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  • 1
    Electronic Resource
    Electronic Resource
    Magnetotransport and magneto-optical properties of δ-doped InSb (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1793-1798 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Results of Shubnikov–de Haas (SdH), cyclotron resonance (CR), and Hall-effect measurements on δ-doped InSb:Si films grown by molecular-beam epitaxy on insulating InP substrates are reported. The investigation covers samples with sheet densities of Si dopant atoms ranging from 1×1011 to 1×1013 cm−2, temperatures from 4.2 to 300 K, and fields from 0 to 7 T. The SdH oscillations show that the samples contain electrons of two-dimensional nature, occupying multiple subbands. The effective masses obtained from the CR data correspond well to the subband occupation densities. The Hall measurements as well as the CR experiments also give evidence for the presence of additional electrons, with the conduction-band-edge mass m*=0.014m0 of bulk InSb, which exist presumably in the bulk of the films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354783
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  • 2
    Electronic Resource
    Electronic Resource
    Growth and characterization of indium antimonide doped with lead telluride (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 2328-2332 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A PbTe dopant source has been used to grow n-type InSb using the molecular beam epitaxy growth technique. From Auger electron spectroscopy studies, no surface segregation of tellurium is observed up to ∼1019 cm−3 doping levels. The correlation between the PbTe flux used during growth and the electron density in the grown films is very good, suggesting that the incorporation of tellurium is near unity. From secondary-ion mass spectroscopy (SIMS) studies, no lead could be detected in the films, even when grown at temperatures as low as 280 °C. This suggests that the lead rapidly re-evaporates from the surface during growth. SIMS depth profiles of tellurium show evidence of solid-state diffusion at 360 °C with a diffusion coefficient ∼10−13 cm2 s−1. Six-probe Hall measurements of carrier transport gave room-temperature mobilities as high as 51 300 cm2 V−1 s−1 at an electron density of 2.9×1016 cm−3 (54 300 at an electron density of 1.9×1016 cm−3 at 110 K) for a film of 4.0-μm thickness on an InP substrate. Our experiences with selenium contamination from previous PbSe evaporations in the same chamber and from impure Sb source material are described as well as the technique used to make the PbTe source material.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351106
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  • 3
    Electronic Resource
    Electronic Resource
    Two-dimensional electron gas magnetic field sensors (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 291-293 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe the use of accumulation layers of electron charge in applications as magnetoresistive devices. We consider two such systems: an InGaAs/InP heterostructure in which we identify a two-dimensional electron gas from the observation of the quantum Hall effect, and InAs films, in which a strong surface accumulation of charge is inferred from depth profiling studies of the galvanomagnetic coefficients. Magnetoresistive devices fabricated from these materials exhibit outstanding field sensitivity and temperature stability due to the existence of electrons of relatively high density and mobility in the accumulation regions. We also model the magnetosensitivity of our devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103717
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  • 4
    Electronic Resource
    Electronic Resource
    Nonlinear optical properties of molecular beam epitaxy grown Bi1−xSbx (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 336-338 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We discuss the first investigation of Bi1−xSbx as an infrared nonlinear optical material. Nondegenerate four-wave mixing experiments at CO2 laser wavelengths yield a large nonlinearity (χ(3)≈3×10−4 esu) which does not saturate at power densities up to 0.5 MW/cm2. Both the ambient and substrate interfaces of the film are highly reflective and the étalon they form is found to have a large effect on the transmission and reflectivity spectra of the as-grown films. This suggests the possibility that constructive interference of the film's internal optical fields could be used to considerably enhance the nonlinear signal.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103683
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  • 5
    Electronic Resource
    Electronic Resource
    Negative magnetoresistance in (InSb)1−xYx at low temperature (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 2041-2045 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the low temperature negative magnetoresistance and magnetization of molecular beam epitaxy grown (InSb)1−xYx for a range of yttrium concentrations (0.03%≤x≤4.0%). Our experimental results from x-ray diffraction, Hall effect, and magnetization measurements suggest that the yttrium atoms are located as interstitials in the InSb lattice and hence do not hybridize their outer shell d electrons with the InSb band leading to localized moments. Although the magnetization versus magnetic field (B) data do not fit brilliouin function for all the temperatures studied, we clearly observe a correlation between the measured negative magnetoresistance and the magnetic moment. We believe that the s–d exchange interaction between the localized electrons of Y atoms and the conduction electrons gives rise to the large negative magnetoresistance observed. A theoretical model is used to explain the scattering mechanism. According to this model, when the conduction electrons in the lower subband of InSb have energy E smaller than the Zeeman splitting AM, where A is the s–d exchange integral and M is the magnetic moment, the lower subband conduction electrons are scattered from the d spins without changing their spin projections. On the other hand, as E becomes greater than AM, the spin-flip process can be thermally activated. For the conduction electrons in the upper subband, both spin-flip and spin-non-flip coexist. Therefore the model uses two distinctive relaxation times rather than just one. A numerical calculation is performed to fit the relation between the magnetoresistance and the magnetic moment of the yttrium atoms. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366936
