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  • 1
    Electronic Resource
    Electronic Resource
    Pulsed laser-induced melting followed by quenching of silicon films (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6592-6598 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphization and crystallization were studied through laser-induced melting of silicon films formed on quartz substrates induced by irradiation with a 30 ns XeCl excimer laser. Homogeneous and rapid solidification occurs and amorphous solid state can be formed when the melt duration is long enough to make the temperature gradient in liquid silicon lower than 1×105 K/cm at the Si/quartz interface. The solid state after homogeneous solidification is governed by recalescence caused by latent heat released at solidification. A completely amorphous state is formed when film thickness is thinner than 24 nm because latent heat reduces as film thickness decreases. Both crystalline and amorphous states were observed for film thickness above 24 nm because recalescence can cause crystalline grain growth. Complete crystallization occurs through interface controlled growth when the temperature gradient is higher than 1×105 K/cm. The velocity of liquid/solid interface is 0.6 m/s, which is too low to cause amorphization.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355097
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  • 2
    Electronic Resource
    Electronic Resource
    Pulsed laser-induced amorphization of silicon films (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 1281-1289 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The reversible transition from crystalline to amorphous silicon was observed on films deposited on quartz substrates through laser-induced melting using a 30-ns pulsed XeCl excimer laser. A 20-nm-thick silicon film was completely melted and then amorphized. The melt duration exceeded 70 ns when the film was amorphized. The transition from liquid to the amorphous state would occur homogeneously throughout the film because the temperature gradient in molten silicon could be reduced to 1.0×105 K/cm (0.2 K/20 nm) at 70 ns after initiation of melt. The laser-amorphized film had a large mid-gap density of states of 5.3×1019 cm−3 eV−1. The density of states was remarkably reduced using a hydrogen plasma treatment at 250 °C for only 1 min. Thin-film transistors fabricated in a laser-amorphized film showed good characteristics with a carrier mobility of 0.6 cm2/V s after hydrogenation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349584
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  • 3
    Electronic Resource
    Electronic Resource
    Rapid crystallization of silicon films using electrical-current-induced joule heating (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 5362-5367 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Melt-regrowth properties of 60-nm-thick silicon films were characterized in the case of electrical-current-induced joule heating. The electrical energy accumulated at a capacitance caused melting of the silicon films via joule heating with a maximum intensity at 1.5×106 W/cm2. The melt-regrowth duration increased from 6 to 75 μs as the capacitance increased to 0.05–1.5 μF. Crystalline properties of the silicon films were also investigated. 7 μm long crystalline grains with the (110) preferential crystalline orientation were observed using a transmission electron microscope. The tensile stress at 3.4×108 Pa remained in the films. The analysis of electrical conductivity resulted in a density of defect states of 3.5×1016 cm−3 in the films. The product of the generation efficiency, the carrier mobility and the average carrier lifetime was estimated to be ∼10−3 cm2/V. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1367405
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  • 4
    Electronic Resource
    Electronic Resource
    Reduction of defects in laser-induced crystallized and amorphized silicon films using plasma hydrogenation (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7377-7383 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Plasma hydrogenation of laser-crystallized and -amorphized films was investigated. The hydrogen concentration was determined to be 1.5 at. % using a method of laser-induced hydrogen effusion for 20-nm-thick crystallized films which were hydrogenated at 250 °C for 30 s. The defect density was reduced from 1×1017 to 4×1016 cm−3. The hydrogen concentration was 2.5 at. % for amorphized films of 12 nm-thickness. This low hydrogen concentration resulted in a low optical band-gap energy of 1.7 eV for amorphized films, while the width of the Urbach tail was 0.06±0.005 eV, which is close to that of hydrogenated amorphous silicon (a-Si:H) films fabricated using radio-frequency glow discharge (rf GD). The defect density of the laser-amorphized silicon films was reduced from 2×1020 to 4×1015 cm−3 eV−1 comparable to a-Si:H films fabricated by rf GD. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357962
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  • 5
    Electronic Resource
    Electronic Resource
    Laser-induced melting of predeposited impurity doping technique used to fabricate shallow junctions (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 711-713 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Shallow p+ junctions have been fabricated using a new technique in which doping is accomplished by depositing boron film on a silicon surface by radio-frequency glow discharge (rf-GD) and melting locally with a pulsed XeCl excimer laser. Sheet resistivity as low as 15 Ω/(D'Alembertian) was obtained by irradiation of a single laser pulse. The junction depth was 0.07–0.3 μm, depending on the laser energy density. Electrical characteristics of p+-n junctions which were formed by the laser doping technique subsequently subjected to a 400 °C, 1-h furnace anneal show essentially ideal diode behavior with an ideality factor of 1.03.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339747
