Type of Medium: Electronic Resource
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