ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Epitaxial InAs/GaAs, GaAs/Ge/Si, GaAs/InP, and InAs/InP heterostructures are grown by molecular-beam epitaxy. Transmission electron microscopy studies reveal that, for these heteroepitaxial systems, the threading dislocation density is inversely proportional to the epilayer thickness. At a given thickness, the threading dislocation density is relatively insensitive to lattice mismatch (3.2%〈||Δa||/a〈7.2%), to differences in thermal expansion coefficients (6.9×10−7〈||Δα||〈3.4×10−6 K−1), to interfacial surface chemistry, and to epilayer morphology. Epitaxial layers incorporating growth interrupts produce lower overall defect densities, yet they maintain defect-reduction profiles similar to those observed in layers without the growth interrupt.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.340343
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