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  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2708-2710 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Combinations of high TC superconducting and ferroelectric films may give rise to tunable, high-Q microwave components. c-axis oriented YBa2Cu3O7−δ films were grown by laser ablation on (001) and vicinically cut KTaO3 substrates and studied by x-ray diffraction and electron microscopy. Competitive superconducting properties were registered. YBa2Cu3O7−δ/KTaO3/YBa2Cu3O7−δ trilayers were deposited on silicon-on-sapphire buffered by CeO2/Y-ZrO2. The dielectric permittivity of KTO3 at 15–100 K decreased considerably when the layer was polarized by a dc voltage. A loss factor tan δ=0.007 was measured at 100 kHz and T=50–100 K. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1063-7834
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The nucleation and growth of islands of a new phase on the surface of solids has been studied both experimentally and theoretically for the particular case of the transition from the pyrochlore to perovskite phase in a thin film of a lead zirconate-titanate ferroelectric. This transformation was chosen because the new-phase islands have a stable circular shape in this case, a relatively large size (10−5–10−4 m) permitting their observation with an optical microscope, and a low growth rate (10−8–10−9 m/s). A theoretical analysis of the process, based on the kinetic theory of first-order phase transitions proposed earlier, has been carried out and the behavior in time of all main characteristics of a phase transformation, namely, nucleation rate, concentration of the new-phase islands, their size distribution, and relative overheating, has been calculated. The same characteristics have been measured experimentally, thus permitting one for the first time to make a thorough comparison of the theoretical with experimental data on the kinetics of first-order phase transitions. They have been found to be in a good agreement.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Springer
    Physics of the solid state 39 (1997), S. 666-670 
    ISSN: 1063-7834
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Kikuchi patterns produced by quasi-elastic backscattering of electrons with energies of 0.6–2 keV from a thin Si(111)7×7 near-surface layer are studied. It is shown that experimental data obtained for silicon, just like those for metals, can be described satisfactorily by calculations made in single-scattering cluster approximation, as well as in terms of a model taking phenomenologically into account the forward-focusing of backscattered electrons as they escape from the crystal. It has thus been demonstrated that the forward-focusing effect at an energy E=2 keV plays a dominant role in the formation of Kikuchi patterns, which permits their use for visualization of the atomic structure of a surface. The dependences of the focusing efficiency on the parameters of the atomic chains along which electrons propagate have been established for the closest-packed crystal directions.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Springer
    Physics of the solid state 41 (1999), S. 369-374 
    ISSN: 1063-7834
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract To reveal the mechanism of Kikuchi-band formation, the total Si(100) diffraction pattern produced by 2-keV quasi-elastically backscattered electrons is compared to model calculations made in the single-scattering approximation for clusters constructed with different numbers of close-packed (110) planes. The formation of the Kikuchi bands is shown to be governed by two types of electron scattering in a crystal. The dominant contribution to enhanced electron-scattering intensity within a band comes from the forward-focusing effect as the electrons move along the numerous interatomic directions in the (110) planes. The other mechanism responsible for the sharp edge regions in the Kikuchi bands involves electron scattering from the nearest planes. It is proposed to use the specific profile of the Kikuchi bands in estimating the shape and size of light-element crystallites forming during initial stages of island-film growth.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Springer
    Technical physics letters 23 (1997), S. 142-143 
    ISSN: 1090-6533
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract In this investigation the focusing of medium-energy electrons is used to visualize the thermally activated reconstruction of a thin film of silver (6 monolayers) deposited on a Si(111) 7×7 surface at room temperature. It is shown that the initial unannealed film consists of Ag(111) domains of two types, mutually misoriented in azimuth by 180°. When the sample is heated to 350–400°C, the film recrystallizes and a single-domain epitaxial layer of Ag(111) is formed.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Springer
    Technical physics letters 23 (1997), S. 134-136 
    ISSN: 1090-6533
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The diffraction patterns are calculated for 2 keV electrons scattered quasi-elastically by C60 molecules adsorbed on a solid surface. It is shown that when the molecules are bound to the substrate strongly enough the symmetry of these patterns reveals uniquely the orientation of the adsorbed fullerenes. A new and effective method that takes into account phenomenologically the focusing of the scattered electrons is proposed for modeling the diffraction patterns
    Type of Medium: Electronic Resource
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  • 7
    ISSN: 1063-7834
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Epitaxial SrBi2Nb2O9 films were grown by laser ablation on (001)YBa2Cu3O7−δ /(100)SrTiO3 and (001)NdGaO3, with c axis normal to the substrate plane. The SrBi2Nb2O9 films were grown in a layer-by-layer regime on NdGaO3 substrates in 25-Å steps at a condensation temperature of 700 °C. Microinclusions of secondary phases and a-oriented grains were observed to exist on the surface of (001)SrBi2Nb2O9 films grown on (001)YBa2Cu3O7−δ /(100)SrTiO3. The dielectric permittivity of the SrBi2Nb2O9 films measured along the c axis is 123 (T=300 K, f=100 kHz), and tan δ≈0.04.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Springer
    Physics of the solid state 40 (1998), S. 1241-1245 
    ISSN: 1063-7834
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Diffraction patterns produced by quasi-elastically backscattered electrons focused in a thin single-crystal Si(100)2×1 near-surface layer have been studied. The measurements performed in the 0.6–2-keV range are compared with calculations made in the single-scattering cluster approximation. This model is shown to describe adequately the experiment. An analysis is made of the relation among the diffraction patterns observed for different silicon faces, and of the effect of the primary-electron beam orientation. The relations governing the focusing of quasi-elastically backscattered electrons escaping from the crystal along the main crystallographic directions have been established. The various aspects of the effect for backscattered electrons undergoing inelastic interaction with the electron subsystem of the crystal have been investigated.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Springer
    Physics of the solid state 42 (2000), S. 554-560 
    ISSN: 1063-7834
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The mechanism of the formation of the diffraction patterns upon inelastic reflection of mean-energy electrons from the VSe2(0001) layered crystal has been investigated. It is found that the strong scattering of electrons by short atomic chains of the Se-V-Se layer triads leads to the weakening of electron focusing and the enhancement of diffraction scattering in deeper layers, which gives rise to the Kikuchi lines. It is demonstrated that, at an energy of 2 keV, the diffraction pattern is adequately described by the cluster model of single scattering. The atomic structure of thin near-the-surface layer of VSe2 has been investigated by the computer simulation of experimental data.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Springer
    Technical physics letters 24 (1998), S. 268-269 
    ISSN: 1090-6533
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The crystal structure of silver clusters formed on the surface of a Si(100)−2×1 single crystal by annealing of a thin Ag film deposited on a slightly heated crystal was studied by diffraction of quasielastically scattered medium-energy electrons. Simulation of the diffraction pattern obtained at 2 keV showed that the silver islands formed on silicon have an ordered structure corresponding to bulk silver and a fixed orientation Ag(100) ∥ Si(100) and [100]Ag∥ [100]Si relative to the substrate.
    Type of Medium: Electronic Resource
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