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  • 1
    Electronic Resource
    Electronic Resource
    In situ electrical characterization of dielectric thin films directly exposed to plasma vacuum-ultraviolet radiation (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 1742-1746 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this article we report a method for in situ electrical characterization of dielectric thin films under direct exposure to plasma in an electron-cyclotron-resonance etcher. This method is based on the development of a special test structure that allows for the measurement of the influence of plasma vacuum-ultraviolet (VUV) radiation on the electrical conductivity of thin dielectric layers. Results show that the measured conductivity of SiO2 layers temporarily increases during exposure to argon and oxygen plasmas, with controlled VUV emission. Based on the measurements made through this method, a model of the VUV-induced conductivity of SiO2 is developed. These measurements are very important for plasma processing of semiconductor devices, because the temporary increase in the conductivity of these layers upon exposure to processing plasmas can decrease the plasma-induced charging of these dielectric layers depending on the intensity of the plasma VUV emission. This can have an impact on the properties and reliability of processed devices. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1305836
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  • 2
    Electronic Resource
    Electronic Resource
    Measurement of ion flows using an "unmagnetized'' Mach probe in the interchangeable module stellarator (1994)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 65 (1994), S. 2599-2606 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A Mach probe is used to measure poloidal and toroidal flows induced by a biased electrode in IMS. Mach probe theories are reviewed and classified as either magnetized or unmagnetized. A simple geometric model of the IMS Mach probe shows that the variation of the effective probe area as a function of the probe orientation with respect to the magnetic field is 20%–25%, predicting the probe to be only slightly magnetized. Measurements of the variation in the total ion saturation current collected by the probe, as the angle with respect to the magnetic field is varied, demonstrate this level of magnetization only at low neutral pressure at large minor radius, while in other cases the variation in the total collected current is negligible. Based on this result an unmagnetized model [M. Hudis and L. M. Lidsky, J. Appl. Phys. 41, 5011 (1970)] is chosen to analyze the IMS Mach probe data. Comparison of Mach probe poloidal flow measurements as a function of minor radius to calculations of the E×B drift velocity and the ion diamagnetic drift velocity from radial profiles of floating potential and ion saturation current, respectively, shows agreement to within 15%.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1144658
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  • 3
    Electronic Resource
    Electronic Resource
    Gridless ionized metal flux fraction measurement tool for use in ionized physical vapor deposition studies (1999)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 70 (1999), S. 1525-1529 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Ionized physical vapor deposition is a technique for sputtering metal into small trenches, by ionizing sputtered metal atoms so that their trajectories can be controlled by electric fields. To this date no one has quantified exactly what fraction of the metal vapor is ionized, although the trends of how ionization varies with input parameters is known. This article describes and demonstrates a new quartz crystal microbalance design, which can be used to measure the ionized metal flux fraction arriving at the substrate location. Instead of using grids to repel ions as similar devices do, this analyzer works by applying a voltage bias to the front surface of the crystal in order to repel ions. A magnetic field adjacent to the face limits electron current to the microbalance, minimizing its perturbation of the plasma. The measurement tool described in this article does not suffer from complications caused by placing grids in front of the monitor and is an attractive method for characterizing ionized physical vapor deposition systems. Ion and neutral metal fluxes as a function of ionizer power are presented for an argon/copper discharge. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1149618
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  • 4
    Electronic Resource
    Electronic Resource
    A two-dimensional particle-in-cell simulation of an electron-cyclotron-resonance etching tool (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2270-2278 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A particle-in-cell (PIC) simulation of an axisymmetric electron-cyclotron-resonance (ECR) etching tool is developed in which up to 2×106 particles per species are loaded in a two-dimensional spatial computational mesh (r,z), along with three velocity components (vr,vθ,vz). An ECR heating scheme based on single-particle trajectories in the resonance zone generates the simulated plasma. Electron- and ion-neutral elastic and inelastic collisions are treated by a null Monte Carlo collision method. The code generates the electron and ion-velocity distributions, plasma potentials, and densities in a CF+3/CF4 etching plasma. In addition, a novel scaling technique which bridges the gap between the ion and electron-time scales and accelerates the rate of convergence of the code is introduced for a PIC code. The predictions of the code show that microwaves are completely absorbed before reaching the exact location of resonance. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360144
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  • 5
    Electronic Resource
    Electronic Resource
    Plasma vacuum ultraviolet emission in an electron cyclotron resonance etcher (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2599-2601 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This work investigates the vacuum ultraviolet (VUV) emission from various feed gases producing plasmas in an electron cyclotron resonance etcher. Absolute measurements of plasma VUV emission at typical pressures for processing between 0.5 and 5 mTorr, and microwave powers between 700 and 1300 W, show levels of irradiance at the wafer position of the order of tenths of mW/cm2 and integrated photon fluxes in the 1014 photons/cm2 s range. The reported level of VUV emission is sufficient to induce radiation damage in typical metal–oxide–semiconductor devices in the form of flatband voltage shift and inversion of lightly doped substrates. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123909
