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  • 1
    Electronic Resource
    Electronic Resource
    Design of gate-confined quantum-dot structures in the few-electron regime (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 1050-1057 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Numerical simulations for the design of gated delta-doped AlGaAs/GaAs quantum-dot structures in the few-electron regime are presented. The confining potential is obtained from the Poisson equation with a Thomas–Fermi charge model. The electronic states in the quantum dot are then obtained from solutions of the axisymmetric Schrödinger equation. Our model takes into account the effect of surface states by viewing the exposed surface as the interface between the semiconductor and air (or vacuum). Various gate configurations and biasing modes are explored. The simulations show that the number of electrons can be effectively controlled in the few-electron regime with combined enhancement and depletion gates. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360339
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  • 2
    Electronic Resource
    Electronic Resource
    An eigenvalue method for open-boundary quantum transmission problems (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2177-2186 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a numerical technique for open-boundary quantum transmission problems which yields, as the direct solutions of appropriate eigenvalue problems, the energies of (i) quasi-bound states and transmission poles, (ii) transmission ones, and (iii) transmission zeros. The eigenvalue problem results from reducing the inhomogeneous transmission problem to a homogeneous problem by forcing the in-coming source term to zero. This homogeneous problem can be transformed to a standard linear eigenvalue problem. By treating either the transmission amplitude t(E) or the reflection amplitude r(E) as the known source term, this method also can be used to calculate the positions of transmission zeros and ones. We demonstrate the utility of this technique with several examples, such as single- and double-barrier resonant tunneling and quantum waveguide systems, including t-stubs and loops. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360132
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  • 3
    Electronic Resource
    Electronic Resource
    Coupled finite element/boundary element method for semiconductor quantum devices with exposed surfaces (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2545-2554 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a study of the boundary conditions for the potential at exposed semiconductor surfaces in split-gate structures, which views the exposed surface as the interface between the semiconductor and air. A two-dimensional numerical algorithm is presented for the coupling between the nonlinear Poisson equation in the semiconductor (finite element method) and Laplace's equation in the dielectric (boundary element method). The utility of the coupling method is demonstrated by simulating the potential distribution in an n-type AlGaAs/GaAs split-gate quantum wire structure within a semiclassical Thomas–Fermi charge model. We also present a comparison of our technique to more conventional Dirichlet and Neumann boundary conditions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356228
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  • 4
    Electronic Resource
    Electronic Resource
    Quantum scattering states in open two-dimensional electronic systems (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 5142-5149 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a method to solve the two-dimensional effective-mass Schrödinger equation for scattering states on open boundary domains. The boundary conditions are developed by partial wave expansion of the known far-field solution and by enforcing continuity of the complex wavefunction and its derivative across the domain periphery. The problem is formulated within the finite element method and the algorithm is used to solve for the scattering states of a two-dimensional electron gas with point scatterers. This technique may be used to study the local field effects within the vicinity of scattering defects in mesoscopic structures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355760
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  • 5
    Electronic Resource
    Electronic Resource
    Bistable saturation in coupled quantum-dot cells (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 3558-3566 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Model quantum dot cells are investigated as potential building blocks for quantum cellular automata architectures. Each cell holds a few electrons and interacts Coulombically with nearby cells. In acceptable cell designs, the charge density tends to align along one of two cell axes. Thus, a cell "polarization,'' which can be used to encode binary information, is defined. The polarization of a cell is affected in a very nonlinear manner by the polarization of its neighbors. This interaction is quantified by calculating a cell–cell response function. Effects of nonzero temperature on the response of a model cell are investigated. The effects of multiple neighbors on a cell are examined and programmable logic gate structures based on these ideas are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354535
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  • 6
    Electronic Resource
    Electronic Resource
    A novel quantum wire formed by lateral p–n–p junctions between quasi-two-dimensional electron and hole systems at corrugated GaAs/AlGaAs interfaces (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 1509-1520 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Numerical modeling of a novel quantum wire structure formed by the confinement of electrons between lateral quasi-two-dimensional (Q2-D) p–n junctions in a corrugated GaAs/AlGaAs heterostructure is reported on. Such a quantum wire may be realized at the tip of a Si-doped AlGaAs overgrown V groove in a SI–GaAs substrate due to the surface orientation dependence of Si doping. The two-dimensional conduction and valence band potential profiles for the electron and hole charge densities are solved within a semiclassical Thomas–Fermi screening model. The quantized electronic wire states at the heterointerface are then obtained by solving the two-dimensional effective mass Schrödinger equation using the calculated potential profile. The parameter space of the one-dimensional electron system is explored to establish which features of the structure are dominant factors in controlling the electronic states. It is demonstrated that the energy level spacing of the quantum wire depends primarily on the lateral confinement width in the n-type region at the tip of the V groove. The ground state energy of the wire is shown to depend on both the lateral confinement width and the vertical heterointerface confinement width. The results of our initial calculations are also reported on to incorporate lateral gates on the surface to obtain direct control of the quantum wire transport properties. The advantages of fabricating quantum wires with this structure compared to conventional methods of electrostatic confinement are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353225
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  • 7
    Electronic Resource
    Electronic Resource
    Real-space transfer from quantum wells by polar optical phonon scattering (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2315-2317 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We calculate the rate at which electrons bound in a semiconductor quantum well are scattered out of the well by absorption or emission of polar optical phonons. This escape rate is important in real-space transfer devices and as a loss mechanism in high electron mobility transistors. Both quantum confinement effects and the two-dimensional (2D) to three-dimensional (3D) nature of the scattering are included. For all but very shallow wells, the real-space transfer rate is much smaller than either the bulk (3D) scattering rate or the confined (2D) scattering rate. Quantum resonances in the final state result in oscillations in the scattering rate as a function of electron energy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101113
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  • 8
    Electronic Resource
    Electronic Resource
    Comment on "Energy requirements in communication'' [Appl. Phys. Lett. 51, 2056 (1987)] (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 2191-2191 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99531
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  • 9
    Electronic Resource
    Electronic Resource
    Transmission zero engineering in lateral double-barrier resonant tunneling devices (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2120-2122 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transmission zero engineering in lateral double-barrier resonant tunneling devices is investigated. We show that, by inserting a resonant cavity in the quantum well region of a lateral double-barrier resonant tunneling structure and engineering the placement of transmission zero-pole pairs, the current peak-to-valley ratio of the device can be drastically improved at low temperature. An advantage of this structure also is that a lower peak voltage can be obtained compared to the corresponding lateral double-barrier resonant tunneling device. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115604
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  • 10
    Electronic Resource
    Electronic Resource
    Bistable saturation in coupled quantum dots for quantum cellular automata (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 714-716 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A simple model quantum dot cell containing two electrons is analyzed as a candidate for quantum cellular automata implementations. The cell has eigenstates whose charge density is strongly aligned along one of two directions. In the presence of the electrostatic perturbation due to a neighboring cell, the ground state is nearly completely aligned (polarized) in one direction only. The polarization is a highly nonlinear function of the perturbing electrostatic fields and shows the strong bistable saturation important for cellular automation function.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108848
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