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  • 1
    Electronic Resource
    Electronic Resource
    Consistency between experimental data for ambipolar diffusion length and for photoconductivity when incorporated into the "standard'' defect model for a-Si:H (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 6050-6059 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Reasonable consistency between experimental data for the ambipolar diffusion length and experimental data for the photoconductivity is demonstrated for steady-state measurements performed on a-Si:H layers. This consistency is obtained based on the "standard'' defect model for a-Si:H. In this model the dangling bonds are taken into account, considering their amphoteric behavior and treating then as recombination centers, whereas the band tails are taken into account as simple two-valued defects acting as traps. Consistency is obtained based on (1) a particular form of the recombination function such as is considered appropriate for the dangling bonds, as well as, additionally, (2) the local charge neutrality condition. The experimental data analyzed are power laws of the ambipolar diffusion length and of the photoconductivity (versus light intensity); they are obtained for a series of slightly p and n-doped samples including the undoped case. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360545
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  • 2
    Electronic Resource
    Electronic Resource
    Compensation of the dangling-bond space charge in amorphous silicon solar cells by graded low-level doping in the intrinsic layer (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 986-988 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The compensation of the dangling-bond space charge in amorphous silicon p-i-n solar cells by graded, low-level doping in the intrinsic layer is discussed and demonstrated experimentally. Carrier collection in p-i-n cells without doping indicates that the degraded state space charge is largely positive, and thus that boron doping should be beneficial. Solar cells with linearly decreasing boron doping profiles are shown to yield a homogeneous collection in the intrinsic layer, and a red light conversion efficiency superior to that of undoped cells after light soaking. Also, the optimal doping concentration is shown to be a direct measure of the degraded state defect density.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112170
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  • 3
    Electronic Resource
    Electronic Resource
    Extraction with Oscillating Droplets in a Perforated-Plate Column (1975)
    s.l. : American Chemical Society
    Industrial and engineering chemistry 14 (1975), S. 379-384 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/i260056a005
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  • 4
    Electronic Resource
    Electronic Resource
    Lower valence fluorides of chromium. 2. The phase potassium chromium fluoride (K0.43-0.59CrF3) (1990)
    s.l. : American Chemical Society
    Inorganic chemistry 29 (1990), S. 3037-3041 
    Details
    ISSN: 1520-510X
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ic00341a036
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  • 5
    Electronic Resource
    Electronic Resource
    New stable microwave plasma passivated a-Si MIS cells with high open circuit voltage (1988)
    Springer
    Applied physics 46 (1988), S. 31-34 
    Details
    ISSN: 1432-0630
    Keywords: 81.60.-j ; 72.80.Ng ; 84.60.Jt
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A new microwave plasma surface passivation technique has been applied to a-Si∶H type solar cells at various low pressure O2 and H2O atmospheres. Open circuit voltageV OC close to 900 mV and in excess of 900 mV are obtained with Ir, and with Pt, respectively, as continuous barrier metals. The corresponding unpassivated cells (Schottky type solar cells) show considerably lower values ofV OC=650 mV. In contrast to published results involving Ni, Pd, Zr, and other metals as Schottky barriers, we have observed over a period of several months a remarkably good stability of the passivated devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00615134
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  • 6
    Electronic Resource
    Electronic Resource
    Influence of plasma excitation frequency fora-Si:H thin film deposition (1987)
    Springer
    Plasma chemistry and plasma processing 7 (1987), S. 267-273 
    Details
    ISSN: 1572-8986
    Keywords: Amorphous silicon ; high-rate deposition ; frequency dependence ; properties ofa-Si
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract The effect of plasma excitation frequency on the deposition rate and on the optical and electrical properties of amorphous silicon film is studied over the range 25–150 MHz. Deposition rates as high as 21 Å/sec are obtained at ∼70 MHz, which is a factor of 5–8 larger than typical rates obtained for the conventional 13.56-MHz silane glow-discharge system. Only minor changes occur in the defect density (as measured by the photothermal deflection spectroscopy method), the optical bandgap, and the electrical conductivity over this frequency range. In a preliminaryinterpretation given here, the large variation of the deposition rate as a function of excitation frequency is explained in terms of changes in the electron energy distribution function.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01016517
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  • 7
    Electronic Resource
    Electronic Resource
    Deformation and fracture in directionally solidified Co-CoAl eutectic (1993)
    Springer
    Journal of materials science 28 (1993), S. 5843-5851 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The effect of growth defects known as lamellar terminations on the yielding and fracture behaviour of Co-CoAl eutectic single crystals was studied using tensile tests and finite-element modelling. The yield strength and strain to fracture were found to decrease with increasing termination density. Observations of deformed surfaces and serial sectioning experiments on fractured tensile specimens revealed that crack initiation during the fracture process was enhanced by the presence of lamellar terminations. The fracture surfaces were found to have a staircase-type appearance, which indicated that the final fracture process was discontinuous with a step-wise propagation from one CoAl lamella to adjacent CoAl lamellae. A computer simulation was conducted to determine the stress distributions about lamellar terminations in model microstructures, since the experimental results suggested that the lamellar terminations behaved as stress concentrations in the microstructure. The finite-element calculation confirmed that lamellar terminations can influence the yielding process; the stress at which the first slip system was activated was found to decrease with increasing termination density.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00365191
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