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  • 1
    Digitale Medien
    Digitale Medien
    Postgrowth annealing effects of TiO2 thin films grown on InP substrate at low-temperature by metal-organic chemical-vapor deposition (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 4459-4461 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The structural and electrical properties of titanium dioxide (TiO2) thin films grown on n-type InP(100) substrate by low-pressure metal-organic chemical-vapor deposition have been studied with postannealing. The thin films of TiO2 were deposited at a low temperature of 350 °C using titanium isopropoxide and oxygen. After a postgrowth annealing by the rapid thermal annealing method at a temperature of 850 °C for 15 s, the TiO2/InP structure of only the anatase phase with (101) and (200) peaks was observed by x-ray diffraction analysis. No interface reaction between TiO2 and InP was detected by Auger electron spectroscopy depth profiling. From capacitance–voltage measurement of the Al/TiO2/n-InP structure, the interface density of states at midgap energy and the dielectric constant were approximately low 1012 eV−1 cm−2 at midgap energy and about 50, respectively. © 1996 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.361757
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  • 2
    Digitale Medien
    Digitale Medien
    Sulfur and hydrogen passivation effects on thermal stability of RuO2 Schottky contact on n-type GaAs (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 4276-4278 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Effects of sulfur and hydrogen passivation on the thermal stability of RuO2 Schottky contacts on n-type GaAs have been studied by treatments with (NH4)2Sx solution and hydrogen plasma, respectively. The RuO2 thin films were deposited by dc magnetron sputtering using a Ru target and a mixture of argon and oxygen gases. The thermal stability of RuO2 Schottky contacts during thermal annealing in the temperature range from 200 to 550 °C for 10 min was investigated by current-voltage (I–V) measurements and Auger electron spectroscopy. For the sulfur treated sample, the ideality factor was constant at about 1.01 in the whole temperature range and the barrier height of 0.84 eV was maintained up to 350 °C. Hydrogenation treatment, however, was not so effective in preventing the thermal degradation compared to the sulfurization process. It is confirmed that the effective sulfur passivation to enhance the thermal stability of RuO2/GaAs is responsible for the suppression of an oxidation in the interface between GaAs and RuO2. © 1995 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.359826
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  • 3
    Digitale Medien
    Digitale Medien
    Direct nano-wiring carbon nanotube using growth barrier: A possible mechanism of selective lateral growth (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 6044-6050 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: In this work we report the direct nano-bridging of carbon nanotubes (CNT) between micro-sized islands using conventional photolithography technique necessary for the nanomachining and the molecular device applications compatible with the Si-based process. The most distinct feature in this work is to use a growth barrier of Nb metal or insulating layer on the top of the catalytic metal to prevent the growth of CNT from the vertical direction to the substrate. As a result, CNTs of either "straight line" or a perfect "Y shape" were selectively grown between lateral sides of the catalytic metals or pre-defined electrodes without any trace of vertical growth. The length of the CNTs was 500–1000 nm and the diameter thinner than about 20 nm. We suggest that magnetic and crystallographic characteristics due to the unique interaction between the Nb overlayer and ferromagnetic Ni catalysts and nano-granulation of Ni layer during the growth process are important for the lateral (i.e., parallel to the substrate) CNTs growth. These results clearly indicate that this method would be one of the most feasible fabrication techniques for the nanomachines or the electronic applications with a high integration level. © 2002 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1466523
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  • 4
    Digitale Medien
    Digitale Medien
    A relation between EL2 (Ec−0.81 eV) and EL6 (Ec−0.35 eV) in annealed HB-GaAs by hydrogen plasma exposure (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 3038-3041 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: We present annealing and hydrogenation behaviors for EL2 (Ec−0.81 eV) and EL6 (Ec−0.35 eV) as dominant deep levels in GaAs. During rapid thermal annealing and the hydrogenation process, a relation has been identified between a midgap level group (the EL2 group) at 0.73, 0.81, and 0.87 eV, and a deep-level group (the EL6 group) at 0.27, 0.18, and 0.22 eV below the conduction band. We then discuss a relation between the two groups and their origins.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.344189
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  • 5
    Digitale Medien
    Digitale Medien
    Abnormal behavior of midgap electron trap in HB-GaAs during thermal annealing (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 4422-4425 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The behavior of the EL2 family in horizontal Bridgman-(HB) grown GaAs by two thermal annealing methods, furnace annealing and rapid thermal annealing, was studied through deep level transient spectroscopy (DLTS) measurements, and a similar behavior of another group of electron traps was observed. As the annealing time is increased, the EL2 trap (Ec-0.81 eV) is transformed to the new trap, EX2 (Ec-0.73 eV), and finally to the other new trap, EX1 (Ec-0.86 eV). Also the EL6 group (Ec-0.18, 0.22, 0.27, and 0.35 eV) varied similarly to the EL2 family as a trap (Ec-0.27 eV) is transformed to the first trap (Ec-0.18 eV) and then the second trap (Ec-0.22 eV). This result revealed that the EL2 family is related to the EL6 group. From the study of photocapacitance quenching, the existence of metastable states of the EL2 family is identified. These results suggest that the atomic structure of the EL2 trap may be an arsenic antisite with an interstitial arsenic and a double vacancy, such as VAsAsIVGaAsGa or its complex.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.340187
