ISSN:
1432-0630
Keywords:
61.80 Ki
;
84.80 Gc
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract Problems caused by the statistical variation of the number of exposing ions in ionbeam lithography are discussed. Using Poisson statistics, the minimum dose required for exposure as a function of resist sensitivity and minimum feature size is calculated. It is found that, although ion-beam resists show a very high sensitivity of 1011 to 1013,cm−2, it would be possible to use still more sensitive resists and obtain submicron linewidth resolution.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00619085
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