Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Charge transfer and hybridization effects in Ni3Al and Ni3Ga studies by x-ray-absorption spectroscopy and theoretical calculations (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 1312-1317 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This work investigates the charge transfer and Al(Ga) p-Ni d hybridization effects in the intermetallic Ni3Al (Ni3Ga) alloy using the Ni L3,2 and K edge and Al (Ga) K x-ray absorption near edge structure (XANES) measurements. We find that the intensity of near-edge features at the Ni L3 edge in the Ni3Al (Ni3Ga) alloy decreased with respect to that of pure Ni, which implies a reduction of the number of unoccupied Ni 3d states and an enhancement of the Ni 3d state filling in the Ni3Al (Ni3Ga) alloy. Two clear features are also observed in the Ni3Al (Ni3Ga) XANES spectrum at the Al (Ga) K edge, which can be assigned to unoccupied Al 3p-(Ga 4p-) derived states in Ni3Al (Ni3Ga). The threshold at the Al K-edge XANES for Ni3Al shifts towards the higher photon energy relative to that of pure Al, suggesting that Al loses some p-orbital charge upon forming Ni3Al. On the other hand, the Ni K edge shifts towards the lower photon energy in Ni3Al (Ni3Ga) relative to that of pure Ni, suggesting a gain of charge at the Ni site. Thus both Al and Ni K-edge XANES results imply a transfer of charge from Al 3p orbital to Ni sites. Our theoretical calculations using the spin-polarized first-principles pseudofunction method agree with these results. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372015
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    X-ray absorption of Si–C–N thin films: A comparison between crystalline and amorphous phases (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 5609-5613 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X-ray absorption near edge structure (XANES) spectra of crystalline (c)- and amorphous (a)-Si–C–N thin films were measured at the C, N, and Si K edge using the fluorescence and sample drain current modes. A sharp peak similar to the C 1s core exciton in chemical vapor deposition diamond is observed, which can be assigned to the transition from the C 1s to sp3 hybridized states in c-Si–C–N. The C K edge XANES spectrum of a-Si–C–N contains a relatively large 1s→π* peak, implying that carbon atoms in the a-Si–C–N film are bonded largely in graphite-like sp2 configurations. A shift of the a-Si–C–N π* peak towards the lower energy by ∼0.3 eV relative to that of c-Si–C–N is observed, which can be attributed to a higher degree of disorder-induced localization of excited electrons. Both a- and c-Si–C–N N K-edge XANES spectra resemble that of α-Si3N4. The Si K-edge absorption spectra of the Si–C–N thin films indicate a proportional combination of local Si–N and Si–C bonds. The increase of the binding energies of excited electrons and the broadening of the spectral features by structural disorder are also observed in the Si K-edge XANES spectrum of the a-Si–C–N film. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371568
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    X-ray-absorption studies of boron-doped diamond films (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2229-2231 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X-ray-absorption near-edge structure (XANES) measurements have been performed for a variety of boron-doped and undoped diamond films at the C K edge using the sample drain current mode. The C K-edge XANES spectra of B-doped diamonds resemble that of the undoped diamond regardless of the B concentration, which suggests that the overall bonding configuration of the C atom is unaltered. B impurities are found to enhance both the sp3- and sp2-bond derived resonance features in the XANES spectra. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124973
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Electronic structure of oxidized Ni/Au contacts on p-GaN investigated by x-ray absorption spectroscopy (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 2718-2720 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X-ray absorption spectroscopy has been used to investigate the electronic structure of as-deposited and oxidized Ni/Au contacts on p-GaN. The Ni K-, L2,3-, and O K-edges x-ray absorption spectra clearly show the formation of NiO in the annealed contacts. Annealing in air increases Ni-site hole concentration and slightly shortens the nearest-neighbor Ni–O bond length, which enhances p–d hybridization and charge transfer from Ni to O. The observed very low specific contact resistance in the oxidized contacts is found to be due to the enhanced hole concentration at the Ni site. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1370121
