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  • 1
    Electronic Resource
    Electronic Resource
    Properties of SiGe oxides grown in a microwave oxygen plasma (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 6135-6140 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin oxide on strained Si1−xGex surface has been grown using a nonelectron cyclotron resonance mode microwave plasma at low temperatures (150–200 °C). An optimized post-oxidation and post-metal annealing cycle has resulted in very low fixed oxide charge density (1.78×1010/cm2) and moderately low interface trap density (2.9×1011/cm2 eV). A controlled in situ hydrogen-plasma treatment to Si1−xGex has been found to be useful in improving the electrical properties of the oxide. The high electron injection phenomena of metal oxide semiconductor capacitors has been used for charge trapping studies of sites normally present in the SiGe oxides. From the position and the extent of current ledge observed as a function of ramped gate voltage, the capture cross section and the total number of traps have been determined. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360556
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  • 2
    Electronic Resource
    Electronic Resource
    Electron beam deposited lead-lanthanum-zirconate-titanate thin films for silicon based device applications (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 1008-1012 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A simple single-source electron-beam evaporation technique has been used for the deposition of lead-lanthanum-zirconate-titanate (PLZT) thin films for silicon-based device applications. An optimized annealing condition has been established for the formation of crystalline perovskite phases. The effect of the bottom electrodes and the barrier layer on the growth of the films has been studied. Films with good dielectric and optical properties have been obtained under opt- imized conditions. Electrical properties of the films have been evaluated using metal–insulator–semiconductor and metal–insulator–metal structures. A moderately low interface trap density and very low leakage current density demonstrate the potential of the deposited films for device applications. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360887
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  • 3
    Electronic Resource
    Electronic Resource
    Effect of reactive-ion bombardment on the properties of silicon nitride and oxynitride films deposited by ion-beam sputtering (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 8145-8152 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silicon nitride and oxynitride films of very low hydrogen content have been deposited on silicon at low temperatures (150–200 °C) using ion-beam sputtering. A dual-ion-beam sputtering technique, making simultaneous use of an energetic argon-ion beam to sputter silicon nitride from a target and a low-energy oxygen or nitrogen ion beam to react with the sputtered films on the substrate, has been employed to control the composition of the films. A precise control of film composition independent of deposition rate has been achieved through the control of oxygen/nitrogen ion-beam parameters and gas flow ratios. The films have been characterized by the measurement and study of refractive index, chemical etch rate, infrared absorption, and x-ray photoelectron spectra. A direct correlation between film properties with oxygen content has been obtained for silicon oxynitride films. The electrical properties have been studied by the measurement of the characteristics of metal-insulator-semiconductor capacitors fabricated using the deposited films. In situ ion-beam oxidation of silicon prior to the oxynitride deposition has resulted in a film with a low insulator charge number density (3.5×1011 cm−2) and interface trap density (4×1011 cm−2 eV−1), which is suitable for device applications.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357027
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  • 4
    Electronic Resource
    Electronic Resource
    First trimester threatened miscarriage treatment with human chorionic gonadotrophins: a randomised controlled trial (2005)
    Oxford, UK and Malden, USA : Blackwell Science Ltd
    BJOG 112 (2005), S. 0 
    Details
    ISSN: 1471-0528
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Objective  To determine whether administration of exogenous human chorionic gonadotrophin (hCG) treatment improve the pregnancy outcome in first trimester threatened miscarriages.Design  A prospective, double blind, randomised, placebo-controlled trial.Setting  The Early Pregnancy Assessment Unit, Royal Bolton Hospital, Bolton, United Kingdom.Population  One hundred and eighty-three women with vaginal bleeding and a viable fetus seen on ultrasound scan (USS) in the first 12 weeks of pregnancy.Methods  The patients were randomised to receive either hCG or placebo treatment until 14 weeks of gestation.Main outcome measures  The primary objective of the trial was to determine the miscarriage rate in the hCG arm compared from the placebo arm.Results  Of the 183 cases, 87 were randomised to treatment with hCG while 96 were randomised to receive a placebo. Forty-seven (25%) did not comply with the study protocol. The mean [SD] gestational age at presentation was 7 [1.33] weeks. The mean [SD] age of women in study was 27 [5] years in the placebo and 28 [5] in the hCG group. The mean body mass index (kg/m2) was 25 [5] in the study. The number of patients actively bleeding per vaginum at presentation was 85 (93%) in placebo group and 79 (96%) in the hCG group. The median number of hCG or placebo injections for both groups was 7. Ten women (11%) in the placebo group proceeded to have a complete miscarriage, as did 10 women (12%) in the hCG group, relative risk (RR) [95% confidence interval (CI)] of 1.1 (0.63–1.6).Conclusion  Our study showed no evidence of a difference in the outcome of threatened miscarriages when treated with hCG in the first trimester, this may be because our study sample size was small and follow up was suboptimal. A large, randomised, multicentre trial is still needed to establish the usefulness of hCG treatment in cases of threatened miscarriage.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1471-0528.2005.00750.x
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  • 5
    Electronic Resource
    Electronic Resource
    Thermodynamics of Microemulsion Formation. 2. Enthalpy of Solution of Water in Binary Mixtures of Aerosol OT and Heptane and Heat Capacity of the Resulting Systems (1994)
    s.l. : American Chemical Society
    Langmuir 10 (1994), S. 2507-2510 
    Details
    ISSN: 1520-5827
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/la00020a004
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  • 6
    Electronic Resource
    Electronic Resource
