Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Ferroelectric properties of Bi2VO5.5 thin films on LaAlO3 and SiO2/Si substrates with LaNiO3 base electrode (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 1160-1164 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ferroelectric bismuth vanadate Bi2VO5.5 (BVO) thin films have been grown on LaAlO3 (LAO) and SiO2/Si substrates with LaNiO3 (LNO) base electrodes by the pulsed laser deposition technique. The effect of substrate temperature on the ferroelectric properties of BVO thin films, has been studied by depositing the thin films at different temperatures. The BVO thin films grown on LNO/LAO were textured whereas the thin films grown on LNO/SiO2/Si were polycrystalline. The BVO thin films grown at 450 °C exhibited good ferroelectric properties indicating that LNO acts as a good electrode material. The remanent polarization Pr and coercive field Ec obtained for the BVO thin films grown at 450 °C on LNO/LAO and LNO/SiO2/Si were 2.5 μC/cm2, 37 kV/cm and 4.6μC/cm2, 93 kV/cm, respectively. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360351
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Enhanced magnetoresistance in as-deposited oxygen-deficient La0.6Pb0.4MnO3−y thin films (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 6861-6863 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The La0.6Pb0.4MnO3(LPMO) thin films were in situ deposited at different oxygen partial pressure and at a substrate temperature of 630 °C by pulsed laser deposition. The films grown at lower oxygen partial pressures showed an increase in lattice parameter and resistivity and a decrease in the insulator–metal transition temperature as compared to the stoichiometric LPMO thin film grown at 400 mTorr. Further, these oxygen-deficient thin films showed over 70% giant magnetoresistance (GMR) near the insulator–metal transition temperature against the 40% GMR in the case of stoichiometric thin films. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360727
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Ferromagnetic La0.6Pb0.4MnO3 thin films with giant magnetoresistance at 300 K (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 3923-3925 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Highly textured, as-deposited La0.6Pb0.4MnO3 thin films have been grown on LaAlO3 by pulsed laser deposition. The films are ferromagnetic metals below 300 K. Giant negative magnetoresistance of over 40% is observed at 300 K at 6 T.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357404
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Growth and ferroelectric properties of Bi2VO5.5 thin films with metallic LaNiO3 electrodes (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 1898-1900 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Novel ferroelectric bismuth vanadate, Bi2VO5.5 (BVO), thin films have been grown between lattice matched metallic LaNiO3 (LNO) layers deposited on SrTiO3 (STO) by the pulsed laser deposition technique. LNO/BVO/LNO/STO and Au/BVO/LNO/STO trilayer structures exhibited c-oriented (001) growth of BVO. LNO has been found to be a good metallic electrode with sheet resistance ∼20 Ω in addition to aiding c-axis oriented BVO growth. The dielectric constant, εr of LNO/BVO/LNO/STO, at 300 K was about 12. However, when an Au electrode was used on top of BVO/LNO/STO film, it showed a significant improvement in the dielectric constant (εr=123). The ferroelectric properties of BVO thin films have been confirmed by hysteresis behavior with a remnant polarization, Pr=4.6×10−8 C/cm2 and coercive field, Ec=23 kV/cm at 300 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110641
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Epitaxial metallic LaNiO3 thin films grown by pulsed laser deposition (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1233-1235 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial LaNiO3(LNO) thin films on LaAlO3(LAO), SrTiO3(STO), and YSZ are grown by pulsed laser deposition method at 350 mTorr oxygen partial pressure and 700 °C substrate temperature. As-deposited LNO films are metallic down to 10 K. c-axis oriented YBa2Cu3O7 (YBCO) films were grown on LNO/LAO as well as LNO/STO surfaces without affecting superconducting transition temperature of YBCO. Textured LNO thin films were grown on c-axis oriented YBCO/STO and YBCO/YSZ . Transport measurements of these bilayer films showed that LNO is a good metallic contact material for YBCO.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109612
