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  • 1
    Electronic Resource
    Electronic Resource
    The improvement of phase modulated spectroscopic ellipsometry (1992)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 2958-2966 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Spectroscopic ellipsometry using photoelastic modulator [phase modulated spectroscopic ellipsometry (PMSE)] has been improved in the spectral range. Spectroscopic ellipsometry using the rotating analyzer [rotating analyzer spectroscopic ellipsometry (RASE)] has demonstrated its capability of measuring the reflectivity ratio, ρ(ω), from 1.5 to 6 eV with a single scan, but PMSE has not been able to do so. We demonstrate that PMSE also can measure ρ(ω) from 1.5 to 6 eV with a single scan. We discuss the problems and show their solutions to achieve this goal. We also discuss the accuracy of our PMSE by comparing the spectral data by RASE with those by our PMSE. We find that the simplest possible procedure with our system provides reasonably accurate values, after including the zone average which is easy to perform with our system. The extension of the spectral range is a decisive advantage, especially in studying the E1 structure of the wide band gap materials such as ZnSe.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1142593
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Electron beam electroreflectance studies of GaAs and CdTe surfaces (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1584-1586 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An electron beam electroreflectance (EBER) system has been built and used to investigate GaAs and CdTe sample surfaces. EBER permits one to go to low temperatures, to couple electroreflectance with high-vacuum techniques and to study the effects of different surface treatments. Analysis shows that the EBER technique leads to only negligible thermal modulation of the sample for low-energy electron beams such as that used here. The results of our measurements before and after sputtering with 2 keV O+2 ions clearly show that the measurements are very sensitive to the condition of sample surfaces. Analysis of the results shows the existence of distinct surface and bulk signals and gives detailed information about the surface before and after sputtering. Comparison of our EBER results with room-temperature electrolyte-electroreflectance results on both GaAs and CdTe confirms the analysis and establishes that electroreflectance is a surface-sensitive technique.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99088
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Study of the interface of undoped and p-doped ZnSe with GaAs and AlAs (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 42-44 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used electrolyte electroreflectance (EER) to characterize ZnSe/GaAs and ZnSe/AlAs interfaces. The great sensitivity of EER to interface space-charge regions enabled us to detect both interface crossover transitions and transitions to triangular-well interface states. The observation of these transitions provides the first unambiguous proof that the ZnSe/GaAs interface is type I and allowed us to determine the band offsets and band bendings, the diffusion lengths across each interface, and the amount of interdiffusion.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102641
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  • 4
    Electronic Resource
    Electronic Resource
    Electroreflectance and photoluminescence study of the effect of hydrogen on heavily doped GaAs/AlGaAs structures (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2829-2831 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Highly doped semiconducting heteroepitaxial structures are commonly found in advanced devices. It is difficult to interpret quantitatively the results of optical measurements on such structures because the strong built-in electric fields present invalidate the low-field theories usually used to interpret those results. We have studied by electrolyte electroreflectance and photoluminescence a GaAs/AlGaAs resonant tunneling structure with a highly n-doped GaAs substrate and cap, before and after hydrogenation. We also have developed a new, improved microscopic theoretical treatment of the effects of strong fields on the local dielectric function and have used that treatment to evaluate quantitatively the effect of hydrogenation on the densities of shallow donor levels and of deep traps in the GaAs cap and to find the interface charges and band-pinning levels in the resonant tunneling junction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103755
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    Paper (German National Licenses)
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  • 5
    Electronic Resource
    Electronic Resource
    Line shape of the optical dielectric function (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1176-1178 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A systematic study of the optical dielectric function by spectroscopic ellipsometry and electroreflectance has shown that the proper functional form for the Green's function for an electron-hole pair in GaAs or CdTe is primarily Gaussian, not Lorentzian as is commonly assumed, although it is primarily Lorentzian for Hg1−xCdxTe. The Lorentzian part of the broadening is shown to measure the alloy, impurity, and defect scattering.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99641
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  • 6
    Electronic Resource
    Electronic Resource
    Study of mercury cadmium telluride epilayers grown by metalorganic vapor-phase epitaxy (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 2014-2017 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the growth and characterization of HgCdTe epilayers grown by metalorganic vapor-phase epitaxy. The transport properties indicate that it is possible to grow epilayers with mobilities comparable to those of the best bulk-grown materials. Electrolyte electroreflectance studies have yielded depth profiles for the alloy composition, the strains, and the density of polarizable defects. These latter results indicate very clearly that the interface alloy/substrate is very sharp and does not extend over more than 2000 A(ring). Moreover, in the bulk of the epilayers the strains are low and comparable to those found in high-quality bulk single crystals.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334388
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    Paper (German National Licenses)
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  • 7
    Electronic Resource
    Electronic Resource
    Reactive sputtering of polyphosphide thin films by plasma cracking of P4 (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 332-336 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: For the first time, we are reporting on the sputter deposition of amorphous-polyphosphide thin films from a compound target. We demonstrated that the growth rate of this compound semiconductor is determined by the metal flux, and the stoichiometry is determined by the phosphorus flux. The amount of excess phosphorus required to maintain the stoichiometry of the growing film was calculated. A new technique was used to provide the excess phosphorus, namely the generation of reactive phosphorus (P) species from P4 molecules injected into the plasma via an Ar carrier from an external P4 delivery system. The sticking coefficient of K is found to be independent of substrate temperature while that of the P species changes from 1 at 23 °C to 0.25 at 250 °C. The plasma-cracking efficiency is measured to be almost 100%. The effect of plasma on the P4 chemistry has implications for polyphosphide deposition and for the growth of other compound semiconductors containing Group V elements.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336279
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    Paper (German National Licenses)
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