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  • 1
    Electronic Resource
    Electronic Resource
    Combining x-ray and optical spectroscopies in the study of dilute semiconductor nanoparticle composites (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 3850-3857 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We discuss a methodology for the cooperative analysis of optical and x-ray spectroscopies to deduce the thermophysical properties of dilute suspensions of semiconductor nanoparticles in a wide band gap host. X-ray spectroscopy is used to determine concentration and bonding of selected elements. Resonant Raman spectroscopy establishes limits on composition and strain in particles. Analysis of optical absorption, with constraints provided by x-ray and Raman measurements, yields the particle size distribution and concentration. As an example of this approach, we study borosilicate glasses doped with ∼0.1 wt% CdS and heat treated to produce nanoparticles. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372424
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  • 2
    Electronic Resource
    Electronic Resource
    Raman scattering as a compositional probe of II-VI ternary semiconductor nanocrystals (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1506-1508 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We show how Raman optic-mode peak positions and relative intensities can be used in a straightforward way to determine crystallite composition in CdSxSe1−x nanocrystals embedded in glass. These Raman techniques are particularly useful for low-concentration or small-crystallite-size composites where x-ray diffraction is not a viable technique for structural characterization of crystallites.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105160
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  • 3
    Electronic Resource
    Electronic Resource
    Thermal expansion of hydrogenated amorphous germanium thin films (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 271-273 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the first measurements of the linear thermal expansion coefficient αt of hydrogenated amorphous Ge thin films. We have utilized optical reflection interference fringes to measure the gap between the film and a fused quartz substrate in a segment of the film which lifted from the substrate due to intrinsic compressive strain. The linear thermal expansion coefficient of αt=1.7×10−5 K−1 for 300 K 〈T〈 420 K is ∼3 times larger than that of crystalline Ge.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336824
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  • 4
    Electronic Resource
    Electronic Resource
    Carrier-induced strain effect in Si and GaAs nanocrystals (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2033-2035 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: New experimental results on Raman scattering from porous silicon and silicon and gallium arsenide nanocrystals are reported. In all of these systems, almost all vibrational modes become Raman active and are remarkably soft. A carrier-induced strain model is proposed to explain the optical properties of these nanocrystal systems. According to this carrier-induced strain model, the selection rule of crystal momentum conservation for Raman scattering is greatly relaxed in Si and GaAs nanocrystals due to the dilatation strain caused by coupling of excited free carriers with the particle lattice and the optical properties of such systems are dominated by multiphonon assisted free-electron transition processes. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112999
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  • 5
    Electronic Resource
    Electronic Resource
    Capillary-based x-ray collector/collimator for diffraction applications (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2905-2907 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe and characterize a new x-ray optical system in which x rays are steered using multiple reflections within hollow glass capillary tubes. The prototype beam-shaping collector/collimator evaluated for diffraction with CuKα x rays in this letter has throughput of 6% and increases the useful x-ray flux by more than a factor of 4 above that of slit collimation with comparable divergence.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109192
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  • 6
    Electronic Resource
    Electronic Resource
    Optical studies of Ge islanding on Si(111) (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 472-474 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report an experimental study of the optical properties of island layers resulting from molecular beam epitaxial deposition of Ge on Si(111) substrates. The combination of electroreflectance spectroscopy of the E1 transition and Raman scattering allows us to separately determine the strain and composition of the islands. For deposition at 500 °C a deposited layer of 1.36 nm of Ge assembles into 80 nm diameter islands 11 nm thick. The average Si impurity content in the islands is 2.5% while the average in-plane strain is 0.5%. Both strain and Si impurity content in islands decrease with increasing Ge deposition. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118169
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  • 7
    Electronic Resource
    Electronic Resource
    Roughness evolution in polyimide films during plasma etching (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 2294-2296 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report an experimental study on the evolution of etch front roughness in fluorinated polyimide films in oxygen based plasmas. For standard low-pressure (40 mT) etching conditions, the root-mean-square roughness, w, of the polymer surface increases with the amount of material etched, d, as w=0.0265(d−116)β with β=1, independent of etch rate, rf power, and gas composition. The etched surfaces can be described by the statistics of self-affine surfaces with scaling exponent, α=0.6±0.1 and lateral correlation length, ξ, of ∼0.3 μm. A dramatic reduction in roughness is observed under higher pressure etching conditions of 1000–2000 mT. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1364507
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  • 8
    Electronic Resource
    Electronic Resource
    Growth and dissolution of CdS nanoparticles in glass (1999)
    Chester : International Union of Crystallography (IUCr)
    Journal of synchrotron radiation 6 (1999), S. 495-496 
    Details
    ISSN: 1600-5775
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0909049599001259
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