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  • 6
    Digitale Medien
    Digitale Medien
    Deep levels in Si- and Be-coimplanted GaAs (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 661-664 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Deep levels and electrical properties in Si- and Be-coimplanted semi-insulating GaAs, grown by liquid-encapsulated Czochralski methods, were investigated. The Si implantation with a dose of 8×1012 ions cm−2 and energy of 65 keV was performed into GaAs already implanted with a Be dose of 2×1012 cm−2 and 90 keV for the purpose of an abrupt implant profile in a deeper region. During the Be coimplantation, an electron deep level at 0.62 eV below the conduction band and a hole deep level at 0.68 eV above the valence band were newly observed. In the Be-implanted region of ion-implanted GaAs, the deep levels Ec − 0.62 eV and Ev + 0.68 eV dominate, but are not found in the bulk. From this work, it is suggested that the Ec − 0.62 eV trap could be the defect due to the implantation damage and that the Ev + 0.68 eV trap could be the Be complex related to a Si dose during the implantation.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.349670
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  • 7
    Digitale Medien
    Digitale Medien
    Electric-field-enhanced dissociation of the hydrogen-Si donor complex in GaAs (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 5077-5080 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The passivation and dissociation process of the hydrogen-Si donor complex in plasma-hydrogenated GaAs was presented. The temperature dependent values of dissociation frequencies νd which the first-order kinetics permit, satisfy the relation νd=5.7×1013 exp(−1.79±0.05 eV/kT) s−1 for the no-biased anneals. During electric-field-enhanced anneal experiments, we confirm that no in-diffusion from the passivated region to the bulk is observed in the temperature ranges below 150 °C, and that there is a dissociation frequency region independent of the annealing temperature. Finally, from the electric field annealing experiment on the passivated donor in n-type GaAs, it is suggested that the hydrogen atom in Si-doped GaAs exposed to the plasma hydrogen is negatively charged with the gain of free electrons and passivates the Si donor, and also that the hydrogen atom or the electron of the hydrogen-Si donor complex can be easily released by the electric field.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.347070
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  • 8
    Digitale Medien
    Digitale Medien
    Room-temperature hydrogenation effect on Si- and Be-ion-implanted GaAs (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 1690-1692 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Hydrogenation effects on Si- and Be-ion-implanted GaAs exposed to the hydrogen plasma were investigated. In the sample hydrogenated for 60 min at room temperature, electron mobilities were increased about 21% at 300 K and 1400 cm2/V s at 150 K, showing a little change of the activated Si donor profile. Also, by using deep-level transient spectroscopy and optical deep-level transient spectroscopy, it was observed that the electron and hole traps at Ec−0.62- and Ev+0.68-eV levels, which have been reported as defects due to the implanted damage, were efficiently decreased during the room-temperature hydrogenation. This effect persists during the anneal at 400 °C during 5 min in an argon ambient.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.351198
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  • 9
    Digitale Medien
    Digitale Medien
    Effects of electron deep traps on generation lifetime in denuded zone of n-type Si wafer (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 6979-6981 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The effects of electron deep traps on generation lifetime in heat-treated n-type Czochralski-grown (111) Si were examined by generation lifetime and deep level transient spectroscopy measurements. An order of magnitude increase in generation lifetime was observed for the samples having denuded zone, which experienced the high/low heat treatment (20 h at 1100 °C+16 h at 750 °C). Deep electron traps at Ec − 0.47, 0.42, 0.39, and 0.30 eV occur in the oxygen precipitated region by heat treatment. Especially, the concentration of the Ec − 0.47 eV trap decreased below 5×1012 cm−3 in denuded zone. From these results, we conclude that enhancement of generation lifetime in denuded zone may be dominantly related to the decrease of concentration of the Ec − 0.47 eV trap.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.347636
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  • 10
    Digitale Medien
    Digitale Medien
    Deep levels in undoped bulk InP after rapid thermal annealing (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1665-1668 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Deep levels in rapid thermal annealed InP in metal-insulator-semiconductor (MIS) structures have been studied using deep level transient spectroscopy. Two different insulating layers used in forming MIS structures, a silicon nitride layer and an oxide layer, were fabricated by plasma enhanced chemical vapor deposition and concentrated nitric acid, respectively. In the samples annealed at temperatures between 700 and 900 °C for 10 s, two deep levels having apparent energy depths of 0.43 and 0.35 eV below the conduction band were newly generated. Then, it is considered that they are the defects related with phosphorus vacancy and its complex. Other deep levels observed between 0.55 and 0.79 eV below the conduction band were related with insulating layers. We show an evidence that they might be interface states in the junction of InP and insulator.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.346649
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