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  • 1
    Electronic Resource
    Electronic Resource
    Temperature measurement in rapid thermal processing using acoustic techniques (1994)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 65 (1994), S. 974-976 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Acoustic techniques are used to monitor the temperature of silicon wafers during rapid thermal processing from room temperature to 1000 °C with ±5 °C accuracy. Acoustic transducers are mounted at the bases of the quartz pins that hold up the silicon wafer during rapid thermal processing. An electrical pulse applied across a transducer generates an extensional mode acoustic wave guided by the quartz pins. The extensional mode is converted into Lamb waves in the silicon wafer which acts as a plate waveguide. The Lamb waves propagate across the length of the silicon wafer and are converted back into an extensional mode in the opposite pin. The time of flight of the extensional mode in the quartz pins is measured using pulse echo techniques and is subtracted from the total time of flight to obtain the Lamb wave time of flight across the wafer. Because the velocity of Lamb waves in the silicon wafer is systematically affected by temperature, the measurement of the time of flight of the Lamb wave provides the accurate temperature of the silicon wafer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1144929
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    A 3-dimensional model for low-pressure chemical-vapor-deposition step coverage in trenches and circular vias (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 7137-7140 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A general analytical model has been developed to calculate particle transport and spatial step coverage evolution within 2-dimensional and 3-dimensional microelectronic device structures during low-pressure chemical vapor deposition. The model can account for spatially dependent nonunity reactive "sticking probabilities,'' anisotropic source fluxes, and trench "shadowing'' effects. There is no restriction on the initial and evolving shape of the structure. Model results are compared to direct Monte Carlo simulations for step coverage on rectangular trenches, and are found to more accurately describe the observed experimental step coverages during phosphorous-doped silicon dioxide glass film deposition. We present here, for the first time, detailed calculations of step coverage in circular vias for a wide range of reactive sticking probabilities.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349797
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Low-temperature direct nitridation of silicon in nitrogen plasma generated by microwave discharge (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 2416-2419 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Plasma nitridation of silicon has been performed at low temperatures (at ≈500 °C and also lower temperatures) in nitrogen plasma generated by microwave discharge. The effects of various growth parameters such as microwave power, nitrogen gas pressure, anodization current and polarity, growth time and substrate temperature on the thickness, surface morphology, uniformity, composition and stoichiometry, and electrical and physical characteristics of the grown films have been studied. The thickness of the grown films varied between 30 and more than 100 A(ring) depending on the growth conditions. Based on the grazing-angle Rutherford-backscattering data, the grown films were silicon nitride with some oxygen and carbon contamination. A typical breakdown field of ≈10 MV/cm was measured for these films. The preliminary results obtained indicate that these nitride films can be considered as potential candidates for ultrathin gate, tunnel, and dram memory insulators for very large scale integration devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335915
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Backscattered deposition in Ar sputter etch of silicon dioxide (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2294-2296 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Detailed mechanisms of sputter etch of silicon dioxide in argon plasma are studied using a novel test structure. We have found that a significant amount of the sputtered material (up to 50% of the sputter flux) returns, as an isotropic backscattered flux to the wafer. This backscattered flux results in significant deposition that cannot be accounted for by redeposition, i.e., line-of-sight deposition of the sputtered material, alone. A profile simulator is used to demonstrate a new physical model for the Ar sputter-etch process, based on the interaction of three simultaneous processes: (1) sputtering, (2) direct (i.e., line-of-sight) redeposition of sputtered material, and (3) isotropic deposition of sputtered material backscattered from the gas phase. Simulated profiles show good agreement with experimental results on the test structure and a common device structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110508
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    Paper (German National Licenses)
    Fulltext
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