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  • 1
    Electronic Resource
    Electronic Resource
    Effects of rapid thermal annealing on lasing properties of InGaAs/GaAs/GaInP quantum well lasers (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 3788-3791 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thermal processing of strained-layer InGaAs/GaAs/GaInP separated confinement heterostructure single quantum well lasers, grown by gas-source molecular beam epitaxy, is investigated. Rapid thermal annealing (RTA) significantly increases room-temperature photoluminescence from the quantum well and decreases the threshold current density of the lasers, due to a removal of nonradiative centers from the InGaAs/GaAs interfaces. On the other hand, RTA reduces the characteristic temperature and external differential quantum efficiency of the lasers, due to interdiffusion of Ga and In atoms at high temperatures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352275
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  • 2
    Electronic Resource
    Electronic Resource
    Annealing of the deep recombination center in GaInP/AlGaInP quantum wells grown by solid-source molecular beam epitaxy (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 3709-3713 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Time resolved photoluminescence and deep level transient spectroscopy have been used to monitor the effect of rapid thermal annealing on bulk GaInP and GaInP/AlGaInP quantum wells grown by solid source molecular beam epitaxy similar to those used in 650 nm range lasers. Following rapid thermal annealing at temperatures up to 875 °C, reductions in the concentration of several deep level traps are observed. Correlation of these data with photoluminescent intensity and lifetime measurements indicate that the defect labeled N3, 0.83 eV below the conduction band, is the dominant recombination center. The combination of these two transient spectroscopy measurement techniques is therefore not only able to measure the change in deep level concentration, but also to correlate this change with improved carrier lifetimes and, ultimately, reduced threshold current densities in quantum well lasers. There is also evidence to suggest that this same defect, possibly a phosphorous vacancy or a related complex, plays an important role in other GaInP based devices. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371283
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  • 3
    Electronic Resource
    Electronic Resource
    Room-temperature photoconductivity of InGaAs/GaAs strained-layer superlattices (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1878-1880 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InGaAs/GaAs strained-layer superlattices have been grown by molecular beam epitaxy and characterized with photoconductivity measurements. The layers were doped p type by diffusion of Zn in an ohmic contact annealing process. A sudden reduction in room-temperature photoconductivity of the p-type samples was observed at photon energies slightly below the GaAs band gap in all of the samples. This spectral feature is proposed to originate from photoionization of acceptor-like defect states in GaAs, and a model accounting for this phenomenon is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105060
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  • 4
    Electronic Resource
    Electronic Resource
    Influence of aging on the performance of solid source molecular beam epitaxy grown GaInP/AlGaInP quantum well lasers (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 3383-3385 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the influence of aging on the performance of GaInP/AlGaInP quantum well lasers grown by all solid source molecular beam epitaxy. A remarkable improvement in the laser characteristics was observed during the first 20–30 h of continuous wave operation at a constant current corresponding to the initial output power of 100 mW. After such an aging process the threshold current density was typically decreased 30% from its original value. The comparison of the experimentally and theoretically determined gain-current curves revealed the improved laser performance to be caused by the reduction of the nonradiative recombination rate. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116511
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  • 5
    Electronic Resource
    Electronic Resource
    Reduction of surface defects in GaAs grown by molecular beam epitaxy (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1340-1342 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A method to reduce the density of oval defects originating from pregrowth surface particulates and other contaminants for GaAs layers grown by molecular beam epitaxy (MBE) is presented. It appears that if a thin GaAs buffer layer is deposited by alternately supplying Ga atoms and As4 molecules to a GaAs substrate, prior to further growth by MBE, the density of the oval defects in the final layer is reduced reproducibly by a factor of 7, from about 490 to 70 cm−2, when compared with that obtained using MBE alone under closely similar conditions. The improved surface morphology produced by the pulsed beam method is thought to be related to initial film growth which proceeds likely in a two-dimensional layer-by-layer fashion.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98672
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  • 6
    Electronic Resource
    Electronic Resource
    Depth profiles of defects in CdTe(100) overlayers grown by molecular beam epitaxy on GaAs(100) (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 973-974 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The quality of crystal structure of CdTe(100) overlayers grown by molecular beam epitaxy on GaAs(100) substrates has been studied by x-ray diffraction and Rutherford backscattering/channeling methods. The depth distribution of displaced atoms in the overlayers with thicknesses varying from 1.6 to 3.1 μm shows that a defect-free surface is obtained when the film thickness is about 2 μm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98780
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  • 7
    Electronic Resource
    Electronic Resource
    Model of growth of single-domain GaAs layers on double-domain Si substrates by molecular beam epitaxy (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1987-1989 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Growth of single-domain GaAs (100) layers on double-domain Si (100) substrates by molecular beam epitaxy has been investigated. It has been shown that domain orientation of the top layer of GaAs depends on the surface structure of a buffer layer. The size of atomic step heights on the Si surface and the As-Si interaction temperature before film growth are not important factors in controlling domain orientation. Suppression of an antiphase disorder is explained in terms of nonstoichiometric antiphase boundary annihilation operative during growth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102141
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  • 8
    Electronic Resource
    Electronic Resource
    Comparative study of the substrate-film interfaces of GaAs grown by two molecular beam epitaxial methods (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2313-2314 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Carrier concentration profiles in the region of a substrate-film homojunction for n- and p-type GaAs were studied using a capacitance-voltage carrier profiling technique. The GaAs films were grown on GaAs substrates by molecular beam epitaxy (MBE) and by gas-source molecular beam epitaxy (GSMBE). The GaAs homojunctions grown by MBE exhibited a much larger reduction in carrier concentration than those prepared by GSMBE. The highest quality interface, without an observable depletion region, was obtained when an additional hydrogen plasma was used during heat treatment prior to GSMBE growth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103880
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  • 9
    Electronic Resource
    Electronic Resource
    New approach to growth of high-quality GaAs layers on Si substrates (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1801-1803 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaAs films were grown by molecular beam epitaxy (MBE) on Si (100) substrates using a two-step growth process of a 300 °C GaAs buffer layer followed by a 600 °C device layer. The films were examined by Rutherford backscattering and x-ray diffraction methods. A significant reduction in the defect density near the GaAs/Si interface and in the bulk of these films was observed when the buffer layer was deposited by alternately supplying Ga atoms and As4 molecules to the substrate, rather than applying conventional MBE. Possible reasons for this reduction of crystal defects are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98527
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  • 10
    Electronic Resource
    Electronic Resource
    Unipolar avalanche multiplication phenomenon in multiquantum well structures (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1664-1666 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Unipolar electron impact ionization and multiplication in photodiodes consisting of GaAs/AlGaAs multiquantum well heterostructures have been observed. In these diodes, electrons generated by photon absorption and accelerated in the barrier regions scatter bound electrons from the donor-doped GaAs wells. Gain-per-well of 1.13±0.05 and total gain of 100 for the multiplication region have been demonstrated. The photodiodes exhibit high dark current which arises from thermionic emission and tunneling of electrons out of the wells.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108620
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