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  • 1
    Electronic Resource
    Electronic Resource
    Optical transitions and carrier relaxation in self assembled InAs/GaAs quantum dots (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 4019-4026 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present experimental results concerning optical transitions and carrier dynamics (capture and relaxation) in self assembled InAs/GaAs quantum dot structures grown by metalorganic vapor phase epitaxy. Photoluminescence (PL) measurements at high excitation level reveal optical transitions above the ground state emission. These transitions are found to originate from occupied hole states by solving the quantum dot eigenvalue problem. Time-resolved studies after non-resonant pulse excitation exhibit a relaxation ladder of the excited carriers from the GaAs barrier down to the ground state of the quantum dots. From both the continuous-wave measurements and the PL-decay curves we conclude that the carrier relaxation at non-resonant excitation is mediated by Coulomb interaction (Auger effect). PL-decay curves after resonant pulse excitation reveal a longer rise time compared to non-resonant excitation which is a clear indication of a relaxation bottleneck inside the quantum dots. We interpret the rise time (≈ 400 ps) in this case to originate from relaxation via scattering by acoustic phonons. The PL-decay time of the ground state emission ≈700 ps is interpreted as the excitonic lifetime of the quantum dot. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363361
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  • 2
    Electronic Resource
    Electronic Resource
    Auger carrier relaxation in self-assembled quantum dots by collisions with two-dimensional carriers (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 7895-7899 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Carrier relaxation in self-assembled quantum dots due to Coulomb interaction with two dimensional (2D) carriers is studied theoretically. Auger coefficients for carrier relaxation rates are calculated in the dipole approximation for Coulomb interaction. The dipole approximation allows one to derive selection rules for Auger relaxation in a cylindrical quantum dot, and to describe a general picture of Auger relaxation via energy levels in self-assembled quantum dots. A numerical example for InAs/GaAs self-assembled quantum dots demonstrates that the Auger effect may lead to relaxation times in the order of 1–10 ps at 2D carrier densities of 1011–1012 cm−2. This result demonstrates the possibility of fast carrier relaxation in quantum dots if the carrier density in the surrounding barrier is sufficiently high. Analytical formulas for Auger coefficients are derived for moderate temperatures of the 2D carriers. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365363
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  • 3
    Electronic Resource
    Electronic Resource
    Acceptor diffusion across InGaAs/InP heterointerfaces (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 931-933 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Results on Zn and Cd diffusion across InGaAs/InP and InP/InGaAs heterointerfaces are reported. Drastic changes in the group III sublattice were obtained near the interface when Zn diffused from an InGaAs top layer across the heterojunction. Diffusion from an InP top layer, as well as Cd diffusion, or simple annealing of the samples had no measurable influence on the stability of the interfaces. The strong interdiffusion of In and Ga host atoms as well as the Zn gettering at the interface is discussed in terms of two diffusion mechanisms, namely, the "kick-out'' mechanism and the vacancy mechanism. The activation energy for the Zn-stimulated Ga interdiffusion across the InGaAs/InP heterojunction was estimated to be EA =3.8±0.3 eV.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102629
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  • 4
    Electronic Resource
    Electronic Resource
    Optical investigations of the dynamic behavior of GaSb/GaAs quantum dots (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1543-1545 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Time-resolved radiative recombination measurements on GaSb quantum dots have been performed. The GaSb quantum dots are grown by molecular beam epitaxy on (100) GaAs through a self-assembly process. Time-resolved measurements show that, after a rapid hole capture process, the photoluminescence decays with a fast and a slow component. The fast component is shortened significantly with higher excitation intensity while the slow component is roughly constant. The radiative lifetimes are much longer than the lifetimes of ordinary GaSb quantum wells with a straddling band lineup. These results support a staggered band lineup and space charge induced band-bending model. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115693
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  • 5
    Electronic Resource
    Electronic Resource
    Realization of optically pumped second-order GaInN-distributed-feedback lasers (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2068-2070 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Room temperature distributed-feedback (DFB) laser operation is demonstrated with emission wavelengths ranging from 389 to 399 nm. Second-order DFB gratings were defined by electron beam lithography and reactive ion etching in the top GaN barrier layer of a GaInN/GaN double heterostructure grown by metalorganic vapor phase epitaxy. Our data allow a precise determination of the effective refractive index neff(λ) over the whole emission range. neff(λ) is compared with previously published values for GaN and GaInN. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116882
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  • 6
    Electronic Resource
    Electronic Resource
    Photoluminescence excitation spectroscopy on intermixed GaAs/AlGaAs quantum wires (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1365-1367 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Quantum wires with widths down to 45 nm have been realized by implantation induced intermixing of a surface near GaAs/AlGaAs quantum well. A very steep lateral potential has been achieved together with extreme low damage in the wire regions. As a result the optical transitions in photoluminescence excitation spectroscopy could be observed for all wire widths. With decreasing wire width an increasing Stokes shift has been determined due to the increasing importance of fluctuations in wire dimensions. A weak wire width dependence of transitions near the former two-dimensional light-hole level was observed, which is attributed to the predicted reduced energy shift of states near this level.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108680
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