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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 5634-5636 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: SmCo based films containing 20 at. % Fe and with Sm varying from 15.5 to 17 at. % have been synthesized to show the transition from ordered CaCu5 to disordered TbCu7 phase. For either phase, the demagnetization energy present during deposition can result in films with the crystallite c axes randomly splayed onto the film plane. It has been possible to synthesize the high anisotropy CaCu5 phase with either a (200) or (110) texture by adjusting the sputtering parameters to correspond to either a relatively high or relatively low surface mobility during the film deposition. It has been possible to synthesize ordered CaCu5 type films with very low values of BR(⊥)/BR((parallel))=0.042. Previously, SmCo based single phase TbCu7 structure films have been synthesized with close to the usual high energy product 2–17 compositions of nominally 7 at. % Cu and 2 at. % Zr. The films have been characterized by vibrating-sample magnetometer and superconducting quantum interference device magnetometry, x-ray diffraction, and scanning electron microscope measurements for composition and film morphology. The films have been directly crystallized onto heated substrates so that the crystallite c axes are predominantly randomly aligned in the film plane. The crystal structures observed could be switched from the ordered CaCu5 to the disordered TbCu7 phase for small variations in the Sm concentrations. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 5425-5427 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pulsed laser deposition using bulk NiOFe2O3 targets onto heated substrates has been used to synthesize single phase Ni spinel ferrite films onto various substrates. Flowing oxygen has been used during the deposition to maintain the oxygen stoichiometry. Ni ferrite films have been deposited onto C-, R-, and A-plane sapphire, polycrystalline Al2O3, and fused silica. Single-crystal (111) oriented NiOFe2O3 films have been made onto C-plane sapphire for substrate temperatures of greater than 900 °C. Polycrystalline highly (400) textured Ni ferrite films have been made onto R-plane sapphire with I(400)/I(311)=6.15. Films made onto A-plane sapphire, polycrystalline alumina, and fused silica showed only moderate texturing. The coercive force of the (111) oriented NiOFe2O3 was 120 Oe perpendicular to the film plane and 95 Oe in plane. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Highly aligned film samples of ThMn12-type NdFe12−y−zCoyMoz, y+z≈1, have been directly crystallized onto heated substrates by rf sputtering. The deposited films have then been nitrided at different nitriding pressures and temperatures to determine the optimum conditions to maximize the coercivity. The films have generally been (002) textured so that the easy axis of magnetization of the nitrided films is perpendicular to the film surface. For low Co concentrations it has been possible to enhance the saturation flux densities, the coercivity, and the anisotropy field of the nitrided samples. Maximum room temperature coercivities and anisotropies of 11.3 and 145 kOe were obtained for a ThMn12-type Nd8.9Fe80.3Co6.0Mo4.8N (002) textured film sample. At lower temperatures the coercivity and anisotropy rose smoothly to 29.5 and ≈200 kOe respectively by 10 K. Based on nitriding studies on similar films, all nitride sites should be occupied at ≈1 N per ThMn12 formula unit for the high coercivity films. Previously NdFe11Co0.5Mo0.5N films were reported with a room temperature BHmax=46.3 MGOe at 293 K and 59.6 MGOe at 10 K. In general, films that have been made to exhibit a gradient in any one component have exhibited lower energy products due to either a reduced coercivity or to shouldered hysteresis loops.
