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  • 1
    Electronic Resource
    Electronic Resource
    Surface photovoltage spectroscopy of thin films (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 8549-8556 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The surface photovoltage (SPV) spectrum due to subband-gap illumination of thin films is theoretically studied. It is shown that this SPV is inherently sensitive to buried interfaces just as it is sensitive to the external semiconductor surface. The different contributions to the SPV from all the optically active gap states present within a sample, consisting of a bulk substrate covered by a thin film, are analyzed. Analytical expressions are obtained in the low illumination intensity and the depletion approximation regime. The evolution of the SPV spectrum with film thickness is examined and is found to depend on both site and population of the gap states. Three modes of evolution are found, according to the relative importance of gap state population changes with film thickness. These modes are confirmed by a numerical simulation of a thin film of pseudomorphic InAlAs on InP substrates and by experiments conducted on the same system. The approach is also applied to the InP/In2O3 system, revealing gap state formation, followed by filling with electrons, thereby explaining previous observations of nearly ideal I–V behavior at this junction. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362535
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  • 2
    Electronic Resource
    Electronic Resource
    Surface photovoltage spectroscopy of InxAl1−xAs epilayers (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 7163-7169 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The surface and interface electronic structure of mismatched InxAl1−xAs epitaxial layers grown by molecular beam epitaxy on InP have been investigated using surface photovoltage spectroscopy. The crystalline structure of the epilayers was also examined by double-crystal x-ray diffraction. For coherently strained layers, only a few gap states are identified. Highly strained samples with inferior crystalline quality, as judged by a broadened x-ray diffraction peak and the absence of Pendellosung fringes, display a rich spectrum of states in the band gap. Some of the states are close to the surface while others are located in the vicinity of the InAlAs/InP heterointerfaces. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360425
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  • 3
    Electronic Resource
    Electronic Resource
    Effect of deposition parameters on the properties of In2O3/InP junctions (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2264-2269 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transparent conducting indium oxide films have been prepared by means of reactive evaporation of In onto p-type InP substrates at various deposition temperatures [in the range of 25 °C (RT)–330 °C] and under different oxygen pressures (in the range of 8×10−5 Torr up to 9×10−4 Torr). The chemical composition and structural properties of the films have been investigated using such analytical tools as Auger electron spectroscopy (AES), x-ray diffraction, and scanning electron microscopy (SEM). The combination of AES and SEM has proved to be extremely useful for interface analysis. The concentrations of oxidized and unoxidized (elemental) In in the tested samples have been investigated by deconvolution of the appropriate Auger MNN transitions using reference spectra of In2O3 and InP. The films were found to be polycrystalline at all deposition temperatures above RT under all the tested range of oxygen pressures. Nearly stoichiometric In2O3 films have been observed on all the investigated samples. Elemental In at the interfaces of films grown at low deposition temperatures has been noted. The effect of the oxygen pressure and deposition temperature on the films properties is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356290
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  • 4
    Electronic Resource
    Electronic Resource
    Electrical and optical properties of Cu- and Ga-doped Hg1−xCdxTe layers grown by liquid-phase epitaxy (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 672-676 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of Cu (acceptor) and Ga (donor) on the electrical and optical properties of Hg1−xCdxTe (x=0.2) layers was investigated. The layers were grown by liquid-phase epitaxy from Te-rich solutions and the dopants were intentionally introduced during the growth process. Doping efficiencies between 0.025 at a hole concentration of p=6×1018 cm−3 and 0.15 at p=6×1017 cm−3 were found for Cu. The electron concentration in the as-grown Ga-doped layers saturated at n=2×1017 cm−3, but increased significantly to n=8×1018 cm−3 as a result of an annealing process. The doping efficiency was 0.02. The doping and electrical properties of the layers are explained by assuming incorporation of both electrically active and electrically inactive impurity atoms. The high free electron concentrations in the Ga-doped layers resulted in a strong Burstein–Moss shift [T. S. Moss, G. J. Burrell, and B. Ellis, in Semiconductor Optoelectronics (Butterworths, London, 1973), p. 42] of the absorption edge, and effects of plasma frequency. These effects are analyzed and discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343102
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  • 5
    Electronic Resource
    Electronic Resource
    Surface states and surface oxide in GaN layers (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 390-395 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Surface photovoltage spectroscopy, photoluminescence, Auger electron spectroscopy and x-ray photoelectron spectroscopy were used to correlate the chemical changes induced by HCl etching of GaN surface to changes in the yellow luminescence related states, through their manifestation in surface photovoltage. The results show a correlation between a removal of the gallium oxide from the surface and a reduction of the yellow luminescence related transition in the surface photovoltage spectra. Based on this observation, it is suggested that the well known yellow luminescence is emitted from surface states associated with the gallium oxide that decorates the free surface and possibly also the substrate interface and internal grain boundaries. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1330553