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  • 6
    Electronic Resource
    Electronic Resource
    Radiative recombination in PbTe quantum wells (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 653-655 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Recombination of quasi-two-dimensional (2D) free-electron-hole pairs in PbTe/(Pb,Eu)Te multiple quantum wells has been studied in time-resolved photoluminescence experiments in the 4–5 μm region on subnanosecond scale by an infrared upconversion method. Over a finite temperature range, the recombination rate is seen to vary approximately as 1/T, as expected for a radiative process in a nondegenerate 2D carrier gas. A model is presented where the recombination is enhanced by the presence of a substantial background hole density in the PbTe wells, generated in a manner analogous to modulation doping.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100908
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  • 7
    Electronic Resource
    Electronic Resource
    Ordering and stability of Pb1−xEuxTe alloys (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 1504-1508 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have observed two kinds of ordering in Pb1−xEuxTe alloys using transmission electron microscopy. One kind of ordering corresponds to long wavelength periodicities of ∼18 A(ring) that are observed for x∼0.4–0.51 along the 〈110〉 and 〈111〉 directions. This ordering is similar to that of spinodal decomposition observed in metallic alloys and is explained by a composition as well as interplanar spacing modulation. We have also obtained electron diffraction patterns from these alloys that show weak diffraction spots with reciprocal lattice vectors that are not allowed for the PbTe structure. The observation of these extra spots can be explained by assuming that the Pb1−xEuxTe alloy forms an ordered compound or superlattice with lattice constants that are multiples of the lattice constants of PbTe. We also present models for the structure of these superlattices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339933
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  • 8
    Electronic Resource
    Electronic Resource
    Étalon enhancement of nonlinear optical response in Bi1−xSbx (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 756-758 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Measurements of the nondegenerate four-wave mixing of CO2 laser beams in a Bi1−xSbx film have yielded the largest high-power third-order nonlinear susceptibilities ever reported at that wavelength (χ(3)(approximately-greater-than)6×10−4 esu at P0(approximately-greater-than)2×105 W/cm2). Furthermore, an étalon effect resulting from the high reflectivity of the Bi1−xSbx films at both the air and substrate interfaces leads to an additional enhancement of the four-wave signal by as much as a factor of 30. A theoretical model based on optical modulation of the free-carrier susceptibility gives results which are in excellent agreement with the data.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105333
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  • 9
    Electronic Resource
    Electronic Resource
    Lead telluride doped with rare-earth elements (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 1997-2000 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This study was undertaken to investigate the potential advantages of certain rare-earth elements as n-type dopants for lead chalcogenide diode lasers grown by molecular beam epitaxy. It was found that holmium (Ho), dysprosium (Dy), and erbium (Er) are n-type dopants in PbTe, producing maximum electron concentrations of 1×1019 cm−3 at 77 K. However, annealing under tellurium-rich conditions caused PbTe samples doped with these elements to convert to p-type under some annealing conditions. The diffusion coefficient of Ho in PbTe at 370 °C is less than 1×10−16 cm2/s at high concentration (〉1×1018 cm−3). At low concentration (∼1017 cm−3), fast diffusing Ho was observed. Significant degradation of contacts to Ho-, Dy-, and Er-doped PbTe was observed after prolonged aging.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334385
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  • 10
    Electronic Resource
    Electronic Resource
    Bismuth- and thallium-doped lead telluride grown by molecular-beam epitaxy (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 6115-6120 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Lead telluride and its high-energy gap alloys are useful for long wavelength diode lasers. In the present study, the control of a donor (Bi) and of an acceptor (Tl) impurity in PbTe was studied in PbTe grown by molecular-beam epitaxy. Several analytical techniques were used, including scanning Auger electron spectroscopy, secondary ion mass spectroscopy, conventional carrier transport measurements, and surface probe thermoelectric measurements. It was observed that bismuth incorporates well and undergoes negligible diffusion over the range of growth conditions used. Thallium surface segregates at high concentrations and diffuses appreciably at high growth temperatures and at high concentrations. Thus, it is only suitable for use in highly dimensionally defined structures at moderate to low concentrations and at relatively low growth temperatures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343593
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