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Island growth, strain, and interdiffusion in InAs1−xPx/InP heterostructures (1995)

Tweet, D. J. ; Matsuhata, H. ; Shioda, R. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 67 (1995), S. 1286-1288

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Using x-ray diffraction and transmission electron microscopy we have found that InAs1−xPx films deposited on InP(001) substrates with organometallic vapor phase epitaxy grow in an unusual island growth mode characterized by large strain-dependent interdiffusion. Initially, strong intermixing occurs, producing pseudomorphic islands of intermediate composition. These grow only until some point in the relaxation process, possibly a critical value of the strain, after which islands of the intended composition begin to appear. Furthermore, both types of islands are found to penetrate deeply into the substrate. © 1995 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.114399

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Surface-Sensitive XAFS in the Hard X-ray Region with Sub-Monolayer Sensitivity (1995)

Oyanagi, H. ; Shioda, R. ; Kuwahara, Y. ; [et al.]

Chester : International Union of Crystallography (IUCr)

Journal of synchrotron radiation 2 (1995), S. 99-105

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ISSN: 1600-5775

Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001

Topics: Geosciences , Physics

Notes: Surface-sensitive X-ray absorption fine structure (XAFS) with sub-monolayer sensitivity based on grazing-incidence fluorescence detection is reported. The efficiency of fluorescence detection increased by more than two orders of magnitude by combining a multipole wiggler with a multi-element Si(Li) solid-state detector. The capability of the present technique for structural studies of surfaces and buried interfaces in the hard X-ray region was demonstrated by As K-edge XAFS studies of the InP(001) surface exposed to AsH3 flow. The results indicated that 0̃.1 monolayer As atoms are incorporated into the surface replacing the P atoms.