Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Interdiffusion of CdS and Zn2SnO4 layers and its application in CdS/CdTe polycrystalline thin-film solar cells (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 4564-4569 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this work, we found that the interdiffusion of the CdS and Zn2SnO4 (ZTO) layers can occur either at high temperature (550–650 °C) in Ar or at lower temperature (400–420 °C) in a CdCl2 atmosphere. By integrating a Zn2SnO4 film into a CdS/CdTe solar cell as a buffer layer, this interdiffusion feature can solve several critical issues and improve device performance and reproducibility of both SnO2-based and Cd2SnO4-based CdTe cells. Interdiffusion consumes the CdS film from both the ZTO and CdTe sides during the device fabrication process and improves quantum efficiency at short wavelengths. The ZTO film acts as a Zn source to alloy with the CdS film, which results in increases in the band gap of the window layer and in short-circuit current density Jsc. Interdiffusion can also significantly improve device adhesion after CdCl2 treatment, thus providing much greater process latitude when optimizing the CdCl2 process step. The optimum CdCl2-treated CdTe device has high quantum efficiency at long wavelength, because of its good junction properties and well-passivated CdTe film. We have fabricated a Cd2SnO4/Zn2SnO4/CdS/CdTe cell demonstrating an NREL-confirmed total-area efficiency of 15.8% (Voc=844.3 mV, Jsc=25.00 mA/cm2, and fill factor=74.82%). This high-performance cell is one of the best thin-film CdTe solar cells in the world. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1351539
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    A Hall probe technique for characterizing high-temperature superconductors (1992)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 2259-2262 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Thin-film GaAs Hall probes were fabricated by molecular beam epitaxy technology. A contactless technique was developed to characterize thin-film, high-temperature superconducting (HTSC) materials. The Hall probes detected the ac magnetic flux penetration through the high-temperature superconducting materials. The Hall detector has advantages over the mutual inductance magnetic flux detector.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1143147
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Dietary Folate and Biogenic Amines in the CNS (1987)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of neurochemistry 49 (1987), S. 0 
    Details
    ISSN: 1471-4159
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Abstract: Abnormal biogenic amine biosynthesis has been observed in humans and animals with endogenous and exogenous disturbances in folate metabolism. In an attempt to study this interaction biochemically, rats were depleted or repleted with folate for 10 weeks. Folate levels in depleted animals in serum and CSF correlated with stores in liver and brain, respectively. In depleted or repleted animals, there was no significant effect on biogenic amine metabolism in the CNS, as determined by quantitation of biogenic amines in brain and their respective metabolites in brain and CSF. These results are contrary to studies by other investigators. We suspect, however, that specific genetic defects in folate metabolism do result in impaired biogenic amine metabolism and probably at the level of disturbed biopterin cofactor functions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1471-4159.1987.tb03425.x
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Stress variations and relief in patterned GaAs grown on mismatched substrates (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 555-557 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cathodoluminescence scanning electron microscopy studies reveal significant variations in stress across etched patterns of GaAs grown on both InP and Si substrates. The stress in the epilayer is relieved at convex corners and in patterned areas with dimensions on the order of 10 μm. The stress is uniaxial near the edge of a patterned region and changes to biaxial away from the edge, producing nonuniformities in the optical properties of patterned regions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99415
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Stress variations due to microcracks in GaAs grown on Si (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 2236-2238 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Luminescence studies of thick (≥5 μm) GaAs epitaxial layers grown on Si substrates reveal regions of nonuniform stress associated with the presence of microcracks. Using cathodoluminescence spectroscopy as a tool for microcharacterization, the magnitude of the stress, derived from the peak positions of the luminescence spectra, is shown to increase gradually as a function of distance from the intersection of two microcracks. The greatest degree of stress relief was found at this intersection.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98951
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Dislocation density reduction through annihilation in lattice-mismatched semiconductors grown by molecular-beam epitaxy (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 5609-5611 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial InAs/GaAs, GaAs/Ge/Si, GaAs/InP, and InAs/InP heterostructures are grown by molecular-beam epitaxy. Transmission electron microscopy studies reveal that, for these heteroepitaxial systems, the threading dislocation density is inversely proportional to the epilayer thickness. At a given thickness, the threading dislocation density is relatively insensitive to lattice mismatch (3.2%〈||Δa||/a〈7.2%), to differences in thermal expansion coefficients (6.9×10−7〈||Δα||〈3.4×10−6 K−1), to interfacial surface chemistry, and to epilayer morphology. Epitaxial layers incorporating growth interrupts produce lower overall defect densities, yet they maintain defect-reduction profiles similar to those observed in layers without the growth interrupt.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340343
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Characterization of GaAs wafers and epilayers with electron-beam-induced current, etching, and reflected light (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 4248-4254 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used a combination of electron-beam-induced current (EBIC), etching, and optical measurements to show dramatic differences between the minority-carrier transport properties and defect structures in GaAs wafers from two different vendors. We found that the EBIC defects correspond to the traditional ones found with molten KOH etching and optical inspection. However, the EBIC micrographs give a great deal of additional information. The EBIC patterns from the first vendor's wafer showed diagonal striations and point defects that made the EBIC go to zero and were interconnected by wormlike lines. The second vendor's wafers showed EBIC point defects that only suppressed the response by 20% and gettered the surrounding material so that it had higher EBIC response. However, this second vendor's wafer had about a 15% overall lower EBIC response and a much higher density of surface polish defects identified by reflected light. Etching data showed that EBIC defects are bulk material properties and that electrochemical etching with a KOH electrolyte allows the wormlike defects to be seen optically in a Nomarski equipped microscope. Examination of epilayers showed that the wafer defects did not propagate up into a 4-μm-thick layer grown by vacuum chemical epitaxy or a 1.5-μm-thick layer grown by molecular-beam epitaxy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339098
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Growth and characterization of GaAs/Ge epilayers grown on Si substrates by molecular beam epitaxy (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 4186-4193 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial GaAs/Ge films are grown by molecular beam epitaxy (MBE) on Si substrates. The effect of various MBE growth conditions on the sample morphology, the defect density, and the optical properties of GaAs and Ge epilayers is examined. Scanning electron microscopy, plan-view and cross-sectional transmission electron microscopy, reflection high-energy electron diffraction, and photoluminescence are used to characterize epitaxial layers. It is found that the defect density decreases with increasing epilayer thickness. This is due to an annihilation process that affects both threading dislocations and stacking faults. The substrate temperature during Ge growth is found to affect the properties of both the Ge and GaAs films. GaAs surface morphology degrades and the stacking fault density increases at high Ge buffer-layer substrate temperatures; however, the threading dislocation density remains unchanged. Variations in growth conditions are correlated with defect densities and luminescence efficiencies to determine material quality and optimize growth conditions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335551
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Wettability of polyacetylene: surface energetics and determination of material properties (1986)
    s.l. : American Chemical Society
    Langmuir 2 (1986), S. 508-513 
    Details
    ISSN: 1520-5827
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/la00070a021
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Electrophysiology of the Central Serotonin System: Receptor Subtypes and Transducer Mechanisms (1990)
    Oxford, UK : Blackwell Publishing Ltd
    Annals of the New York Academy of Sciences 600 (1990), S. 0 
    Details
    ISSN: 1749-6632
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Natural Sciences in General
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1749-6632.1990.tb16875.x
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...