    Type of Medium: Electronic Resource
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  • 4
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single phase TbCu7 type films of Sm(CoFeCuZr) have been sputter synthesized for a range of sputter gas pressure, deposition temperature, and two different gas species: Ar and Ar50%Xe. The magnetic and crystallographic properties of these films as a function of sputter deposition parameters have been studied. Films synthesized at temperatures near their crystallization temperatures at sputter gas pressures exceeding 60 mTorr of Ar50%Xe, had a strong c-axis in-plane texture. The remanent magnetization ratio for measurement perpendicular to the film plane versus in plane was close to zero for such films. X-ray diffraction patterns of these films showed only (hk0) type reflections. At gas pressures around 30 mTorr predominant reflection was (111) type. The perpendicular to the in-plane BR ratio for such films was around 0.55. For films with in-plane c-axis texture, in-plane Br of 9.0 kGauss and coercivities in the range 3–10 kOe were possible. Pressures of Ar and Ar50%Xe correlated roughly in the ratio 1:2 for the synthesis of films, with comparable crystallographic and magnetic properties.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 6009-6011 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Highly aligned sputtered film samples of ThMn12-type NdFe12−y−z CoyMozN, y+z≈1, have been synthesized. For low Co concentrations it has been possible to enhance the saturation flux densities, the coercivity, and the anisotropy field of the nitrided samples. Films which have a gradient along the substrate length in the Fe to Co ratio have been synthesized to determine the maximum coercivity and anisotropy values that can be obtained for the Nd(Fe,Co,Mo)12N nitrides. Maximum room temperature coercivities and anisotropies of 11.3 and 145 kOe were obtained for a ThMn12-type Nd8.9Fe80.3Co6.0Mo4.8N (002) textured film sample. At lower temperatures the coercivity and anistropy rose smoothly to 29.5 and ≈200 kOe, respectively by 10 K. Based on nitriding studies on similar films, all nitride sites should be occupied at ≈1 N per ThMn12 formula unit for the high coercivity films reported.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 6006-6008 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Highly aligned (002) textured sputtered films of Pr(Fe12−y−zCoyMoz)Nx, where y=0–2.5, and z=0.4–1.0 compounds have been successfully synthesized. Before nitriding, the films exhibited nonuniaxial soft magnetic properties with room temperature coercivities of 0.70 kOe. A profound change of magnetocrystalline anisotropy occurred on nitriding. X-ray diffraction traces showed that the ThMn12-type tetragonal structure was retained with a saturating increase in cell volume over the first 15 min of nitriding time at 750 K. The coercivity, however, reached a maximum for a nitriding time of 25 min at 750 K. Samples nitrided for times greater than ≈25 min were taken as fully nitrided with ≈1 N per ThMn12 formula unit. The samples slightly richer in Pr showed somewhat higher coercivity perpendicular to the film plane as compared to stochiometric Pr(Fe,Co,Mo)12N films. From high field measurements to 80 kOe, the maximum room temperature coercivity perpendicular to the film plane was 9.4 kOe, which rose to 22.0 kOe at 10 K. The 4πMs value at 80 kOe measured perpendicular to the film plane was 11.6±0.5 kG at 293 K, 12.5 kG at 10 K, for Pr1.04Fe10.36Co1.16Mo0.44N samples, and 10.5±0.5 kG at 293 K for Pr1.05Fe11.17Mo0.78N samples. After high field magnetization to 80 kOe, for measurements perpendicular to the film plane, the static energy product was 23.6 and 32.9 MG Oe at 293 and 10 K, respectively. The estimated anisotropy fields were 96 and 144 kOe at 293 and 10 K, respectively, for low cobalt film samples.
    Type of Medium: Electronic Resource
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  • 7
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Highly textured thin films, of ordered Nd(Fe,T)12, T=Ti, Mo, and disordered Nd(Fe,Ti)7 phases, were synthesized by rf sputter deposition. The 1–12 films were highly (002) textured with the c axes oriented perpendicular to the film plane. The disordered Nd-Fe-Ti films were fitted to the disordered TbCu7 phase and could be made highly (110) textured with the c axes randomly distributed in the film plane. Nitriding was carried out in N2 at P=400 Torr at ≈450 °C for 2 h. The room-temperature magnetocrystalline anisotropy fields of the NdFe11Ti and NdFe11Mo films, which were uniaxial, were 10 and 5 kOe, respectively. After nitriding the NdFe11TNx films remained uniaxial, but the anistropy fields increased to 108 and 130 kOe for Ti and Mo, respectively. The iHc perpendicular to the film plane of NdFe11T increased to 5.3 kOe, T=Ti, and to 7.2 kOe, T=Mo, after nitriding. At 293 K, the highest-energy product of 30.2 MGOe was obtained for a T=Mo nitrided sample. The hysteresis loops of disordered Nd(Fe,Ti)7 and Nd(Fe,Ti)7Nx films, measured in the film plane and perpendicular to the film plane, showed that the disordered 1–7 phase was a conical system and that the cone angle increased after nitriding. Thin films of the disordered 1–7 phase were also synthesized with Nd replaced by Sm and these directly crystallized disordered Sm(Fe,Ti)7 films were highly (200) textured with the c axes randomly distributed in the film plane. As observed for the disordered Nd(Fe,Ti)7 phase, hysteresis loops of disordered Sm(Fe,Ti)7 and Sm(Fe,Ti)7Nx showed a change in cone angle after nitriding and, in this case, the cone angle decreased.
