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  • 1
    Digitale Medien
    Digitale Medien
    Thermal-oxidation-induced strain in 31P+-implanted Si〈100〉 (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 1555-1557 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Si〈100〉 was implanted by 31P+ and annealed in Ar and O2 at 630–1150 °C. In O2 above 1000 °C a characteristic strain developed in the near-surface layer depending on the temperature of the heat treatment, but a similar effect was not observed after annealing in Ar. The formation of strain is explained by a nonperfect near-surface regrowth.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.346633
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  • 2
    Digitale Medien
    Digitale Medien
    Interaction of copper metallization with rare-earth metals and silicides (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 503-505 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Solid-phase reactions of copper films with underlying gadolinium, erbium, and erbium–silicide layers on Si(100) substrates were investigated. For the phase analysis, x-ray diffraction and cross-sectional transmission electron microscopy were used. In the case of Cu/Gd/Si(100), an orthorhombic GdSi2 formed, and, at higher temperatures, copper aggregated into islands. Annealed Cu/Er/Si(100) samples resulted in a hexagonal Er5Si3 phase. In the Cu/ErSi2−x/Si system, the copper catalyzes the transformation of the highly oriented hexagonal ErSi2−x phase into hexagonal Er5Si3. Diverse phase developments of the samples with Gd and Er are based on reactivity differences of the two rare-earth metals. © 2001 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1378054
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  • 3
    Digitale Medien
    Digitale Medien
    Kinetic shape formation during Gd thin film and Si(100) solid phase reaction (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1672-1674 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The initial stage of the solid phase reaction between gadolinium thin film and Si(100) substrate was investigated by x-ray diffraction and scanning electron microscopy. The interdiffusion was retarded by deliberate contamination of the Gd/Si interface to slow down the extremely rapid reaction. The surface of the reacted film showed pattern formation in separate spots. The fractal-like development of this rare-earth silicide indicates a kinetic-type process—modified by the structure of the Gd film and by the emerging stresses—rather than a previously proposed nucleation-controlled growth. © 1999 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.123650
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  • 4
    Digitale Medien
    Digitale Medien
    Epitaxy of orthorhombic gadolinium disilicide on 〈100〉 silicon (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 2144-2145 
    Details
    ISSN: 1077-3118
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Epitaxial orthorhombic GdSi2 was grown by in situ vacuum annealing of a 50-nm Gd layer on 〈100〉 silicon. The epitaxy was proved by x-ray diffraction, electron diffraction, and ion channeling measurements. The lattice mismatch between the orthorhombic GdSi2 and 〈100〉 silicon substrate was found to be 4%.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.98974
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  • 5
    Digitale Medien
    Digitale Medien
    Thickness-dependent formation of Gd-silicide compounds (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 6746-6749 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Gd-silicide phases were investigated by x-ray diffraction. The results showed that not only one phase exists in a Gd thin-film and silicon substrate reactions. The first phase formed was hexagonal GdSi≈1.7, the second orthorhombic GdSi2. The ratio of the two phases depends on temperature of the heat treatment, and at a given temperature and time of annealing, a dependence of the thickness of the evaporated Gd layer was found. At ∼100-nm Gd thickness the dominant phase was orthorhombic GdSi2, at ∼250 nm hexagonal GdSi≈1.7. In the 300–1000-nm interval orthorhombic GdSi2 was the main component again. Rutherford backscattering analysis showed that the phases were found mixed within the layer. This thickness-dependent formation could be described with a simple model proposed by Gösele and Tu [J. Appl. Phys. 53, 3252 (1982)].
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.342006
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  • 6
    Digitale Medien
    Digitale Medien
    New method to measure low Schottky barriers on n-type silicon (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 3537-3539 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: To overcome difficulties which arise when either the series resistance is too high or the Schottky barrier height is too low, a new and simple method was developed to measure barrier height. Crucial point is the application of a "one-sided'' configuration. This method was successfully applied to the GdSi2 system, where φB =0.38±0.005 eV was measured.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.336773
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  • 7
    Digitale Medien
    Digitale Medien
    Oxidation of Gd thin films on Si substrates via grain boundaries (1992)
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 19 (1992), S. 469-472 
    Details
    ISSN: 0142-2421
    Schlagwort(e): Chemistry ; Polymer and Materials Science
    Quelle: Wiley InterScience Backfile Collection 1832-2000
    Thema: Physik
    Notizen: The low-temperature oxidation of Gd thin films evaporated on Si substrates and the role of Si native oxide at the interface of Gd silicide growth have been investigated by x-ray diffraction, XPS and RBS. The Gd layer is extremely reactive towards oxygen and is quickly oxidized in air. Its reactivity can be diminished by introducing a small quantity of Si into the Gd film. In the initial stage Si is accumulated mainly at the grain boundaries of the Gd film, thereby blocking the main oxygen diffusion path and preventing Gd2O3 formation. If Si native oxide is initially present, at low temperature the growth of Gd silicide is slowed down but at high temperature Si/SiO2/Gd is easily transformed to Gd2O3.
    Zusätzliches Material: 4 Ill.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1002/sia.740190188
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