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  • 1
    Electronic Resource
    Electronic Resource
    Erratum: "Effect of Al-induced gettering and back surface field on the efficiency of Si solar cells" [J. Appl. Phys. 90, 5388 (2001)] (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5508-5508 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1464647
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  • 2
    Electronic Resource
    Electronic Resource
    Effect of Al-induced gettering and back surface field on the efficiency of Si solar cells (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 5388-5394 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In silicon solar cell fabrication, impurity gettering from Si by an aluminum layer and indiffusion of Al for creating the back surface field (BSF) are inherently carried out in the same process. We have modeled these two processes and analyzed their impact on solar cell efficiency. The output of gettering and Al indiffusion modeling is used as an input for calculation of solar cell efficiency. The cell efficiency gain is obtained as a function of the processes duration. To check the relative contributions of gettering and BSF in improving the cell efficiency, their effects are evaluated together as well as separately. It is found that, for solar cells fabricated from low quality, multicrystalline Si, the efficiency gain is solely due to gettering. In solar cells made of high quality Si, the efficiency gain is primarily due to gettering, but the BSF may play a significant role if the cell thickness is less than about 200 μm. The two effects are found to be synergetic. The model provides a means for optimization of the temperature regime for both processes, as well as for maximization of solar cell efficiency. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1412575
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  • 3
    Electronic Resource
    Electronic Resource
    Modeling of gettering of precipitated impurities from Si for carrier lifetime improvement in solar cell applications (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 2453-2458 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Physical and numerical modeling of impurity gettering from multicrystalline Si for solar cell production has been carried out using Fe as a model impurity. Calculated change of nonradiative recombination coefficient of minority carriers in the course of gettering is used as a tool for evaluating the gettering efficiency. A derivation of the capture cross section of impurity precipitates, as compared to single atom recombination centers, is presented. Low efficiency of the conventional application of the gettering process is explained by the modeling results. The variable temperature gettering process is modeled and predicted to provide high gettering efficiency and short needed gettering times. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371075
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  • 4
    Electronic Resource
    Electronic Resource
    Modeling of nucleation and growth of voids in silicon (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 718-726 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: During Si crystal growth, nucleation and growth of voids and vacancy-type dislocation loops under Si vacancy supersaturation conditions have been modeled. From nucleation barrier calculations, it is shown that voids can be nucleated, but not dislocation loops. The homogeneous nucleation rate of voids has been calculated for different temperatures by assuming different enthalpy of Si vacancy formation. The void growth process has been calculated using a moving boundary formulation. Matching the results of void nucleation and growth simulations and taking into account the competition between the two processes, limited time available, and the crystal cooling rate, it is shown that the experimentally observed void density and size data can be explained if the Si vacancy formation enthalpy is in the range of 2.8–3.4 eV and the void nucleation temperature is in the range of 970–1060 °C. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368128
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  • 5
    Electronic Resource
    Electronic Resource
    Schottky effect model of electrical activity of metallic precipitates in silicon (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 3777-3779 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A quantitative model of the electrical activity of metallic precipitates in Si is formulated with an emphasis on the Schottky junction effects of the precipitate–Si system. Carrier diffusion and carrier drift in the Si space charge region are accounted for. Carrier recombination is attributed to the thermionic emission mechanism of charge transport across the Schottky junction rather than the surface recombination. It is shown that the precipitates can have a very large minority carrier capture cross-section. Under weak carrier generation conditions, the supply of minority carriers is found to be the limiting factor of the recombination process. The plausibility of the model is demonstrated by a comparison of calculated and available experimental results. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126778
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  • 6
    Electronic Resource
    Electronic Resource
    The central works laboratory (1962)
    Springer
    Metallurgist 6 (1962), S. 189-190 
    Details
    ISSN: 1573-8892
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00798253
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  • 7
    Electronic Resource
    Electronic Resource
    The Central Laboratory (1957)
    Springer
    Metallurgist 1 (1957), S. 256-259 
    Details
    ISSN: 1573-8892
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00732291
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