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  • 1
    Electronic Resource
    Electronic Resource
    Spectroscopic characterization of the .alpha. .dblharw. .beta. crystalline phase transition in poly(butylene terephthalate) and its copolymers with poly(tetramethylene oxide) (1987)
    s.l. : American Chemical Society
    Macromolecules 20 (1987), S. 1022-1029 
    Details
    ISSN: 1520-5835
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ma00171a025
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Alloy ordering in GaInP alloys: A cross-sectional scanning tunneling microscopy study (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1979-1981 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a cross-sectional scanning tunneling microscopy (XSTM) study of the spontaneous ordering of Ga0.48In0.52P and Ga0.52In0.48P grown on (001) GaAs substrates by molecular beam epitaxy (MBE) and organometallic vapor phase epitaxy (OMVPE), respectively. The (111)-type alloy ordering could be seen clearly in the OMVPE-grown alloy region. On the other hand, the MBE-grown region shows a very small degree of ordering as revealed by the STM. Most of the ordered region shows (InP)1(GaP)1-type ordering: alternating InP- and GaP-like (1¯11) planes. In addition to this type of ordering, we also observe another type of ordering consisting of two InP-like (1¯11) planes and one GaP-like (1¯11) plane that we call (InP)2(GaP)1-type ordering. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122341
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  • 3
    Electronic Resource
    Electronic Resource
    Cross-sectional scanning tunneling microscopy of doped and undoped AlGaAs/GaAs heterostructures (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 493-495 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Scanning tunneling microscopy (STM) was used to study the (NH4)2S-passivated (110) cross-sectional surfaces of both doped and undoped Al0.3Ga0.7As/GaAs heterostructures on n+-substrates. The ex situ (NH4)2S treatment of the cross-sectional surfaces of heterostructures was found to be very stable against oxidation. STM images showed no appreciable deterioration of surface quality in vacuum after more than 40 days. The spectroscopic results on the undoped epilayer showed diodelike behavior, confirming that an undoped large band gap region can be imaged by STM through carrier injection from the conductive regions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111140
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  • 4
    Electronic Resource
    Electronic Resource
    Effect of strain on the band structure of GaAs and In0.2Ga0.8As (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 308-310 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The valence-band structures of 50-A(ring)-thick layers of GaAs(001) in tension and In0.2Ga0.8As(001) in compression have been determined using angle-resolved photoemission spectroscopy. Our studies show that the Δ3+Δ4 bands and the Δ1 band respond differently to the strain perturbation. For strained GaAs(001), the Δ3+Δ4 bands (Px+Py-like) are shifted up in energy by a maximum amount of 0.3 eV, while in contrast, the Δ1 band (Pz-like) is shifted down by about 0.1 eV. For strained In0.2Ga0.8As(001), the band shifts are in the opposite direction, consistent with the opposite strain conditions. For both materials, the strain-induced changes cannot be characterized simply by rigid band shifts, but rather exhibit significant wave vector dependence. This results in a reduction of the effective mass of the Δ3+Δ4 bands for both GaAs and In0.2Ga0.8As.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99502
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  • 5
    Electronic Resource
    Electronic Resource
    Dispersed Phase Distributors in Packed Countercurrent, Liquid-Liquid Extraction Column (1966)
    s.l. : American Chemical Society
    Industrial and engineering chemistry 5 (1966), S. 260-264 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/i260019a011
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  • 6
    Electronic Resource
    Electronic Resource
    New variable low-temperature scanning tunneling microscope for use in ultrahigh vacuum (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 2499-2503 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We describe the design and characterization of a new variable low-temperature scanning tunneling microscope (STM) which has been proven to give atomic resolution at temperatures between 77 K and room temperature but which is also capable of performing experiments as low as 4 K. The STM "head'' itself consists of a unique cold dewar made up of an upper and lower reservoir connected together by two tubes which pass through an 8 in. conflat flange. The STM stage is suspended in between the two reservoirs by three long springs which pass through holes in the upper reservoir and also attach to the top flange. An adjustable cold shroud surrounds the STM stage for radiation shielding while allowing sample and tip transfer when raised. It has the additional advantage of providing a controllable heat leak. By raising the shroud, the temperature can be increased; by lowering it, the temperature can be decreased. The cold reservoirs can be filled with either liquid nitrogen or liquid helium. In the case of liquid helium, an additional liquid nitrogen "jacket'' surrounds the STM head. Everything is operated inside a customized ultrahigh vacuum chamber containing low-energy electron diffraction and various sample preparation facilities. A detailed description of the STM is presented together with performance results. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1145647
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  • 7
    Electronic Resource
    Electronic Resource
    A new high-resolution two-dimensional micropositioning device for scanning probe microscopy applications (1994)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 65 (1994), S. 3216-3219 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We report on the development of a new two-dimensional micropositioning device, or walker, which is capable of moving across very large distances (in principle unlimited) and with a very small step size (as small as 100 A(ring)/step) in both directions. Based on a unique tracking design, the motion is extremely orthogonal with very little crosstalk between the two directions. Additionally, there is no detectable backlash in either direction. The walker performance has been extensively tested by using a position-sensitive proximitor probe. Tests have been done between 77 and 300 K. However, we project that the walker will be able to operate at temperatures as low as 4 K. This walker system has shown extremely reliable performance in a UHV environment for use with scanning tunneling microscopy and has been especially useful for cross-sectional scanning tunneling microscopy and spectroscopy studies of semiconductor hetero- and homostructures. We show one example of results on the (AlGa)As/GaAs heterostructure system.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1144552
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  • 8
    Electronic Resource
    Electronic Resource
    Cross-sectional scanning tunneling microscopy study of GaAs/AlAs short period superlattices: The influence of growth interrupt on the interfacial structure (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 478-480 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report studies of GaAs/AlAs short period superlattices using cross-sectional scanning tunneling microscopy. In particular, we investigate the role of growth interrupt time on the resulting interfacial structure. Superlattices with repeated periods of four layers of GaAs and two layers of AlAs are resolved atom by atom. Superlattices grown using a 30 s growth interrupt time are observed while those grown with a 5 s growth interrupt time are not. We also discuss residual effects of the growth interrupt process on layers grown on top of the short-period superlattice. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114062
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  • 9
    Electronic Resource
    Electronic Resource
    Determination of the natural valence-band offset in the InxGa1−xAs system (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1632-1633 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The natural valence-band offset (NVBO) between semiconductors in a common anion alloy system can be determined through photoemission core level measurements. In this work, we tested this method in the InxGa1−xAs system. The NVBO between GaAs and InAs is measured to be 0.11±0.05 eV. This result is in approximate agreement with the experimental value of 0.17±0.07 eV determined by x-ray photoemission spectroscopy measurements.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98578
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  • 10
    Electronic Resource
    Electronic Resource
    Identification of first and second layer aluminum atoms in dilute AlGaAs using cross-sectional scanning tunneling microscopy (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1214-1216 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cross-sectional scanning tunneling microscopy is used to study dilute AlxGa1−xAs with x=0.05 to investigate the bonding configurations within this ternary alloy. Atomically resolved scanning tunneling microscopy images combined with symmetry considerations provide the assignment of first and second layer aluminum atoms. The Al–Al pair distribution function based on the experimental data is compared with the theoretical pair distribution function of a random alloy. While there exists a qualitative agreement, small deviations from the ideal random distribution are also found. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117415
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