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  • 6
    Electronic Resource
    Electronic Resource
    SiO2 formation by thermal evaporation of SiO in oxygen atmosphere used to fabrication of high performance polycrystalline silicon thin film transistors (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1018-1020 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A reactive evaporation of SiO in an oxygen atmosphere was investigated for forming a good interface of SiO2/Si. SiO2 films are formed at room temperature by evaporation of a SiO powder in an oxygen atmosphere with a flow rate of 2 sccm at a pressure of 1×10−4 Torr. The interface trapping density at SiO2/Si was lower than 5×1010 cm−2 eV−1. n- and p-channel Al-gate polycrystalline silicon thin film transistors (poly-Si TFTs) were fabricated at 270 °C with the present SiO2 films as a gate oxide and laser crystallized poly-Si films formed using a pulsed XeCl excimer laser. They showed good characteristics of a low threshold voltage of 1.1 V (n-channel) and −1.2 V (p-channel), and a high carrier mobility of 450 cm2/V s (n-channel) and 270 cm2/V s (p-channel).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110956
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  • 7
    Electronic Resource
    Electronic Resource
    A new technique for diagnostics of a radio-frequency parallel-plate remote plasma (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 162-164 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new parallel-plate remote plasma reactor was developed, containing a metal grid between the powered and the grounded electrode. Plasma parameters between the grid and a substrate holder have been measured in radio-frequency (13.56 MHz) argon plasmas using another grid with large surface area as a positive electrostatic probe. The electron density is lower than 106 cm−3 at rf power lower than 10 W; this demonstrates that the plasma is effectively confined. The electron energy distribution function is well approximated to a Maxwellian one. The electron temperature decreases as the pressure increases, and it is lower than 3 eV at pressures above 13.3 Pa, in agreement with electron temperatures in conventional plasmas.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112659
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  • 8
    Electronic Resource
    Electronic Resource
    Improvement of SiO2/Si interface by low-temperature annealing in wet atmosphere (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2107-2109 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A postannealing technique was developed in order to improve the quality of SiO2 films formed by a parallel-plate remote plasma chemical vapor deposition. The wave number of the antisymmetric stretching mode of Si–O–Si bonding in the SiO2 film increased from 1058 to 1069 cm−1 by an annealing in H2O vapor at 270 °C. It was estimated that averaged bonding angle of Si–O–Si was widened from 137.8° to 141.0°. The annealing in the H2O vapor ambient at 270 °C for 30 min efficiently reduced the interface trap density to 2.0×1010 cm−2 eV−1 and the effective oxide charges density from 7×1011 to 5×109 cm−2 for a metal-oxide-semiconductor (MOS) diode using the SiO2 film. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113918
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  • 9
    Electronic Resource
    Electronic Resource
    Mechanism of pulsed laser-induced amorphization of silicon films (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2724-2726 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphization and crystallization were studied through homogeneous solidification of molten silicon layers on quartz substrates induced by irradiation with a 30 ns XeCl excimer laser. The crystalline nucleation rate was obtained to be 8×1030 m−3 s−1. Silicon films were completely amorphized for films thinner than 18 nm due to the fact that grain growth is reduced as film thickness decreases. It was also experimentally determined that recalescence caused by latent heat released at solidification can cause grain growth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105896
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  • 10
    Electronic Resource
    Electronic Resource
    Rapid thermal annealing using the combustion of H2 with N2O (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1205-1207 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The combustion of H2 gas with N2O gas was investigated in order to rapidly heat substrate to a high temperature. A transient thermometry with a 100-nm-thick Cr film as a temperature sensor formed on quartz substrate was used to measure temperature change at the surface. The gas combustion was induced by heating a W filament. It propagated with a velocity higher than 100 m/s throughout a chamber for an initial total gas pressure of 500 Torr ([H2]/[N2O]=1). The sample surface is heated to 800 °C for an initial substrate temperature at 300 °C. The full heating time width at half maximum was 4.5 ms. This letter shows a possibility of millisecond-order rapid thermal treatment. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117412
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