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  • 1
    Electronic Resource
    Electronic Resource
    Superhard nanocrystalline composite materials: The TiN/Si3N4 system (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2640-2642 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of novel superhard composite materials consisting of TiN nanocrystals in an amorphous Si3N4 matrix have been prepared by means of plasma chemical vapor deposition. The films show a high Vickers hardness of 5000 kg/mm2 and elastic modulus of (approximately-greater-than)500 GPa, and they are resistant against oxidation in air up to ≥800 °C. The theoretical background of these unusual properties are briefly discussed and practical rules suggested according to which similar properties should be expected for composites of other ternary systems. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113110
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  • 2
    Electronic Resource
    Electronic Resource
    Ti-Si-N films prepared by plasma-enhanced chemical vapor deposition (1992)
    Springer
    Plasma chemistry and plasma processing 12 (1992), S. 287-297 
    Details
    ISSN: 1572-8986
    Keywords: Titanium nitride ; titanium-silicium nitride ; plasma CVD ; hard coatings
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract Ti-Si-N thin films were deposited on HSS substrates at 560°C using plasmaenhanced chemical vapor deposition. Feed gases used were TiCl4, SiCl4, N2, and H2. The composition of the films could be controlled well through adjustment of the mixing ratio of the chlorides in the feed gases. The Si content in the film varied in the range of O to 40 at. %. It was jbund that a small addition of Si to a TiN film improved the morphology significantlv, showing dense and glasslike structure. Also a much smootherand more homogeneous interface between thefilm and the substrate was obtained. The Ti-Si- N films containing 10–15 at. % Si showed the maximal microhardness value of about 6350 kgf/mm2, much higher than that of TiN films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01447027
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  • 3
    Electronic Resource
    Electronic Resource
    Plasma-induced deposition of titanium nitride from TiCl4 in a direct current glow discharge: Control of the chlorine content and gas-phase nucleation (1996)
    Springer
    Plasma chemistry and plasma processing 16 (1996), S. 341-363 
    Details
    ISSN: 1572-8986
    Keywords: Titanium nitride ; glow discharge plasma CVD ; TiCl4 wear protective coatings ; diffusion barriers
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Technology
    Notes: Abstract Titanium nitride thin films have been deposited from TiCl4, N2, and H2, in a low-pressure glow discharge at temperatures of ≤500°C, which are compatible with most applications. Based on our earlier work on the effect of tire plasma parameters on the chemical pseudoequilibrium in this and in similar systems, the chlorine content could he reduced to less than 2 at %. Suppression of the positive column reduced the gas-phase reaction within the reactor volume and the concomitant homogenous nucleation Dense, vent hard films with golden color could he deposited on various substrates including silicon and steel.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01447150
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    Paper (German National Licenses)
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