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  • 1
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 99 (1993), S. 9248-9254 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The dissociative chemisorption of nitrogen on clean and cesiated Ru(0001) surfaces has been studied using high-resolution electron energy loss spectroscopy (HREELS) and thermal desorption spectroscopy (TDS). N2 (at 300 K) chemisorbs dissociatively with a sticking coefficient of 2×10−6, independent of substrate temperature which was varied between 420 and 700 K. The saturation coverage is found at 0.5 monolayer. The energy of the N–Ru stretching vibration is 71 meV at the bare surface and 69 meV at the cesiated Ru(0001) surface. The activation energy for desorption is about 190 kJ/mol for small coverages. The kinetic data suggest the existence of an activation barrier in the entrance channel of adsorption. Preadsorption of 0.08 monolayer of Cs increases the sticking coefficient only by a factor of 1.3, and the maximum amount of adsorbed N is reduced due to blocking of adsorption sites through Cs.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 3597-3601 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Results of a combined experimental and theoretical study are presented. GaAs{113} and {112} surfaces have been prepared by molecular beam epitaxy and analyzed in situ by low-energy electron diffraction and ex situ by atomic-force microscopy. The experimentally found structures are in full agreement with surface energies calculated by density-functional theory. The {112} surfaces are unstable under faceting into low-index planes, whereas the {113} surfaces appear as singular surfaces. Particularly, for GaAs(113) the surface energy is comparable with the values for the low-index surfaces. The impacts of these results on the interface between InAs quantum dots and the embedding GaAs matrix are discussed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 397-399 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Si(111) surfaces have been prepared electrochemically. Using high resolution electron energy loss spectroscopy it is demonstrated that perfectly terminated and clean Si(111) 1×1-H surfaces can be achieved. The dark current observed during electrochemical preparation is shown to be a very reliable control parameter.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 2309-2311 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InAs was grown by molecular-beam epitaxy onto GaAs(001) until quantum dots (QDs) formed. At this point, the growth was interrupted and the uncovered QDs were investigated in situ by scanning tunneling microscopy (STM). Atomically resolved STM images of the QDs revealed that four dominating bounding facets occur, whose Miller indices were identified to be {137}. The assignment of the facet orientation was based on experiments on planar high Miller index GaAs surfaces. In addition, the latter experiments indicated that {137} facets are thermodynamically stable only up to a certain size. This conclusion is assumed to explain the sharp size distribution of InAs QDs. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Journal of the American Chemical Society 26 (1904), S. 88-91 
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Journal of the American Chemical Society 26 (1904), S. 91-92 
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Science Ltd
    Pediatric anesthesia 7 (1997), S. 0 
    ISSN: 1460-9592
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Midazolam was applied transmucosally in 47 children randomly assigned to three different groups. Group N received 0.2 mg·kg−1 nasally, group R 0.5 mg·kg−1 rectally, and group S 0.2 mg·kg−1 sublingually. All groups were treated 60 min prior to a planned i.v. puncture with EMLA®. Reliable and valid psychological parameters (such as emotional situation, shivering, awareness, respiratory rate and facial colour) were scored after premedication and before and after i.v. puncture, 20 min after premedication and until induction. A blood sample was drawn 10, 30 and 60 min after premedication and the levels of midazolam, alpha-hydroxy-midazolam, ACTH, glucose and cortisol were measured. In all three groups the plasma levels of midazolam 10 min after premedication were higher than 70 ng·ml−1 (accepted as a sedative level). 30 min after premedication the midazolam level in the sublingual group was statistically significantly higher than in the nasal group and the psychological parameters in all three groups were significantly changed (10 min after premedication). The psychological parameters were not significantly different between the three groups over the whole study. Sublingual premedication has some advantages (most readily accepted, highest plasma levels and lowest deviations) and could be the first choice in premedication of children. All three transmucosal applications are safe and well accepted, although nasal application was rejected by two of the children.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 102 (1995), S. 1432-1439 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: In order to investigate microscopic steps of ammonia synthesis on Ru surfaces, hydrogen adsorption on a Ru(0001) surface, precovered by atomic nitrogen, has been studied using high-resolution electron energy loss spectroscopy (HREELS) and thermal desorption spectroscopy (TDS). Hydrogen adsorption has been performed with the Ru sample at 90 and 300 K. At 90 K, the saturation coverage of hydrogen decreases with increasing N precoverage. The vibrational properties of H do not change much in the presence of N compared to those on the bare Ru(0001) surface exhibiting one single mode at 85 meV for small H coverages and losses at 99 and 141 meV at H saturation. Heating of the H+N coadsorbed layer from 90 to 300 K does not result in any observable N–H bond formation. After exposure of N/Ru(0001) to H2 at room temperature, however, NH3 and NH species are observed on the surface. NH3 is characterized by its symmetric bending mode δs at 145 meV. The reaction intermediate NH is stable up to 400 K and shows losses of ν(Ru-NH), δ(N–H), and ν(N–H) at 86, 166, and 410 meV, respectively. A barrier height of 93 kJ/mol is estimated for the NH3 synthesis reaction from N and H. In the presence of some coadsorbed Cs, NHx species are not observed at 300 K indicating a destabilization of NHx by Cs. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 104 (1996), S. 375-381 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The dissociative chemisorption of N2 on Ru(0001), Ru(101¯0), and Ru(112¯1) surfaces at 300 K was studied by means of high-resolution electron energy loss spectroscopy and thermal desorption spectroscopy. The initial sticking coefficient was determined to s0=(1±0.8)×10−12, within the limits of error independent of surface orientation. On Ru(101¯0) and Ru(112¯1) small amounts of N can be dissolved into the subsurface region. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 105 (1996), S. 8944-8950 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The N/Ru(0001) system was studied by thermal desorption spectroscopy (TDS), low-energy electron diffraction (LEED), and high-resolution electron energy-loss spectroscopy (HREELS). Atomic nitrogen was prepared by NH3 decomposition at sample temperatures decreasing from 500 to 350 K during NH3 exposure. A maximum N coverage of θN=0.38 could thus be achieved. (square root of 3), split 2×2 and 2×2 LEED patterns were observed for decreasing θN. After NH3 decomposition and before annealing the sample to a temperature above 400 K, the surface is composed of adsorbed N, H, and NH species. This composite layer exhibits a split (square root of 3) LEED pattern due to domains of size 4 with heavy walls. This phase decays through dissociation of NH leading to sharp first-order type desorption peaks of H2 and N2. From the weak intensity of the ν(Ru–NH) stretch mode it is concluded that NH is adsorbed at threefold-hollow sites. The energy of the ν(Ru–N) mode shifts from 70.5 to 75.5 meV when θN is increased from 0.25 to 0.38. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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