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  • 1
    Electronic Resource
    Electronic Resource
    Study of multilayer structures with InAs nanoobjects in a silicon matrix (2000)
    Springer
    Semiconductors 34 (2000), S. 810-814 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract MBE-grown multilayer structures with InAs quantum dots embedded in a crystalline silicon matrix were studied by high resolution transmission electron microscopy. The properties of the grown structures depend critically on the substrate temperature, growth cycle sequence, and layer thicknesses. It is shown that the silicon matrix can “accommodate” only a limited volume of InAs in the form of coherent clusters about 3 nm in size. With an increasing amount of deposited InAs, large dislocated InAs clusters are formed during Si overgrowth, accumulating excess InAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1188079
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  • 2
    Electronic Resource
    Electronic Resource
    Microstructure of U–Mo and U–W oxides investigated by means of high-resolution electron microscopy (1988)
    [S.l.] : International Union of Crystallography (IUCr)
    Acta crystallographica 44 (1988), S. 821-827 
    Details
    ISSN: 1600-5724
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Notes: The potential of high-resolution electron microscopy (HREM) is demonstrated by the investigation of complex oxides with a general formula [UnMmO]- [MpO3p + l], M = (Mo, W). The HREM structure images of β-UMo2O8 agree well with the model derived from X-ray data. It is found that the γ- U3Mo20O64 sample considered earlier as a monophase appears in fact as a set of isostructural phases. The structure of these phases with MoO3 octahedral block width varying within p = 1-7 is derived from electron microscope images. Both regular and irregular substitution of cations and the formation of uranium vacancies in M-O rows are detected in γ-U3Mo20O64. Interstitial sites in the structures are detected, which can be occupied by extra U and W cations. The electron microscope images of vacancy rows give evidence for the finite length of some M-O rows. In this case oxygen dangling bonds at the ends of rows are supposed to be saturated by interstitial tungsten atoms.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0108767388004374
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  • 3
    Electronic Resource
    Electronic Resource
    Self-patterning nano-electrodes on ferroelectric thin films for gigabit memory applications (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1592-1594 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In the present work, we report self-assembling bismuth-containing nano-electroded cells of layered perovskite ferroelectric thin films that are about 200 nm in size, that is 50 times smaller than the smallest cell reported to date. Heteroepitaxial Bi-rich Bi4Ti3O12 films were grown by pulsed laser deposition (PLD) on top of epitaxial conductive La0.5Sr0.5CoO3 (LSCO) layers equally deposited by PLD. The epitaxial LSCO has been grown on top of an epitaxial CeO2 yttrium-stabilized zirconia (YSZ) stack, itself deposited by PLD on Si(100) substrates. As a consequence of the high substrate temperature during the epitaxial deposition of the Bi4Ti3O12 layer, the excess Bi segregates, migrates to the surface where it forms a self-organized array of epitaxial mesas which possess metallic-like electrical characteristics. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122214
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  • 4
    Electronic Resource
    Electronic Resource
    Structure and optical properties of Si/InAs/Si layers grown by molecular beam epitaxy on Si substrate (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2677-2679 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial Si/InAs/Si heterostructure grown on (001) Si substrate by molecular beam epitaxy and annealed at 800 °C was investigated by high resolution transmission electron microscopy. Extensive interdiffusion leads to the formation of an InAs solid solution in the Si cap layer. Additionally, InAs-enriched regions with extensions of ∼6 nm, which exhibit two kinds of ordering are observed. The ordering of InAs molecules has occurred, respectively, in (101) and (101¯) planes inclined and (110) and (11¯0) planes parallel to the [001] growth direction. It is attributed to the energy gain from the reduced number of mixed Si–As and Si–In bonds. The sample show photoluminescence in the 1.3 μm region, which is tentatively attributed to the recombination of excitons localized in the ordered regions. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126441
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  • 5
    Electronic Resource
    Electronic Resource
    BaBi4Ti4O15 ferroelectric thin films grown by pulsed laser deposition (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 603-605 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: BaBi4Ti4O15 (BBiT) is an n=4 member of the Bi-layer-structured ferroelectric oxide family (Aurivillius phases). BBiT thin films with preferred orientations have been grown on epitaxial conducting LaNiO3 electrodes on (001) SrTiO3 by pulsed laser deposition. Cross-section electron microscopy analysis reveals that the films consist of ct-axis oriented regions and mixed at- and ct-axis oriented regions. The mixed at- and ct-axis oriented regions show high surface roughness due to the rectangular crystallites protruding out of the surface, whereas the ct-axis oriented regions show a smooth surface morphology. In the mixed at- and ct-axis oriented regions, the BBiT films exhibit saturated ferroelectric hysteresis loops with remnant polarization Pr of 2 μC/cm2 and coercive field Ec of 60 kV/cm and no polarization fatigue up to 108 cycles. The regions having ct-axis orientation with a smooth surface morphology exhibit a linear P–E curve. The results show that the ferroelectric properties of a planar capacitor consisting of BBiT depend on the crystalline orientation of the film. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123159
