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  • 1
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    The @journal of eukaryotic microbiology 28 (1981), S. 0 
    ISSN: 1550-7408
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology
    Notes: Prorocentrum micans Ehrenberg, a free-living marine dinoflagellate, was used to test the intracellular toxic action of cadmium. The cells were cultivated in Erdschreiber medium, with Cd concentrations of 10–100 ppb. Thin sections of treated cells, examined ultramicroscopically, exhibited vacuolations, increased numbers of lysosomes, and severe mitochondrial damage. The first two alterations are a general response to toxicity; the third is Cd specific. Although some chloroplasts were affected by Cd, they were not very sensitive to its action. The nuclear apparatus was not morphologically affected.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    The @journal of eukaryotic microbiology 41 (1994), S. 0 
    ISSN: 1550-7408
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology
    Notes: Parathion, an organophosphorus insecticide, is highly toxic to the two free-living marine dinoflagellates Prorocentrum micans Ehrenberg (autotrophic) and Crypthecodinium cohnii Biechler (heterotrophic). To study its non-antiacetylcholinesterase action we assessed its effect on the mitochondrial system, as shown by changes in intracellular ATP concentration and in rhodamine 123 fluorescence evaluated by image analysis. The technique of image analysis permits direct assessment of changes in the overall activity of mitochondria in living cells. Mitochondrial structures were also examined in the electron microscope. The three methods of investigation yielded complementary results. In P. micans, parathion noticeably altered mitochondria but did not significantly alter ATP concentrations. In C. cohnii, however, mitochondrial disturbance was slight, whereas ATP increased greatly. We think, therefore, that parathion has different effects on mitochondria in the two organisms, and in particular that it increases mitochondrial activity in C. cohnii.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    The @journal of eukaryotic microbiology 33 (1986), S. 0 
    ISSN: 1550-7408
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology
    Notes: . The combined action of cadmium and selenium was investigated in two unicellular marine phytoplankton organisms, Prorocentrum micans Ehrbg. and Crypthecodinium cohnii Biecheler, in culture. When present simultaneously in low concentrations, the toxicity of Cd and Se is decreased (antagonism) whereas if one of these elements is present at high concentration, especially for a long period, their toxicity is increased (synergism) more than if they were separate. This interaction affected cell organelles in the following ways: vacuolation, development of chloroplast pyrenoids, and elicitation of lipid vesicles, starch vesicles, giant mitochondria, and lysosomes. Possible competition between these two elements for binding sites is discussed.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    The @journal of eukaryotic microbiology 32 (1985), S. 0 
    ISSN: 1550-7408
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology
    Notes: Growth of cultures of the dinoflagellate Prorocentrum micans Ehrbg. was slowed by parathion 〉1 ppm. Parathion also decreased chlorophyll content and perturbed cellular ultrastructure, eliciting especially plastoglobuli in their chloroplasts. Toxicity of this organophosphorous insecticide is unlikely to be due to its anticholinesterase activity since P. micans appears not to contain cholinesterase. Fluorescence kinetics show that parathion affects the photosynthetic system, particularly photosystem II.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 3902-3911 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Systematic Raman scattering experiments were carried out on [001] GaAs implanted with 70-keV Be+ ions both after implantation for samples subjected to fluences spanning the 1013–1015 cm−2 range and after successive isochronal thermal annealing steps performed between 200 and 900 °C for a selected series of Be doses. The implantation-induced damages were observed via the modifications with increasing fluence, of the first-order Raman line parameters (mainly for the LO peak) classified in terms of mode energy softening and linewidth increase. These modifications were quantitatively accounted for within the spatial coherence-length reduction formalism, which makes it possible to evaluate the mean size of unperturbed regions in as-implanted GaAs. Upon successive thermal treatments, the implanted layers were found to recover their crystalline perfection at a temperature as low as 500 °C. Above this temperature the Be electrical activation is evidenced by the sudden and drastic modification of only the "longitudinal'' response, which is interpreted as due to the coupling between the LO phonon and an overdamped plasmon. The detailed analysis of the coupled-mode behavior is presented in the case of p-doped GaAs. From the Raman line-shape analysis, including a near-surface free-carrier depleted zone, we have obtained information about the electrical properties of the layer in terms of carrier density and mobility. It is further shown that in the case of strong damping, the ratio ω2p/Γp, where ωp and Γp are, respectively, the plasmon frequency and damping, is a pertinent quantity since it is proportional to the electrical conductivity. All the reported Raman conclusions agree well with results found in the literature that were obtained from direct electrical techniques. Possible mechanisms involved in the electrical activation of Be in GaAs are briefly discussed.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2072-2074 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The ability to grow Si1−xGex thin films on single-crystal silicon or fused silica substrates by the pulsed excimer laser ablation from a sintered SiGe target is investigated. The stoichiometry of the deposits was found to depend essentially on the Ge enrichment of the ablated target surface. Crystalline layers were obtained for substrate temperatures higher than a threshold value depending on its nature. Finally, surfaces, nearly free from droplets, were achieved by optimizing the laser irradiation conditions. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 969-971 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Formation of epitaxial Si1−yCy substitutional alloy layers on monocrystalline silicon surfaces with y≈1 at. % is reported. The preparation method was carbon ion implantation, followed by KrF excimer laser annealing. Results of Rutherford backscattering (RBS), secondary ion mass spectrometry (SIMS) and infrared absorption analyses are compared. The authors concluded that, up to ∼1 at. % carbon content, the dominant process is nonequilibrium trapping of carbon in substitutional lattice sites upon fast resolidification. Above this concentration the complex carbon redistribution processes are influenced by silicon carbide precipitation in the melt and segregation effects in the near-surface region. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 1029-1031 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Midinfrared (3.7–5.3 μm) electroluminescent devices based on a quantum-cascade (QC) design have been demonstrated using InAs/AlSb heterostructures, grown on GaSb substrates. The very high conduction band discontinuity (〉2 eV) of this material system allows the design of QC devices at very short wavelengths. Well-resolved luminescence peaks were observed up to 300 K, with a full-width-at-half-maximum to peak wavelength ratio (Δλ/λ) of the order of 8%. The emission wavelengths are in good agreement with the results of our model. The emitted optical power is lower than that predicted, due to a nonoptimized electron injection into the active region. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Analytical chemistry 46 (1974), S. 1591-1595 
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Annals of public and cooperative economics 53 (1982), S. 0 
    ISSN: 1467-8292
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Economics
    Type of Medium: Electronic Resource
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