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 6023-6025 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High coercivity film samples of the ordered Sm2Fe17Nx phase with intrinsic coercivities, iHc, up to 23 kOe at 293 K, and 35 kOe at 10 K, were synthesized by rf sputtering. Random orientation Sm2Fe17 films were formed by the subsequent crystallization of originally amorphous deposits. The iHc of the original Sm2Fe17 films was 0.75 kOe at 293 K. X-ray diffractometer traces from 2aitch-theta=28° to 73°, CuKα, exhibited 14 lines. Before nitriding all 14 lines were fit to the 2–17 rhombohedral structure with a=8.555 A(ring), c=12.445 A(ring), with a weighted root-mean-square deviation in 2aitch-theta of 0.01°. After nitriding the cell volume increase was ≈7%. Nitriding of the ordered 2–17 films had to be performed in a very narrow temperature range to optimize the magnetic properties. The best magnetic properties were obtained by crystallizing the amorphous deposits in situ at a temperature of ≈900 K for 1 h and then subsequently nitriding in N2 gas at 0.75 atm., at 675–725 K, for 2 h. The room temperature coercivity as a function of the Sm concentration reached a maximum value of ≈23 kOe at a slightly richer than stoichiometric Sm composition.
    Type of Medium: Electronic Resource
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  • 9
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Measurements of the polar Kerr rotation and optical coercivity as a function of photon energy have been made on ≈2 μm thick ThMn12-type crystalline sputtered films of Sm(Fe,Ti)12. The optical coercivity for a Ti containing (222) textured film was 3.10 kOe at a photon energy of 1.25 eV, 2.96 kOe at 1.84 eV, and 2.92 kOe at 2.45 eV. The optical coercivity for a similar composition (002) textured Sm(Fe,Ti)12 film was relatively constant at 1.24 kOe. These samples were measured in air at 300 K without any protective overcoating. The polar Kerr rotation observed for these crystalline films versus the photon energy paralleled that observed for pure Fe. The magnetometer and optical coercivities for the (222) textured Sm(Fe,Ti)12 films were 1.5 and 2.5 times as large, respectively, as for similar composition (002) textured films. Differences in grain sizes incorporated during the direct synthesis of the films onto heated substrates are needed to account for the large differences observed in the coercivities for the (222) versus (002) textured films.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 4801-4803 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Highly textured Li-ferrite films have been synthesized by pulsed laser deposition from bulk targets onto c-plane sapphire substrates. For substrate temperatures approaching 1000 °C the growth mode was predominantly (333). A similar growth mode was recently reported for Ni-ferrite films grown onto c-plane sapphire substrates. The films were 4–8 μm thick and were grown at deposition rates of 3–5 Å/s at oxygen partial pressures of 200–400 mTorr. Magnetic measurements were made by SQUID and 9.5 GHz ferromagnetic resonance (FMR) on the as deposited films. Textured Li-ferrite films with x-ray diffractometer intensity ratios of I(333)/I(311)=10.3 for films made in 200 mTorr oxygen and 14.5 for films made in 400 mTorr oxygen exhibited room temperature in-plane intrinsic coercivities of 〈100 Oe for SQUID magnetometer measurements. Highly (333) textured Li-ferrite films made in 400 mTorr oxygen exhibited clean symmetric FMR absorption lines with a derivative peak-to-peak linewidth of 335 Oe for the in-plane static field configuration. The FMR profiles for the perpendicular-to-plane field configuration were highly distorted. The magnetization versus field measurements and the in-plane FMR field position yielded saturation flux density 4πMs and effective saturation flux density 4πMeff values of 3.6–4.0 kG and 3.56–3.70 kG, respectively. These values are in the same range as for bulk Li-ferrite. The in-plane FMR linewidths were significantly larger than expected for bulk single crystals or large grain size, dense polycrystals. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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