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Electronic properties of the diamond films with nitrogen impurities: An x-ray absorption and photoemission spectroscopy study (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 4362-4364 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X-ray absorption near-edge structure (XANES) measurements have been performed for nitrogen (N) containing diamond films with three different N concentrations at the C K-edge using the sample drain current mode. The C K-edge XANES spectra of these diamond films resemble that of the pure diamond regardless of the N concentration, which suggests that the overall bonding configuration of the C atom is unaltered. N impurities are found to reduce the intensities of both the sp2- and sp3-bond derived resonance features in the XANES spectra. The valence-band photoelectron spectra indicate that N atoms cause the broadening of the valence band σ- and π-bond features and the enhancement and reduction of the σ- and π-bond features, respectively. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1334916
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Electronic structure of the Fe–Cu–Nb–Si–B alloys by x-ray absorption spectroscopy (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 115-117 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We measured x-ray absorption near-edge-structure (XANES) spectra of nanocrystalline- (nc-) and amorphous- (a-) Fe73.5Cu1Nb3Si13.5B9 (nc-FCNSB and a-FCNSB) and Fe78Si13B9 (a-FeSiB) alloys at the Fe L3,2 edge using the sample drain current mode and at the Cu L3,2, and Nb L3 edge and Si K edge using the fluorescence mode. The features in the Fe L3-edge XANES spectrum of nc-FCNSB changed shape significantly with the addition of Cu and Nb to the Fe–Si–B alloy under the optimum annealing conditions, indicating that Cu and Nb strongly influence the Fe 3d local electronic structure. Closely examining the Cu L3,2-edge XANES spectrum of nc-FCNSB reveals that the Cu clusters essentially have a body-centered-cubic structure. The white-line features at the Nb L3 edge suggest a slight increase in delocalization of Nb 4d orbits when a-FCNSB is crystallized into nc-FCNSB. The Si K-edge XANES spectrum demonstrates the dominance of Fe–Si bonds around the Si atom in nc-FCNSB. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126895
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Electronic and bonding structures of amorphous Si–C–N thin films by x-ray absorption spectroscopy (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 2393-2395 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X-ray absorption near edge structure (XANES) spectra of hard amorphous a-Si–C–N thin films with various compositions were measured at the C and N K-edge using sample drain current and fluorescent modes. The C K-edge XANES spectra of a-Si–C–N contain a relatively large 1s→π* peak, indicating that a substantial percentage of carbon atoms in the a-Si–C–N films have sp2 or graphite-like bonding. Both the observed sp2 intensity and the Young's modulus decrease with an increase in the carbon content. For N K-edge XANES spectra of the a-Si–C–N films we find the emergence of a sharp peak near the threshold when the carbon content is larger than between 9% and 36%, which indicates that carbon and nitrogen atoms tend to form local graphitic carbon nitride. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1409275
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Electronic structure of the Fe-layer-catalyzed carbon nanotubes studied by x-ray-absorption spectroscopy (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 3179-3181 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X-ray-absorption near edge structure (XANES) measurements have been performed to investigate the local electronic structures of the Fe-catalyzed and stabilized carbon nanotubes (CNT) with various diameters. The intensities of the π*- and σ*-band and the interlayer-state features in the C K-edge XANES spectra of these CNTs vary with the diameter of the CNT. The white-line features at the C K- and Fe L3-edges suggest a strong hybridization between the C 2p and Fe 3d orbitals, which lead to an enhancement of the C K- and reduction of the Fe L3-edge features, respectively, indicative of a charge transfer from C 2p to Fe 3d orbitals. The Fe K-edge spectra reveal a p–d rehybridization effect that reduces p-orbital occupation at the Fe site. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1416165
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Contact charging of insulating polymers (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 896-901 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new model of contact charging based on the change of interfacial dipole energy is proposed. The model can be used to explain the charge exchange between an insulating polymer and a metal with a thin interfacial oxide layer. The energy shift of the polymeric electronic states relative to the metal Fermi level can be associated with the change in interfacial dipole energy. The calculated change in energy for polyethylene in contact with oxidized aluminum is found to be in good agreement with data from photoemission experiments. The results are shown to be useful in improving the existing models for calculating the magnitude of the charge exchange.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336161
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Electronic structure of Ni3Al and Ni3Ga alloys (1999)
    Chester : International Union of Crystallography (IUCr)
    Journal of synchrotron radiation 6 (1999), S. 731-733 
    Details
    ISSN: 1600-5775
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0909049598016203
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...