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Tunneling and enhanced magnetoresistance in Nd2/3Sr1/3MnO3 thin films with microcracks (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 402-404 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We found that microcracks in thin Nd2/3Sr1/3MnO3 films create a series of intrinsic break junctions which are ideal for investigating tunneling phenomena in this system. A comparison of films with and without cracks, which have similar ferromagnetic Curie temperature (Tc) of 140–150 K, shows that the cracked film has a lower insulator to metal transition temperature TM (97 K vs 140 K), three orders of magnitude higher resistivity at TM, and two times larger magnetoresistance at 1 T near TM. At T〉TM we observed that ln ραT−1/4 in the uncracked film while in the cracked film a ln ραT−1/2 dependence was found. This indicates that the conductivity in the first case is due to variable range hopping in three dimension, while in the second case it is dominated by thermally activated tunneling across the insulating barriers (the microcracks). © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121848
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    BaBi4Ti4O15 ferroelectric thin films grown by pulsed laser deposition (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 603-605 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: BaBi4Ti4O15 (BBiT) is an n=4 member of the Bi-layer-structured ferroelectric oxide family (Aurivillius phases). BBiT thin films with preferred orientations have been grown on epitaxial conducting LaNiO3 electrodes on (001) SrTiO3 by pulsed laser deposition. Cross-section electron microscopy analysis reveals that the films consist of ct-axis oriented regions and mixed at- and ct-axis oriented regions. The mixed at- and ct-axis oriented regions show high surface roughness due to the rectangular crystallites protruding out of the surface, whereas the ct-axis oriented regions show a smooth surface morphology. In the mixed at- and ct-axis oriented regions, the BBiT films exhibit saturated ferroelectric hysteresis loops with remnant polarization Pr of 2 μC/cm2 and coercive field Ec of 60 kV/cm and no polarization fatigue up to 108 cycles. The regions having ct-axis orientation with a smooth surface morphology exhibit a linear P–E curve. The results show that the ferroelectric properties of a planar capacitor consisting of BBiT depend on the crystalline orientation of the film. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123159
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Low-energy electron-beam patterning of amine-functionalized self-assembled monolayers (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2466-2468 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Patterned amine-functionalized self-assembled monolayers have potential as a template for the deposition and patterning of a wide variety of materials on silicon surfaces, including biomolecules. Results are presented here for low-energy electron-beam patterning of 2-aminopropyltriethoxysilane and (aminoethylaminomethyl)phenethyltrimethoxysilane self-assembled monolayers on silicon substrates. On these ultrathin (1–2 nm) monolayers, lower electron beam energies (〈5 keV) produce higher resolution patterns than high-energy beams. Auger electron spectroscopy indicates that low-energy electron exposure primarily damages the amine groups. At 1 keV, a dose of 40 μC/cm2 is required to make the patterns observable by lateral force microscopy. Features as small as 80 nm were exposed at 2 keV on these monolayers. After exposure, palladium colloids and aldehyde- and protein-coated polystyrene fluorescent spheres adhered only to unexposed areas of the monolayers. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126378
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Silver doping: A potential means to grow high quality YBa2Cu3O7−x thin films on bare sapphire (1995)
    Springer
    Journal of superconductivity 8 (1995), S. 623-624 
    Details
    ISSN: 1572-9605
    Keywords: Ag-doped YBCO films ; sapphire
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract High qualityAg-doped YBa2Cu3O7−x (YBCO) thin films have been grown by laser ablation on 〈 ¯1012 〉 bare sapphire. This work demonstrates thatAg-doping can be used as very convenient means to realize good quality YBCO films on highly coveted sapphire substrates for microwave applications of highT c thin films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00727447
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    LaNiO3: A promising material for contact with YBa2Cu3O7− δ thin films (1996)
    Springer
    Journal of superconductivity 9 (1996), S. 17-18 
    Details
    ISSN: 1572-9605
    Keywords: Metallic oxide films ; contact conductance
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Epitaxial LaNiO3 metallic oxide thin films have been grown onc-axis oriented YBa2Cu3O7−δ thin films on 〈100〉 LaAlO3 substrates by pulsed laser deposition technique and the interface formed between the two films has been exmained by measuring the contact conductance of the same. The high value of specific contact conductance indicates the existence of a clean interface at the LaNiO3−YBaO2CuO3OO7−δ thin film contact.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00728418
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...