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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 6408-6414 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The kinetics for dissolution/growth of defects in Czochralski silicon wafers during a 1 h high temperature annealing at 1100 °C has been investigated. The size and distribution of point defects such as vacancy, self-interstitial and oxygen interstitial, are simulated for oxygen and hydrogen ambient annealing. The boundary conditions are analyzed separately for hydrogen and oxygen annealing. A deterministic homogeneous model is used for describing the defect kinetics. The self-interstitial injection rate during oxide annealing is calculated from the Deal-Grove model. Simulated void and oxygen size distributions are compared to B- and C-mode capacitor failure distribution functions. Experimental and theoretical data show that voids can be dissolved during either oxygen or hydrogen annealing, while oxygen precipitates are dissolved during hydrogen annealing and only partially dissolved during oxygen annealing. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 7730-7735 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of the carrier recombination process in silicon on the microwave reflection coefficient is analyzed in the frequency domain. The process is described using a two level recombination/trapping model. Carrier recombination kinetics are characterized by four parameters, two of which are related to the recombination and the other to the trapping processes. These parameters are evaluated for Czochralski silicon wafers based on Nyquist plots. In the evaluation procedure, a nonlinear simplex method is used for fitting the experimental data to the model. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 4601-4608 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A method for determining local parameters in polycrystalline silicon with "columnar'' boundaries is described. The effective recombination velocity at the boundary, the diffusion length, and the lifetime of the minority carriers are determined by measuring the first Fourier harmonic of the short-circuit current generated at a shallow n+p junction by a gated electron beam. In the theoretical analysis diffusion length, lifetime, and effective recombination velocity of the carriers as well as lumped parameters of the junction are taken into account. A simple relation is found for determining the lifetime. The experimental measurement is made on polycrystalline silicon solar cells using an electron probe microanalyzer.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2401-2405 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The short-circuit current in a polycrystalline semiconductor may be distorted by the local defects or by the local interface defects (variation of the effective recombination velocity at the grain boundary). These defects can be determined from the steady-state electron-beam-induced current. The expression for the contrast coefficient C for the above defects are given. In the analysis, the generation of the excess carriers is assumed to be uniform in a sphere tangent to the semiconductor surface. The p-n junction is placed on the surface of the semiconductor.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2910-2913 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The apparatus is described that has been used to determine the lifetime, the effective recombination velocity, and the diffusion length near the grain boundary in a polycrystalline silicon solar cell. The lifetime has been estimated from rise of the electron-beam-induced current after switching on the incident electron beam; the diffusion length and the effective recombination velocity have been determined from the steady-state electron-beam-induced current characteristics. The experimental rise-time characteristics are compared with theoretical ones.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 951-957 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A relation for the short-circuit current near a grain boundary perpendicular to the surface of the solar cell is given. In the analysis a point-generation source is assumed. The grain parameters such as the lifetime and the diffusivity of the minority carriers and the effective recombination velocity are determined from the decay curve of the short-circuit current induced by the electron beam. Since the depletion layer capacitance C and the series resistance R in the solar cell are large, the parameter RC is taken into account in the analysis of the short-circuit current.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Journal of periodontal research 23 (1988), S. 0 
    ISSN: 1600-0765
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: It has generally been assumed that oral sulcular epithelium, being nonkeratinized, is a vulnerable region which allows bacterial products to pass from the gingival sulcus to the subjacent connective tissue. It has also been suggested that inducing keratinization of the oral sulcular epithelium might create a better barrier to such material. However, this approach ignores the effect of a permeable junctional epithelium, for if exogenous material penetrates this epithelium then the presence of keratinization may be unimportant. Rats possess an orthokeratinized oral sulcular epithelium and so represent what might be considered as an ideal sulcus lining. The protein tracers horseradish peroxidase or microperoxidase were instilled into the gingival sulcus of anesthetized rats. After 1 h, the animals were killed and fixative applied topically and by perfusion. The mandibles were detached, decalcified in EDTA to permit removal at the gingival attachment and sectioning, reacted with diaminobenzidine and H2O2 to visualize the tracer, and prepared for light and electron microscopic examination. Controls consisted of: a) animals that had not been treated with horseradish peroxidase, and b) horseradish peroxidase-treated animals incubated without H2O2. Microscopic examination revealed penetration of the tracers through the junctional epithelium and into the underlying connective tissue, but never through the adjacent oral sulcular and gingival epithelium. These results suggest that material placed in the sulcus can enter the connective tissue via the junctional epithelium even when the adjacent oral sulcular epithelium forms a keratinized barrier.
    Type of Medium: Electronic Resource
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  • 8
    ISSN: 1460-2695
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Both experimental and analytical investigations were conducted to study crack initiation and growth of small cracks, near-threshold growth behavior of large cracks at constant R-ratio/decreasing ΔK and constant Kmax/decreasing ΔK, respectively, for 9310 steel. The results showed that a pronounced small-crack effect was not observed even at R = −1, small cracks initiated by a slip mechanism at strong slip sites. Worst-case near-threshold testing results for large cracks under several Kmax values showed that an effect of Kmax on the near-threshold behavior does not exist in the present investigation. A worst-case near-threshold test for a large crack, i.e. constant Kmax/decreasing ΔK test, can give a conservative prediction of growth behavior of naturally initiated small cracks. Using the worst-case near-threshold data for a large crack and crack-tip constraint factor equations defined in the paper, Newman's total fatigue-life prediction method was improved. The fatigue lives predicted by the improved method were in reasonable agreement with the experiments. A three-dimensional (3D) weight function method was used to calculate stress-intensity factors for a surface crack at a notch of the present SENT specimen (with r/w = 1/8) by using a finite-element reference solution. The results were verified by limited finite-element solutions, and agreed well with those calculated by Newman's stress-intensity factor equations when the stress concentration factor of the present specimen was used in the equations.
    Type of Medium: Electronic Resource
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  • 9
    ISSN: 0038-1101
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Solid State Electronics 28 (1985), S. 1207-1214 
    ISSN: 0038-1101
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Type of Medium: Electronic Resource
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