Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Hydrogen catalyzed crystallization of strontium titanate (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 2711-2718 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The crystallization rate of amorphous strontium titanate is enhanced by more than an order of magnitude during thermal annealing in water vapor as compared to a dry ambient. Time resolved optical reflectivity (TRR) has been combined with Rutherford backscattering spectrometry (RBS) and ion channelling to investigate this effect. Thin amorphous films (0.6 μm) were produced on single-crystal substrates of (100) strontium titanate by bombardment with 1.9 or 2.0 MeV Pb ions. Specimens were annealed under controlled ambient conditions (H2O, D2O, vacuum, 265–430 °C) and the solid phase epitaxial crystallization monitored in situ by TRR (633 nm). The TRR data were calibrated ex situ by transmission electron microscopy and RBS measurements. Isotope substitution, nuclear reaction analysis, and secondary-ion-mass spectrometry were utilized to reveal the uptake of hydrogen and oxygen into the implanted layer. Hydrogen is identified as the only species which penetrates to the crystal/amorphous interface. It is shown that the crystallization rate is proportional to the concentration of diffusing hydrogen (H or D) at the interface. The data show that the effect of water vapor, or more precisely, hydrogen, is to reduce the activation energy of crystallization from 2.1 to 1.0 eV. It is concluded that hydrogen, provided by the dissociation of water molecules at the surface, is a catalyst in the crystallization of amorphous strontium titanate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357574
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Suppression of dislocation formation in silicon by carbon implantation (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2857-2859 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have examined the role of carbon co-implantation in the formation of secondary defects in self-ion-irradiated Si(100). Implantation of Si ions (540 keV energy, 1015 ions/cm2 at 1.3×1011 ions/cm2/s, Ti=90 °C) followed by a 900 °C, 15 min anneal leads to the growth of an extended defect band at the end of range. Range matched-carbon co-implantation (300 keV energy, 1015 ions/cm2 plus 500 keV energy 1015 ions/cm2 of 1.5×1011 ions/cm2/s, Ti=90 °C) can be used to modify this defect development dramatically. While direct co-implantation of carbon and silicon ions to similar concentrations has no apparent effect on the formation of extended defects, such formation is suppressed when the implanted C is incorporated substitutionally into the silicon lattice. These results are discussed in the context of recent reports on C suppression of the transient enhanced diffusion of boron. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114808
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Phase and amplitude characteristics of nearly degenerate four-wave mixing in Fabry–Perot semiconductor lasers (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2587-2589 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The phase and amplitude characteristics of nearly degenerate four-wave mixing in a semiconductor laser are studied. The experimental data can be quantitatively understood with a theoretical analysis in terms of the phase and amplitude modulations caused by mixing between the optical fields in the injected laser.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353073
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    THE DETERMINATION OF NITROUS ACID AND NITRITES. (1919)
    s.l. : American Chemical Society
    Journal of the American Chemical Society 41 (1919), S. 524-531 
    Details
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ja01461a004
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Instabilities and chaos in optically injected semiconductor lasers (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2780-2782 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have experimentally obtained and theoretically analyzed a systematic map of the various instabilities induced in a semiconductor laser subject to strong optical injection as the amount of optical injection power and frequency detuning is varied. Two distinct islands of chaos have been identified in the injection-locked region. They are separated by regions of period one and period two solutions. Spontaneous emission noise obscures the observation of high periodic orbits. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114591
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Infrared multiphoton excitation of polyatomic molecules (1985)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 83 (1985), S. 628-640 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We present a systematic study of the infrared multiphoton excitation and dissociation of several polyatomic molecules. The molecules range in size from SO2, with three vibrational modes, to C3F7I, with 27. A gradual transition occurs from intensity dependent excitation, characteristic of a sparse density of vibrational states in small molecules, to a fluence dominated absorption characteristic of a quasicontinuum of vibrational states in large, heavy molecules. Molecules with ten or more atoms showed no intensity dependence under pulsed CO2 laser excitation at a fixed energy fluence. For a molecule to have a high probability of dissociation under realizable conditions of laser intensity and fluence, quasicontinuum region excitation must dominate. All molecules appeared to have statistically coupled vibrational modes at high levels of vibrational energy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.449531
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Crystal structure of the chlorine complex of bis(p-chlorophenyl) sulfide (1969)
    s.l. : American Chemical Society
    Journal of the American Chemical Society 91 (1969), S. 5749-5755 
    Details
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ja01049a009
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Effects of phosphorus doping on boron transient enhanced diffusion in silicon (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 1146-1148 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of phosphorus predoping on transient enhanced diffusion (TED) of boron, ion implanted into silicon, were studied using secondary ion mass spectroscopy (SIMS). Boron ions of 40 keV energy were implanted to a dose of 3×1014 cm−2 into Si(100), which had been uniformly predoped with P at atomic concentrations varying between ∼3×1019 and ∼1×1020 cm−3. The effective boron diffusivity in the TED distribution and the amount of immobile boron are extracted from SIMS profiles. Our results show that both decrease with increasing P doping level, saturating beyond a P-doping level of ∼6×1019 cm−3 after the low temperature anneal. The implications of these results for different models of modified TED behavior of boron are discussed. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118509
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Period-doubling route to chaos in a semiconductor laser subject to optical injection (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 3539-3541 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Experimental measurements and a single-mode analysis of a quantum-well laser diode subject to strong optical injection are combined to demonstrate that the diode follows a period-doubling route to chaos. All laser parameters used in this model, including the influence of spontaneous emission noise, were experimentally determined based on the four-wave mixing technique. The transition to chaos can be used to reduce the uncertainty in the value of the linewidth enhancement factor.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111218
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    The impact of percutaneous tracheostomy on intensive care unit practice and training (1999)
    Oxford : Blackwell Science Ltd
    Anaesthesia 54 (1999), S. 0 
    Details
    ISSN: 1365-2044
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: We studied the impact of introducing percutaneous tracheostomy to our intensive care unit on the incidence and timing of tracheostomy and on the implications for surgical training. The proportion of patients receiving intensive care who underwent tracheostomy doubled from a median of 8.5% to 16.8% (p 〈 0.01) following the introduction of the percutaneous technique with the procedure being undertaken significantly earlier during the intensive care stay. The opportunity for surgical trainees to gain experience in open surgical tracheostomy has been virtually lost. The increase in tracheostomy rate may reflect a previous under-utilisation caused by the logistic problems of transferring a critically ill patient to theatre, or alternatively a relaxation of the indications for tracheostomy caused by a perceived benefit for the patient. An increased workload may also have contributed to the rise. Surgical trainees should be encouraged to learn percutaneous techniques and training opportunities in open surgical techniques should be maximised.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1365-2044.1999.00667.x
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...