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  • 1
    Electronic Resource
    Electronic Resource
    Pseudo-negative photocurrent spectroscopy in GaAs-AlAs superlattices (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 4197-4202 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pseudo-negative photocurrent spectra, i.e., the appearance of a minimum in photocurrent at an absorption maximum, are experimentally studied at different temperatures and excitation intensities in GaAs-AlAs superlattices on GaAs substrates. Superlattice and substrate are isolated by a thick Al0.3Ga0.7As barrier, but electrically connected through penetrating contacts. A simple model is proposed for the analysis of the conditions which can lead to pseudo-negative photocurrent in this sample configuration. The radiative recombination of the carriers in the superlattice was found to be the main process determining the sign of the photocurrent at an absorption maximum. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361877
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  • 2
    Electronic Resource
    Electronic Resource
    Automated null ellipsometer with rotating analyzer (1994)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 65 (1994), S. 3657-3660 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An automated version of a spectroscopic ac null ellipsometer is described. By simultaneous variation of the angle of incidence and the polarizer azimuth, circular polarization of the reflected radiation can be obtained for any sample configuration. This state of polarization is checked by a rotating analyzer detector system with lock-in technique, thus achieving the highest precision that is theoretically possible. The experimental details including the minimization routine (simplex method) are presented. First experiences gained with dielectric function spectra of InP show the high reproducibility and accuracy of the arrangement. From numerically calculated second derivatives the energy and type of critical interband points are determined. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1144487
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  • 3
    Electronic Resource
    Electronic Resource
    Population properties and carrier dynamics in a GaAs/(Al,Ga)As double-quantum-well superlattice investigated by time-resolved photoluminescence spectroscopy (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 629-631 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have analyzed the electric-field-dependent subband population as well as the carrier dynamics in a double-quantum-well GaAs/(Al,Ga)As superlattice using time-resolved photoluminescence (PL) spectroscopy. Applying a rate equation model, the steady-state subband population of the majority carriers in the two quantum wells and the transfer coefficients for the minority carriers can be directly determined from measured time-dependent PL spectra. A comparison with results derived from steady-state PL investigations demonstrates that the dynamics of the minority carriers are essential in order to determine the population of the majority carriers. In the experiments, we used an n–i–n structure, in which electrons are the majority and holes are the minority carriers. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1388873
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  • 4
    Electronic Resource
    Electronic Resource
    Direct evidence of the indirect energy gap in InAlAs/AlAsSb multiple quantum wells by time-resolved photoluminescence (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1620-1622 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Time-resolved photoluminescence spectroscopy has been applied to determine the nature of the energy gap of InAlAs/AlAsSb multiple quantum well structures. While the InAlAs buffer layer exhibits a decay time of the order of 1 ns, which is typical for direct gap semiconductors, the decay time of the InAlAs/AlAsSb multiple quantum well structures is prolonged by more than two orders of magnitude. This observation is direct evidence for the presence of an indirect energy gap. The decay time increases with increasing InAlAs layer thickness indicating the decreasing overlap of electron and hole wave functions. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121132
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  • 5
    Electronic Resource
    Electronic Resource
    Resonant Raman scattering and spectral ellipsometry on InAs/GaSb superlattices with different interfaces (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2972-2974 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used Raman spectroscopy and spectral ellipsometry to investigate InAs/GaSb short-period superlattices (SLs), grown by molecular-beam epitaxy, with either InSb- or GaAs-like interfaces. Room-temperature ellipsometric measurements show spectral features in the dielectric function due to the E1 and E1+Δ1 interband transitions of GaSb and InAs. For SLs with small InAs layer thicknesses (4 ML InAs/10 ML GaSb) the critical point energies are found to depend on the type of interfacial bonding, with an energy shift of up to 50 meV observed between SLs with GaAs- and InSb-like interfaces. Resonant Raman measurements show a pronounced enhancement in scattering efficiency for the superlattice phonons and, in particular, for the interface modes for incident photon energies matching the critical point energies of the SL. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112480
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  • 6
    Electronic Resource
    Electronic Resource
    In-plane photocurrent spectroscopy in GaAs-AlAs superlattices (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1533-1535 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The in-plane photoconductivity of GaAs-AlAs superlattices on GaAs substrates is experimentally studied as a function of the incident photon energy at different temperatures and light intensities. Superlattice and substrate are electrically isolated by a thick Al0.3Ga0.7As barrier but connected through penetrating contacts. Depending on the transport properties of the two subsystems pseudo-negative photoconductivity can be observed, i.e., at the absorption maximum of the superlattice the photocurrent exhibits a minimum. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113637
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  • 7
    Electronic Resource
    Electronic Resource
    The counterplay between brightness and contrast in electroluminescence devices
    Amsterdam : Elsevier
    Journal of Luminescence 40-41 (1988), S. 779-781 
    Details
    ISSN: 0022-2313
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0022-2313(88)90434-6
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