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  • 1
    Electronic Resource
    Electronic Resource
    The importance of high-index surfaces for the morphology of GaAs quantum dots (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 3597-3601 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Results of a combined experimental and theoretical study are presented. GaAs{113} and {112} surfaces have been prepared by molecular beam epitaxy and analyzed in situ by low-energy electron diffraction and ex situ by atomic-force microscopy. The experimentally found structures are in full agreement with surface energies calculated by density-functional theory. The {112} surfaces are unstable under faceting into low-index planes, whereas the {113} surfaces appear as singular surfaces. Particularly, for GaAs(113) the surface energy is comparable with the values for the low-index surfaces. The impacts of these results on the interface between InAs quantum dots and the embedding GaAs matrix are discussed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369720
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Planar reactor plasma etching with barrel reactor power supply (1985)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 56 (1985), S. 761-763 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A very simple and inexpensive method of converting a barrel plasma etching system into a planar system is described. Details of structure and operating characteristics of the planar reaction chamber are shown.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1138167
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  • 3
    Electronic Resource
    Electronic Resource
    Thermal etching of GaAs (1 1 3) surfaces (1998)
    Springer
    Journal of materials science 9 (1998), S. 115-119 
    Details
    ISSN: 1573-482X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract We discuss scanning electron micrographs and atomic force microscope images of thermally etched GaAs(1 1 3) surfaces. The GaAs(1 1 3)A and GaAs(1 1 3)B surfaces are compared. The polarity of the surface leads to a different morphology for the two surfaces after thermal etching. It is found that the Ga-enriched droplets, which form under As-deficient conditions at higher temperatures, are sitting on characteristic pedestals, which are different for the two faces. The facets occurring after this thermal etching process are identified. They represent thermally favourable surfaces under the arsenic-deficient conditions of the thermal etching process. © 1998 Chapman & Hall
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1008857321897
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    Paper (German National Licenses)
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