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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 6874-6876 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Spin-dependent tunnel junctions with AlON and AlN barriers have been investigated using high-resolution electron microscopy. Plasma gas composition, nitridation time, and deposited Al thickness were studied independently. Plasma-nitrided Al produces thinner tunnel barriers than those obtained with an oxygen or oxygen+nitrogen plasma, for the same plasma exposure time. Experiments to study an increase in plasma nitridation time for a constant Al deposition thickness showed that overexposure to the plasma resulted in a thinner barrier—possibly due to the competing processes of nitride formation and slight etching of the barrier. The AlN barrier thickness increases monotonically with deposited Al thickness for a constant nitridation time. Electron energy loss spectroscopy compositional mapping has confirmed that nitrogen is present in the barrier layer. The roughness between the barrier layer and the two ferromagnetic layers has also been estimated. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 7368-7370 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magnetization reversal mechanism of four different shaped (rectangular, elliptical, trapezoidal, and hexagonal) tunnel junction elements with area ranging from 0.04 to 12 μm2 has been investigated using Lorentz transmission electron microscopy. It has been found that the reversal field is influenced by element size and aspect ratio but is not strongly dependent upon the element shape. 360° domain walls were often observed to form in the elements and were sustained to a high field when the relative magnetization configuration of the free and pinned layers changed from parallel to antiparallel. The formation of 360° domain walls depends strongly on the shape and aspect ratio of the element, with a lower probability of formation in elements with either an aspect ratio of 1:1 or a hexagonal shape. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Co/Pd multilayer films (MLFs) are of interest because of their potential application as high-density magneto-optical recording media. Co/Pd MLFs with varying Co and Pd layer thicknesses were grown by sputter-deposition onto (100) Si wafers. X-ray diffraction and high resolution electron microscopy were used to study the microstructure of the films, and Lorentz microscopy was used to analyze their magnetic domain structure. The films show an fcc crystal structure with a compromised lattice parameter and a strong (111) crystallographic texture in the growth direction. The compromised interplanar spacing parallel to the surface increased with decreasing thickness ratio (tCo/tPd), and the columnar grain size decreased with increasing Pd layer thickness. Films with tCo=0.35 nm and tPd=2.8 nm (columnar grain diameter 20 nm) showed promising magnetic properties, namely a high perpendicular magnetic anisotropy (1.85×105 J m−3), with a perpendicular coercivity of 98.7 kA m−1, a perpendicular remanence ratio of 99%, and a perpendicular coercivity ratio of 88%. The magnetic domains were uniform and of a narrow stripe type, confirming the perpendicular easy axis of magnetization. The Curie temperature was found to be about 430 °C. Films of pure Co and Pd, grown for comparison, also showed columnar grain structure with grain-sizes of the same order as those seen in the MLFs. In addition the Pd films showed a (111) textured fcc structure.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 607-613 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The crystallization process in SbxGe1−x alloy films has been observed during in situ annealing in a transmission electron microscope. Results are presented for two films with x=0.89 (89 at. % Sb) and x=0.71 (71 at. % Sb), which lie on either side of the eutectic composition (x=0.85). In the former films radial crystals are observed to grow rapidly from discrete nuclei, whereas in the latter films the crystallization process occurs through a near-planar front. In addition, quantitative data obtained from these experiments show that the Sb0.89Ge0.11 films have a higher activation energy for crystal growth and a lower temperature for the nucleation of crystals. Significant differences are observed between the crystallization processes for the two films studied, with the Sb0.89Ge0.11 film showing better potential for development as an ultrafast optical phase-change storage medium. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structure and magnetic properties of sputtered Co/Cu multilayer films with various layer thicknesses have been studied. X-ray diffractometry and high resolution electron microscopy show the films to be polycrystalline with a fcc structure and strong [111] texture in the growth direction. The magnetoresistance (MR) of the films depends critically on Cu layer thickness (tCu), with maximum values for films with tCu around 1 nm. Large differences in saturating field are seen for films with tCu and tCo differing by a nominal 0.1 nm. The magnetic domain structure, studied using Lorentz microscopy, shows strong dependence on tCu. High MR-value films showed evidence of antiphase magnetic domain boundaries. The high MR samples show antiferromagnetic coupling, with higher saturating fields than seen in the ferromagnetically coupled films.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 1422-1428 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Multilayered structures containing thin (1–12 nm) layers of W or Mo, alternating with C or Si, have been prepared to produce thin cross-sectional specimens, and direct structural information on the atomic scale has been obtained using an ultrahigh resolution electron microscope. Layer thickness and flatness have been analyzed—the average layer thickness varies by up to 0.6 nm from the average value, and the flatness of the layers depends on the quality of the substrate surface. The degree of crystallinity and crystal orientation within the layers has also been examined. This information should enable more accurate theoretical models to be proposed for the multilayer materials and their x-ray optical properties. The results for the Mo/Si multilayers suggest a model for their growth when prepared by sputtering.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 4682-4688 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A technique is developed to obtain cross-sectional transmission-electron microscope specimen of a specifically desired region of semiconducting devices. A Au-Ge-Ni based metallization scheme is used to obtain low resistivity ohmic contact to GaAs-AlGaAs based modulation-doped field-effect transistors device. Cross-sectional electron microscopy and energy dispersive x-ray analysis revealed that a uniformly alloyed region (Ni-Ge-As) can be obtained through the proposed metallization scheme. Transmission-electron diffraction, high-resolution electron microscopy, and optical-diffraction analyses are employed to determine the various phases in the contact region. Movement of contact materials both parallel and perpendicular to the device surface is observed at the metallization edges after alloying. Contacts stressed at elevated temperatures to the point of incipient instability are found to exhibit a rougher metal/semiconductor interface.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Copenhagen : International Union of Crystallography (IUCr)
    Applied crystallography online 33 (2000), S. 1246-1252 
    ISSN: 1600-5767
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: Computer simulations of the electron diffraction patterns along the [\bar{1}10] zone axes of four ordered structures within the β-RH2+x phase, with R = Ho or Y, and 0 ≤ x ≤ 0.25, have been performed to establish whether or not the hydrogen ordering could be detected using electron diffraction techniques. Ordered structures within other RH2+x (R = Ce, Tb) systems have been characterized with neutron scattering experiments; however, for HoH(D)2+x, neutron scattering failed to characterize the superstructure, possibly because of the low x concentration or lack of long-range order within the crystal. This paper aims to show that electron diffraction could overcome both of these problems. The structures considered were the stoichiometric face-centred cubic (f.c.c.) fluorite structure (x = 0), the D1 structure (x = 0.125), the D1a structure (x = 0.2) and the D022 structure (x = 0.25). In the stoichiometric structure, with all hydrogen atoms located on the tetrahedral (t) sites, only the diffraction pattern from the f.c.c. metal lattice was seen; however, for the superstoichiometric structures, with the excess hydrogen atoms ordered on the octahedral (o) sites, extra reflections were visible. All the superstoichiometric structures showed extra reflections at the (001)f.c.c. and (110)f.c.c. type positions, with structure D1 also showing extra peaks at (½ ½ ½)f.c.c.. These reflections are not seen in the simulations at similar hydrogen concentrations with the hydrogen atoms randomly occupying the o vacancies.
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