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  • 6
    Electronic Resource
    Electronic Resource
    Relationship between the charging damage of test structures and the deposited charge on unpatterned wafers exposed to an electron cyclotron resonance plasma (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1143-1145 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The correlation between the nonuniformities of plasma parameters (i.e., floating potential) and the induced charging onto the surface of oxide-covered unpatterned 4 in. Si wafers exposed to O2 electron cyclotron resonance (ECR) plasma is investigated. Wafers covered with a 1000 Å oxide layer were exposed to the ECR plasma under nonuniform conditions, and the induced surface charge was mapped on the wafers using contact potential difference technique. Floating potential profiles were monitored using a Langmuir probe. Experimental data indicate that the magnitude of the surface charge is proportional to the deviation of the floating potential from its surface-averaged potential. These results were compared to location of the damage of metal-oxide-semiconductor capacitor test structures exposed to same plasmas. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120996
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  • 7
    Electronic Resource
    Electronic Resource
    Photoemission and conduction currents in vacuum ultraviolet irradiated aluminum oxide (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 1242-1246 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A temporary increase in the conductivity of aluminum oxide sputter deposited on the surface of aluminum wafers was made by exposure to vacuum ultraviolet (VUV) radiation produced by a synchrotron light source. The oxide was charged, either positively or negatively, by exposure to a nonreactive inductively coupled plasma, under typical plasma processing conditions. We show the dependence of the conductivity on the energy of the incoming radiation, and conclude that only those photons whose energy is above the band gap of the oxide are capable of producing a temporary increase in the conductivity. Two processes, photoemission and enhanced conductivity, create currents flowing across the oxide layer. A circuit model was developed to show the contributions from both processes to the total current. We conclude that VUV radiation may be used to significantly decrease plasma-induced surface charging of dielectrics. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1428790
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  • 8
    Electronic Resource
    Electronic Resource
    Multipoint Thomson scattering measurements in a low-density plasma (1988)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 59 (1988), S. 1998-2001 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A multipoint Thomson scattering apparatus has been constructed to measure electron temperature and density at several spatial locations in a low-density toroidal plasma discharge. A multianode microchannel-plate photomultiplier tube detector is used to provide the multipoint capability of this device. This detector, along with a simple and efficient optical collection system, allows for low-density measurements. Critical for low-density operation is a low stray light level from the laser, which has been achieved through careful design of the laser beam handling optics. The plasma parameters in which this device operates are in a regime where Langmuir probes are the usual diagnostic method. The design of this device is presented, along with electron temperature and density profiles of an electron cyclotron heated plasma in the Interchangeable Module Stellarator. Comparison is made with Langmuir probe measurements of similar discharges. Discrepancies between these methods are seen, and are attributed to plasma perturbations by the probe.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1140065
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  • 9
    Electronic Resource
    Electronic Resource
    X rays in electron-cyclotron-resonance processing plasmas (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2856-2858 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electron-cyclotron-resonance processing plasmas have been shown to produce low-energy x rays. X radiation was detected in nitrogen and CF4 plasmas from energies of 1–17 keV for microwave powers up to 1000 W. The x-ray flux decreased with increasing pressure over the range of 0.5–3.5 mTorr. Temperatures of the hot electrons responsible for creating the x rays were estimated from the slopes of the x-ray spectra and decreased with increasing pressure. The measured x-ray flux decreased substantially when the magnetic field configuration was changed. Measurable x radiation is produced whenever a field line that passes through the cyclotron resonance surface intersects the vacuum chamber walls and/or other solid surfaces inside the source chamber.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106846
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  • 10
    Electronic Resource
    Electronic Resource
    Low-energy separation by implantation of oxygen structures via plasma source ion implantation (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 962-964 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The initial results from an investigation into the feasibility of using plasma source ion implantation (PSII) to produce separation by implantation of oxygen structures in silicon are reported. Oxygen ions are implanted into p-type (111) oriented silicon wafers using a −30 kV acceleration potential and an oxygen plasma at a pressure of 0.2 mTorr. The effects of ion dose and high-voltage pulse width were examined. Some of the implanted wafers were annealed. Both the as-implanted and annealed wafers were examined using secondary-ion-mass spectroscopy and Auger electron spectroscopy. The initial results show that oxygen can be implanted by PSII and suggest that a buried layer of silicon dioxide has been formed in the implanted wafers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112162
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