Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
64 (1994), S. 1018-1020
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A reactive evaporation of SiO in an oxygen atmosphere was investigated for forming a good interface of SiO2/Si. SiO2 films are formed at room temperature by evaporation of a SiO powder in an oxygen atmosphere with a flow rate of 2 sccm at a pressure of 1×10−4 Torr. The interface trapping density at SiO2/Si was lower than 5×1010 cm−2 eV−1. n- and p-channel Al-gate polycrystalline silicon thin film transistors (poly-Si TFTs) were fabricated at 270 °C with the present SiO2 films as a gate oxide and laser crystallized poly-Si films formed using a pulsed XeCl excimer laser. They showed good characteristics of a low threshold voltage of 1.1 V (n-channel) and −1.2 V (p-channel), and a high carrier mobility of 450 cm2/V s (n-channel) and 270 cm2/V s (p-channel).
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.110956
Library |
Location |
Call Number |
Volume/Issue/Year |
Availability |