ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A new approach to analyze the transport characteristics of resonant tunneling structures has been developed. It is shown that the Fermi-level Ef position per se, the temperature variations of the Fermi-level, the effective mass, and the mobility, have important influences on the resonant tunneling transport properties. Both calculations and experiments have shown very different features for heavy-hole and light-hole resonant tunneling in SiGe/Si resonant tunneling structures. These different features can for the first time be explained coherently. The calculated subband energy at current resonance can be much higher or lower than the Fermi level and the peak current can decrease or increase with temperature, depending on the device structure, the carrier type, and the working conditions. The calculations have predicted an interesting result that, in the low-temperature region, the valley current for the first heavy-hole resonance decreases with temperature, and that is confirmed by our experiments. The calculated temperature dependences of heavy- and light-hole transport, such as peak and valley currents/voltages and their variations with the well width, agree very well with our observations and other published results.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.350932
Permalink