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  • 6
    Electronic Resource
    Electronic Resource
    Thermal stability of Pt Schottky contacts to 4H–SiC (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 5724-5728 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Depth profiles by x-ray photoelectron spectroscopy have been used in conjunction with current–voltage measurements to study the thermal stability of a 50-nm-thick Pt contact to n-4H–SiC substrate. A reaction between the Pt and the SiC substrate is observed at temperatures of 600 °C and above. Annealing below that temperature improves the ideality and the uniformity of the Schottky characteristics, while annealing above this temperature degrades the electrical performance and uniformity. Thermodynamic stability is not reached even after annealing for 1 h at 900 °C. A local improvement of the characteristics at 800 °C is correlated with the formation of a second graphite film in the Pt–SiC reaction. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1319165
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  • 7
    Electronic Resource
    Electronic Resource
    Correlation between electrical and compositional properties of SiO2-InSb interfaces (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 430-434 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied interfaces of n-InSb with SiO2 films, obtained by low-temperature chemical vapor deposition, using capacitance-voltage measurements and Auger electron spectroscopy (AES). Improvements of electrical properties of MOS capacitors based on this system were sought by various pre- and post-treatments. The results show that a methanol pre-treatment causes significant improvements in the flat-band voltage (VFB) of metal-oxide-semiconductor capacitors based on this system. In addition, thermal post-annealing in oxidizing atmospheres also improved VFB. AES reveals that at the SiO2-InSb interface there is a native oxide interlayer, the width of which was found to be reduced by a factor of 2–3 due to the specified treatments. Therefore, we attribute the VFB improvement to the reduction in the density of charges and traps due to the narrowing of the interfacial native oxide, in agreement with other recent results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340258
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  • 8
    Electronic Resource
    Electronic Resource
    Alloy composition and electronic structure of Cd1−xZnxTe by surface photovoltage spectroscopy (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 703-707 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The alloy composition of a Cd1−xZnxTe(111) sample and its spatial homogeneity have been determined by surface photovoltage spectroscopy (SPS) and compared to conventional energy dispersive x-ray spectroscopy measurements. Experimental improvements of the former technique yield a contactless, surface sensitive, and highly accurate spectral resolution of the band gap (error〈4 meV) and consequently of the Zn concentration (error〈0.6% in comparison with the latter technique). In addition, SPS is capable of determining the face and type of the Cd1−xZnxTe as well as identifying gap states at its surface. The electronic structure has been investigated in comparison with n-CdTe(111), before and after various surface chemical treatments. An acceptor surface state has been observed at 1.21 eV below the conduction band edge and attributed to TeO2. A donor surface state (with a lower concentration relative to the corresponding state in CdTe) associated with Cd atom displacement has been found at 1.42 eV above the valence band maximum. A chemically induced surface state at 0.72 eV below the conduction band edge may be due to Zn vacancies, as supported by x-ray photoelectron spectroscopy measurements. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1425071
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  • 9
    Electronic Resource
    Electronic Resource
    GaAs/AlGaAs single quantum well p-i-n structures: A surface photovoltage study (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 6902-6907 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photovoltage (PV) response of single quantum well p-i-n structures under open circuit conditions has been studied experimentally and numerically. The numerical calculations show a monotonic increase in the PV response with decreasing well width, implying that the ensuing increase in carrier generation rate and band gap governs the PV response. The well layer has been shown to dominate the recombination of excess carriers generated throughout the structure, and their lifetime at the well has been found to be a critical structure parameter. Using a simple semi-empirical model, the effective carrier lifetimes at the well layer/interfaces for the different samples were estimated. The results demonstrate the benefits of using surface photovoltage spectroscopy for characterization and quality control of quantum well structures. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371770
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  • 10
    Electronic Resource
    Electronic Resource
    Ultrahigh vacuum study of indium oxide GaAs(110) interfaces (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 925-930 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Indium oxide/n-GaAs(110) interfaces fabricated by means of reactive evaporation of indium in the presence of oxygen onto ultrahigh vacuum cleaved GaAs(110) have been studied by means of Auger electron spectroscopy and electron energy loss spectroscopy. The results show that the growth of the indium oxide layers at room temperature under a wide range of oxygen pressures followed the Stransky–Krastanov model. In all cases the presence of In clusters at the interface was observed, and at the high-pressure regime (∼ 1 × 10−4 Torr) some oxidation of the GaAs surface was noted as well. These results can be correlated to our earlier report [J. Appl. Phys. 69, 1494 (1991)] on the performance of diodes produced under high vacuum conditions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351768
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