ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The effects of high temperature rapid thermal annealing (HT-RTA) using a flat gas flame on the electrical properties of phosphorus-doped polycrystalline silicon (poly-Si) films in association with their microscopic structure were studied. Samples with a phosphorus concentration of 3.1×1017–6.0×1020 cm−3 were prepared and annealed by HT-RTA ranging from 1150 to 1350 °C. During HT-RTA, the sample surface was laterally swept by gas flames. The resistivity of the samples decreased with increasing annealing temperature, and the lowest resistivity was 4.8×10−4 Ω cm for the sample doped with P of 6.0×1020 cm−3 when annealed at 1350 °C. Hall mobility, on the other hand, increased first and then decreased with increasing P concentration. The highest Hall mobility was 71.3 cm2/V s for the sample annealed at 1350 °C of which the P concentration was 3.5×1019 cm−3. The results suggest that the grain boundary potential barriers for carriers decreased with increasing doping concentration and annealing temperature, and that the total area of grain boundaries in the films decreased with increasing annealing temperature because of secondary grain growth and the shrinkage of boundary width. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.362527
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