    Gd2O3, Ga2O3(Gd2O3), Y2O3, and Ga2O3, as high-k gate dielectrics on SiGe: A comparative study (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 4103-4107 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a comparative study of the electrical properties of some oxides e.g., Gd2O3, Ga2O3(Gd2O3), Y2O3, and Ga2O3 as gate dielectric for strained Si0.74Ge0.26 metal–oxide–semiconductor devices. Secondary ion mass spectroscopy spectra of the Ga2O3(Gd2O3)/SiGe sample showed a significant amount of GaO and GdO along with Ga and Gd signals. The depth profile taken for O, Si, SiO, Ga, Ge, Gd, and GdO showed sharp interface at about 20 nm. Though Gd2O3 and Y2O3 showed the highest resistivity and breakdown strength, Ga2O3(Gd2O3) was found to be most effective for surface passivation of SiGe giving lowest interface state density while pure Ga2O3 was incapable of passivating the SiGe surface. The positive fixed oxide charge and interface state density for Ga2O3(Gd2O3) film were found to be 8.4×1010 cm−2 and 4.8×1011 eV−1 cm−2, respectively, which are the lowest among all the oxide films of the present study. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1405134
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  • 7
    Electronic Resource
    Electronic Resource
    Hole diffusion at the recombination junction of thin film tandem solar cells and its effect on the illuminated current–voltage characteristic (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 2853-2861 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Computer simulation of experimental current density–voltage (J–V) and quantum efficiency characteristics of thin film p1-i1-n1-p2 structures and of double junction solar cells (p1-i1-n1-p2-i2-n2), has been used to understand the hole transport mechanisms near the np "tunnel" junction between two subcells of a multijunction structure. Two different types of p layers at the junction have been studied: (i) hydrogenated microcrystalline silicon (μc-Si:H) and (ii) hydrogenated amorphous silicon carbide (a-SiC:H). There is a striking difference between the experimental J–V characteristics for the p1-i1-n1-p2 structures, with case (i) having a fairly high fill factor (FF) and conversion efficiency (η), as against a very low FF and η in case (ii). Although the difference is much smaller for double junction cells employing these two types of materials as the p layer at the junction, the fill factor of the cell employing μc-Si:H is about 8% higher. Analysis of transport properties as a function of position by computer modeling reveals that the main difference in behavior between the two cases is due to the much higher free hole population in the p layer at the junction when it is microcrystalline; which in turn, is a direct consequence of the lower activation energy for this case. We also learn that not only tunneling and the electric field in the bottom subcell, but also diffusion, plays a major role in pushing the holes produced in it by the incident light towards the recombination layer at the junction; and thereby helps improve cell performance, especially its fill factor. We conclude that the p layer at the junction should have a high free hole density (low activation energy in the device), to attain an overall high fill factor and conversion efficiency. Another interesting inference is the fact that tunneling as transport mechanism for holes towards the junction is more important when the p layer at the junction is a-SiC:H than when it is microcrystalline, while diffusion plays a more prominent role in propelling holes towards the junction in the latter case. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1287115
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  • 8
    Electronic Resource
    Electronic Resource
    Hall mobilities in B-doped strained Si1−xGex and Si1−x−yGexCy layers grown by ultrahigh vacuum chemical vapor deposition (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 2039-2042 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hall mobilities in a temperature range of 80–300 K have been measured in fully strained Si1−xGex and partially strain-compensated p-type Si1−x−yGexCy alloy layers grown on Si (100) by ultrahigh vacuum chemical vapor deposition. The effect of the addition of C on strain compensation of Si1−xGex films has been studied by high-resolution x-ray diffraction analysis. The Hall hole mobility is found to increase with decreasing compensative strain or effective Ge content in the layer throughout the studied temperature range. The effect of a Si-cap layer on the hole mobility of Si1−x−yGexCy film has been investigated. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1305927
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  • 9
    Electronic Resource
    Electronic Resource
    Fluorine-enhanced nitridation of silicon at low temperatures in a microwave plasma (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 1874-1876 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A microwave plasma discharge at very low temperatures (200–250 °C) has been used for the growth of thin silicon oxynitride films suitable for gate dielectric applications. The addition of CHF3 as a source of fluorine enhances the growth rate. A x-ray photoelectron spectroscopy study indicates the incorporation of fluorine (F/Si(approximately-equal-to)0.2) in the film. Electrical properties of the grown layers have been evaluated by the characterization of metal-insulator-semiconductor capacitors. Results have indicated the presence of negative charges in the insulator. The estimated charge density is lowest for the fluorinated film. The conduction mechanism in the films at room temperature appears to be Frenkel–Poole type.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349512
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  • 10
    Electronic Resource
    Electronic Resource
    Deposition of composition-controlled silicon oxynitride films by dual ion beam sputtering (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2476-2478 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silicon oxynitride films of controlled composition have been deposited on silicon by dual ion beam sputtering (DIBS) making simultaneous use of an energetic argon ion beam to sputter silicon nitride from a target and a low-energy oxygen ion beam to react with the sputtered film on the substrate. The correspondence between film properties and oxygen beam parameters has been studied from measurements of refractive index, chemical etch rate, infrared absorption, and x-ray photoelectron spectroscopy spectra. In situ ion beam oxidation of silicon prior to oxynitride deposition results in a film with a low insulator charge density (3.5×1011 cm−2) and interface trap density (4×1011 cm−2 eV−1).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104848
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