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  • 1
    ISSN: 1471-4159
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: Abstract: The dopamine (DA) D3 receptor antagonist PD 58491 {3-[4-[1-[4-[2-[4-(3-diethylaminopropoxy)phenyl]-benzoimidazol-1-yl-butyl]-1H-benzoimidazol-2-yl]-phenoxy]propyl]diethylamine} bound with high affinity and selectivity to recombinant human DA D3 versus D2L and D4.2 receptors transfected into Chinese hamster ovary cells: Ki values of 19.5 nM versus 2,362 and 〉3,000 nM, respectively. In contrast, the putative DA D3 receptor antagonist (+)-AJ76 displayed low affinity and selectivity for D3 versus D2L and D4.2 receptors (91 nM vs. 253 and 193 nM, respectively). In vitro, PD 58491 (1 nM−1µM) exhibited D3 receptor antagonist activity, reversing the quinpirole (10 nM)-induced stimulation of [3H]thymidine uptake in D3 CHOpro-5 cells, but did not have any significant intrinsic activity by itself in this assay. PD 58491 did not decrease the γ-butyrolactone-induced increase in DA synthesis (l-3,4-dihydroxyphenylalanine accumulation) in rat striatum, indicating that the compound possessed no in vivo DA D2/D3 receptor agonist action at DA autoreceptors. PD 58491 (3–30 mg/kg, i.p.) generally did not alter DA or serotonin synthesis in either the striatum or mesolimbic region of rat brain. The D3-preferring agonist PD 128907 decreased DA synthesis in striatum and mesolimbic regions, and this effect was attenuated by pretreatment with PD 58491. These findings support the hypothesis that DA D3 autoreceptors may in part modulate the synthesis and release of DA in striatum and mesolimbic regions.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1344-1346 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present the modulation effect of carrier distributions in δ-doped quantum wells (QWs). For identical Si or Be dopant distributions, the carrier distributions are significantly affected by the confinement of QWs having different thicknesses. For both types of carrier we find a QW thickness for maximum confinement, with thicker or thinner wells resulting in less confinement. An extremely narrow capacitance-voltage profile with a full width at half maximum of 5 A(ring) is observed in Be δ-doped AlGaAs/GaAs QWs of width 50 A(ring). The sheet conductivities determined from Hall measurements also exhibit strong dependence on the spatial distribution of carriers. The modulation effects are mainly governed by the subband energy levels and the spatial extent of the carrier wave functions. Photoluminescence spectra reflect the rise of the Fermi energy caused by enhanced confinement of carriers by QWs.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of organic chemistry 42 (1977), S. 2028-2030 
    ISSN: 1520-6904
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of organic chemistry 42 (1977), S. 3321-3323 
    ISSN: 1520-6904
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of organic chemistry 42 (1977), S. 4127-4131 
    ISSN: 1520-6904
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2655-2657 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the results of low-temperature photoluminescence (PL) studies of AlAs/GaAs superlattice quantum wells (SLQWs), obtained by placing various periods of short-period AlAs/GaAs superlattices (SLs) between two Al0.45Ga0.55As confining layers. Structures with a constant well width and various combinations of AlAs and GaAs layer thicknesses in the SLs are synthesized by molecular beam epitaxy. Two distinct peaks are resolved in the PL spectra, which can be attributed to transitions involving heavy-hole and light-hole bands. Comparison of 4 and 77 K PL spectra reveal evidence of type-II band alignment in SLQWs with thin GaAs layers.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1142-1144 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Selective epitaxial growth followed by epitaxial lateral overgrowth (ELO) of silicon through windows in SiO2 in a hot-wall low-pressure chemical vapor deposition system has been used to fabricate silicon-on-insulator (SOI) structures. By careful ex situ and in situ surface cleaning and low-temperature processing, 2.5-μm-thick single-crystal silicon films have been successfully deposited over oxide layers as thin as 35 A(ring). Dislocation densities in these SOI films over thin oxides are higher than those found in SOI films deposited on thicker oxides. Nucleation of dislocations in the epitaxially grown film is attributed to pinhole expansion in the ultrathin oxide layers during ex situ cleaning, prebake treatment, or ELO processing. An unusual crystallographic defect with attributes of a microtwin-stacking fault complex are also observed in the ELO film appearing over thin oxide layers. A model is proposed to explain this class of defect structure and its formation mechanism.
    Type of Medium: Electronic Resource
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  • 8
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report studies of GaAs/AlAs short period superlattices using cross-sectional scanning tunneling microscopy. In particular, we investigate the role of growth interrupt time on the resulting interfacial structure. Superlattices with repeated periods of four layers of GaAs and two layers of AlAs are resolved atom by atom. Superlattices grown using a 30 s growth interrupt time are observed while those grown with a 5 s growth interrupt time are not. We also discuss residual effects of the growth interrupt process on layers grown on top of the short-period superlattice. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1910-1911 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A high reflectivity broadband BaTiO3 self-pumped phase conjugator with external ring cavity in near-infrared wavelengths (706–850 nm) is reported. Phase conjugate reflectivity as high as 77.5% was observed at 756 nm. The losses and the reflection grating are discussed in detail.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2953-2955 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The second-order nonlinear optical coefficients d33, d31, and d15 of GaN:Mg epitaxial film were studied by the standard Maker fringe of an anisotropic medium. The measured d33=−(16.5±1.3) pm/V which is 55 times of the d11 of quartz. The measured ratios of d33/d31 and d31/d15 showed that the crystalline film is close to an ideal wurzite structure. The refractive indices and the dispersive curves of ne, n0 were also determined by TM and TE waveguide mode measurements. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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