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  • 1
    Electronic Resource
    Electronic Resource
    GaInP/GaP partially ordered layer type-I strained quantum well (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 4236-4238 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Strong photoluminescence is observed in strained GaInP quantum wells (QW) grown on GaP. Variable temperature photoluminescence indicates that the pseudomorphic quantum well consists of type-I regions of ordered GaInP and type-II regions of disordered GaInP. Observation of photoluminescence at room temperature suggests that this QW may be useful as an active layer for laser structures grown on GaP. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116956
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  • 2
    Electronic Resource
    Electronic Resource
    Laser stimulated selective area growth of quantum dots (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 3332-3334 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the selective area growth of InAs quantum dots on GaAs by ultraviolet (UV) laser stimulated organometallic vapor phase epitaxy. At the low substrate temperature of 435 °C, exposure to a 248.2 nm continuous wave laser beam enhances the InAs growth rate by approximately 30%, causing the transition from two-dimensional (2D) to 3D growth mode to occur in the laser stimulated region only. Photoluminescence spectra from the UV laser stimulated growth region show both wetting layer and quantum dot luminescence, whereas only the wetting layer peak is present in the spectra from the dark grown regions. A photoluminescence map shows good spatial agreement between the region exhibiting quantum dot luminescence and the UV stimulated spot size. Since no quantum dot peak shifts are detected, but the luminescence intensity increases towards the center of the region stimulated with the Gaussian UV beam, we conclude that the island density rather than island size distribution is influenced by the UV intensity. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121684
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  • 3
    Electronic Resource
    Electronic Resource
    AlGaN/GaN heterostructures on insulating AlGaN nucleation layers (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 388-390 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A single temperature process using AlGaN nucleation layers has been developed that produces device-quality, GaN-based materials with bilayer step surfaces. The AlGaN nucleation layer is deposited by flow modulation organometallic vapor phase epitaxy at temperatures in excess of 1000 °C, where GaN and AlGaN films can be subsequently grown. We have optimized this process on both sapphire and SiC substrates, where the conditions for nucleation are found to be quite different. For growth on SiC, aluminum mole fractions ranging from 6% to 35% result in featureless surfaces. Optimizing the alloy composition and thickness of the nucleation layer on SiC allows the deposition of GaN buffer layers exceeding 5 μm without the formation of cracks. A minimum of 15% aluminum in the nucleation layer is required for smooth growth on sapphire substrates. High room temperature two-dimensional electron gas mobilities of 1575 and 1505 cm2/Vs with sheet charge densities of 1.0×1013 and 1.4×1013 cm−2 are observed in undoped AlGaN/GaN structures placed on insulating AlGaN nucleation layers on sapphire and SiC, respectively. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124384
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  • 4
    Electronic Resource
    Electronic Resource
    Single step process for epitaxial lateral overgrowth of GaN on SiC and sapphire substrates (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 3820-3822 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using flow modulation organometallic vapor phase epitaxy, a process has been developed which produces epitaxial lateral overgrowth of GaN-base materials directly on SiC and sapphire substrates patterned with silicon nitride. The key feature of this single step process is the use of a high temperature AlGaN nucleation layer which wets the exposed substrate surface, without significant nucleation on the mask. This eliminates the need for regrowth while producing smooth growth surfaces in the window opening as well as over the mask. Subsequent GaN deposition results in relatively defect free materials grown laterally over the mask. Using arrays of stripe windows aligned parallel to the 〈11(underbar)00〉 crystal direction, the epitaxial films completely planarize after roughly 5 microns of growth. Defect densities estimated from atomic force micrographs indicate a reduction from mid 108 to 105 cm−2 in regions over the window and over the mask, respectively. This process represents a significant simplification over currently used regrowth methods for obtaining low defect density laterally overgrown GaN materials. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125467
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  • 5
    Electronic Resource
    Electronic Resource
    High electron mobility AlGaN/GaN heterostructure on (111) Si (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 736-738 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Room-temperature Hall mobilities exceeding 900 cm2/V s are obtained for AlGaN/GaN heterostructures on (111) Si by single-temperature flow modulation organometallic vapor phase epitaxy. Thin pseudomorphic AlGaN top layers exhibit a 1.5 nm surface roughness and induces a two-dimensional electron gas sheet carrier concentration of 1.0×1013 cm−2. The GaN buffer layer has a background carrier concentration of 1.0×1015 cm−3, 130 arcsec x-ray diffraction full width at half maximum, and a low-temperature photoluminescence linewidth of 10 meV. An AlN nucleation layer provides static electrical isolation between the AlGaN/GaN and the conducting Si substrate. Large crack-free areas of high-crystalline-quality epitaxial material are obtained and have been successfully used for transistor fabrication. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125878
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