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  • 6
    Electronic Resource
    Electronic Resource
    Observation of Cu vacancies and their ordering in YBa2Cu4O8 (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1151-1153 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Laser-deposited epitaxial thin films of YBa2Cu3O7−δ investigated by high-resolution transmission electron microscopy reveal narrow layers of the 1-2-4 phase YBa2Cu4O8. Within the CuO double layers of this phase, columns of double Cu(1) vacancies are identified to occur at periodic spacings of 2a with a, b, and c denoting the unit cell axes. In addition, an interchange of the a and b axes of the 1-2-4 phase is observed on traversing along c. A corresponding structure model is presented, and possible reasons of forming this structure by stress relaxation or by diffusional processes are discussed. A possible contribution to flux pinning is considered in the context of the supercurrent and high frequency properties. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117088
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  • 7
    Electronic Resource
    Electronic Resource
    Structure of Ga0.47In0.53As epitaxial layers grown on InP substrates at different temperatures (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2809-2811 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The evolution of defect structures and surface reconstruction of Ga0.47In0.53As epitaxial layers grown by molecular beam epitaxy on InP substrate have been investigated by TEM and RHEED over a wide growth temperature range (150 °C≤Tg≤450 °C) before and after annealing. In the growth temperature range 400 °C≤Tg≤450 °C, extensive segregation of In near the layer surface takes place. The maximum of In concentration was found to lie under the layer surface. The kinetic of surface pit formation after annealing was explained in terms of surface reconstruction and As clustering. Extensive As clustering was observed after annealing for the growth temperature range 175 °C≤Tg≤300 °C. Analysis of diffuse scattering and dark-field images made it possible to propose an atomic model of cluster structure. Precipitate formation close to the interface was observed only for the samples grown at 150 °C and annealed at 500 °C. Differences in electrical properties between LT-grown GaAs and Ga0.47In0.53As are explained in terms of the structural defects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110294
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  • 8
    Electronic Resource
    Electronic Resource
    High bond energy and thermomechanical stress in silicon on sapphire wafer bonding (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 2972-2974 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silicon on sapphire wafer pairs are formed by direct wafer bonding of 3-in. silicon and sapphire wafers. Subsequent annealing commonly used to increase the bond energy imposes serious thermomechanical strain. The corresponding bending, recorded in situ as a function of temperature, reveals relaxations by de- and rebonding until the silicon wafer cracks into small fragments that mostly remain bonded. After further annealing up to 800 °C and cooling to room temperature, a strong curvature of the fragments indicates a frozen-in high temperature bond state with elastic energies around 100 J/m2. Cross-sectional transmission electron microscopy of the interface reveals an amorphous intermediate layer the thickness of which considerably increases with increasing the oxygen partial pressure during annealing. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118760
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  • 9
    Electronic Resource
    Electronic Resource
    Stress releasing mechanisms in In0.2Ga0.8As layers grown on misoriented GaAs [001] substrate (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2798-2800 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of substrate misorientation on the structure and morphology of In0.2Ga0.8As layers grown by molecular beam epitaxy on vicinal, near (001), GaAs substrates was investigated by transmission electron microscopy. The substrates were tilted at angles between 0° and 10° in 〈100〉, 〈110〉, and 〈120〉 directions. In layers which exceeded the critical thickness, networks of 60° dislocations running along the intersections of the four {111} planes with the interface were observed. Growth uniformity and anisotropy of strain relaxation were shown to depend on the type of growth steps introduced by a particular tilting direction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109213
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  • 10
    Electronic Resource
    Electronic Resource
    Structure and location of misfit dislocations in InGaAs epilayers grown on vicinal GaAs(001) substrates (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1536-1538 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The atomic structure of misfit dislocations at In0.2Ga0.8As/GaAs interfaces misoriented 2°–10° from (001) has been investigated by high-resolution electron microscopy. The misfit dislocations are predominantly dissociated 60° dislocations consisting of 90° and 30° Shockley partial dislocations and enclosed stacking faults. These dissociated 60° dislocations form increasingly asymmetrically on the different {111} glide planes as the misorientation increases. The 90° partial dislocations are not confined to the interface, but lie 0–100 A(ring) beneath it. The 30° partial dislocations, in turn, are pushed even further into the substrate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108632
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